Infineon Technologies BSC026N02KS G

Name: BSC026N02KS G
Brand: Infineon Technologies
SKU: 2478864-BSC026N02KS G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSC026N02KS G

Manufacturer:: Infineon Technologies

Ventron No:: 2478864-BSC026N02KS G

Description:: MOSFET N-CH 20V 100A TDSON-8

ECAD Model:

Datasheet:: BSC026N02KS G

Specifications

Infineon Technologies BSC026N02KS G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSC026N02KS G.

Vgs(th) (Max) @ Id:
1.2V @ 200µA
Vgs (Max):
±12V
Technology:
MOSFET (Metal Oxide)
Supplier Device Package:
PG-TDSON-8
Series:
OptiMOS™
Rds On (Max) @ Id, Vgs:
2.6 mOhm @ 50A, 4.5V
Power Dissipation (Max):
2.8W (Ta), 78W (Tc)
Packaging:
Tape & Reel (TR)
Package / Case:
8-PowerTDFN
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:
7800pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
52.7nC @ 4.5V
FET Type:
N-Channel
FET Feature:
-
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
25A (Ta), 100A (Tc)

Description

Images are for reference only.See Product Specifications for product details.If you are interested to buy International Rectifier (Infineon Technologies) BSC026N02KS G.

Product Comparison

The three parts on the right have similar specifications to BSC026N02KS G.

Image

Part Number

Manufacturer

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Voltage - Rated DC

Max Power Dissipation

Technology

Current Rating

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Input Capacitance

Rds On Max

RoHS Status

Lead Free

Transistor Element Material

Published

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Power Dissipation

Case Connection

Transistor Application

Fall Time (Typ)

Turn-Off Delay Time

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Surface Mount

Reach Compliance Code

DS Breakdown Voltage-Min

View Compare
BSC026N02KS G

Infineon Technologies

1.2V @ 200µA

±12V

MOSFET (Metal Oxide)

PG-TDSON-8

OptiMOS™

2.6 mOhm @ 50A, 4.5V

2.8W (Ta), 78W (Tc)

Tape & Reel (TR)

8-PowerTDFN

-55°C ~ 150°C (TJ)

Surface Mount

7800pF @ 10V

52.7nC @ 4.5V

N-Channel

-

2.5V, 4.5V

20V

25A (Ta), 100A (Tc)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

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-

-

-

-

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-

-

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-

-

-

-

-

-

-

-

-
BSC042N03ST

Infineon Technologies

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Surface Mount

Surface Mount

8-PowerTDFN

8

PG-TDSON-8-5

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

Discontinued

1 (Unlimited)

30V

62.5W

MOSFET (Metal Oxide)

50A

N-Channel

4.2mOhm @ 50A, 10V

2V @ 50μA

3660pF @ 15V

20A Ta 50A Tc

28nC @ 5V

5.8ns

30V

4.5V 10V

±20V

50A

3.66nF

4.2 mΩ

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

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-

-

BSC026N02KS G vs BSC042N03ST
BSC032N03SG

Infineon Technologies

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Surface Mount

Surface Mount

8-PowerTDFN

8

-

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

Obsolete

1 (Unlimited)

30V

-

MOSFET (Metal Oxide)

50A

N-Channel

3.2m Ω @ 50A, 10V

2V @ 70μA

5080pF @ 15V

23A Ta 100A Tc

39nC @ 5V

7ns

-

4.5V 10V

±20V

100A

-

-

RoHS Compliant

Lead Free

SILICON

2004

e3

5

EAR99

MATTE TIN

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET General Purpose Power

DUAL

FLAT

260

40

8

R-PDSO-F5

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

2.8W Ta 78W Tc

ENHANCEMENT MODE

2.8W

DRAIN

SWITCHING

5.4 ns

32 ns

20V

23A

0.0049Ohm

30V

200A

550 mJ

-

-

-

BSC026N02KS G vs BSC032N03SG
BSC048N025S G

Infineon Technologies

-

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-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Surface Mount

8-PowerTDFN

-

-

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

N-Channel

4.8m Ω @ 50A, 10V

2V @ 35μA

2670pF @ 15V

19A Ta 89A Tc

21nC @ 5V

-

25V

4.5V 10V

±20V

-

-

-

RoHS Compliant

-

SILICON

2008

e3

5

EAR99

MATTE TIN

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET General Purpose Power

DUAL

FLAT

NOT SPECIFIED

NOT SPECIFIED

8

R-PDSO-F5

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

2.8W Ta 63W Tc

ENHANCEMENT MODE

-

DRAIN

SWITCHING

-

-

-

19A

0.0048Ohm

-

200A

185 mJ

YES

compliant

25V

BSC026N02KS G vs BSC048N025S G