Infineon Technologies BSC016N04LS G

Name: BSC016N04LS G
Brand: Infineon Technologies
SKU: 2478732-BSC016N04LS G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSC016N04LS G

Manufacturer:: Infineon Technologies

Ventron No:: 2478732-BSC016N04LS G

Description:: MOSFET N-CH 40V 100A TDSON-8

ECAD Model:

Datasheet:: BSC016N04LS G

Specifications

Infineon Technologies BSC016N04LS G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSC016N04LS G.

Surface Mount
YES
Number of Terminals
5
Transistor Element Material
SILICON
JESD-609 Code
e3
Pbfree Code
icon-pbfree no
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
8
JESD-30 Code
R-PDSO-F5
Qualification Status
Not Qualified
Operating Temperature (Max)
150°C
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Transistor Application
SWITCHING
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (Abs) (ID)
100A
Drain-source On Resistance-Max
0.0023Ohm
Pulsed Drain Current-Max (IDM)
400A
DS Breakdown Voltage-Min
40V
Avalanche Energy Rating (Eas)
295 mJ
FET Technology
METAL-OXIDE SEMICONDUCTOR
RoHS Status
RoHS Compliant

Description

BSC016N04LS G Description
BSC016N04LS G is a 40v OptiMOS?3 Power-Transistor. CoolMOS? C6 combines Infineon's experience as the leading super junction MOSFET supplier with best-in-class innovation. The C6 BSC016N04LS G provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter, and cooler.

BSC016N04LS G Features
Easy control of switching behavior
Extremely low losses due to very low Figure of Merit (RDS(on)* Qg and Eoss)
Very high commutation ruggedness
Easy to use
Better light load efficiency compared to C3
Outstanding reliability with proven CoolMOS? quality combined with high body diode ruggedness
Better price performance in comparison to previous CoolMOS? generations
More efficient, more compact, lighter and cooler

BSC016N04LS G Applications
Consumer
Adapter
eMobility
PFC stages for server & telecom
SMPS
PC power
Solar
Lighting

Product Comparison

The three parts on the right have similar specifications to BSC016N04LS G.

Image

Part Number

Manufacturer

Surface Mount

Number of Terminals

Transistor Element Material

JESD-609 Code

Pbfree Code

Moisture Sensitivity Level (MSL)

ECCN Code

Terminal Finish

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Number of Elements

Configuration

Operating Mode

Case Connection

Transistor Application

Polarity/Channel Type

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

FET Technology

RoHS Status

Mounting Type

Package / Case

Operating Temperature

Packaging

Series

Published

Part Status

Number of Terminations

Additional Feature

HTS Code

Subcategory

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Mount

Number of Pins

Voltage - Rated DC

Current Rating

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Lead Free

Supplier Device Package

Max Power Dissipation

Input Capacitance

Rds On Max

View Compare
BSC016N04LS G

Infineon Technologies

YES

5

SILICON

e3

icon-pbfree no

1 (Unlimited)

EAR99

Tin (Sn)

DUAL

FLAT

NOT SPECIFIED

not_compliant

NOT SPECIFIED

8

R-PDSO-F5

Not Qualified

150°C

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

N-CHANNEL

100A

0.0023Ohm

400A

40V

295 mJ

METAL-OXIDE SEMICONDUCTOR

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BSC094N03S G

Infineon Technologies

YES

-

SILICON

e3

-

1 (Unlimited)

EAR99

MATTE TIN

DUAL

FLAT

260

compliant

40

8

R-PDSO-F5

Not Qualified

-

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

-

14.6A

0.0094Ohm

140A

30V

90 mJ

-

RoHS Compliant

Surface Mount

8-PowerTDFN

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

2011

Obsolete

5

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

8541.29.00.95

FET General Purpose Power

MOSFET (Metal Oxide)

2.8W Ta 52W Tc

N-Channel

9.4m Ω @ 35A, 10V

2V @ 25μA

1800pF @ 15V

14.6A Ta 35A Tc

14nC @ 5V

30V

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BSC016N04LS G vs BSC094N03S G
BSC022N03S

Infineon Technologies

-

-

SILICON

e0

-

1 (Unlimited)

EAR99

Tin/Lead (Sn/Pb)

DUAL

NO LEAD

235

-

NOT SPECIFIED

8

R-PDSO-N5

Not Qualified

-

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

-

SWITCHING

-

-

0.0033Ohm

200A

-

-

-

Non-RoHS Compliant

Surface Mount

8-PowerTDFN

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

2004

Discontinued

5

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

-

FET General Purpose Power

MOSFET (Metal Oxide)

2.8W Ta 104W Tc

N-Channel

2.2m Ω @ 50A, 10V

2V @ 100μA

7490pF @ 15V

28A Ta 100A Tc

58nC @ 5V

-

4.5V 10V

±20V

Surface Mount

8

30V

50A

9.7 ns

9ns

7 ns

42 ns

50A

20V

Contains Lead

-

-

-

-

BSC016N04LS G vs BSC022N03S
BSC059N03ST

Infineon Technologies

-

-

-

-

-

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

Surface Mount

8-PowerTDFN

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

-

Discontinued

-

-

-

-

MOSFET (Metal Oxide)

-

N-Channel

5.5mOhm @ 50A, 10V

2V @ 35μA

2670pF @ 15V

19A Ta 89A Tc

21nC @ 5V

30V

4.5V 10V

±20V

Surface Mount

8

30V

50A

-

4.8ns

-

-

50A

-

Contains Lead

PG-TDSON-8-1

48W

2.67nF

5.5 mΩ

BSC016N04LS G vs BSC059N03ST