Fairchild/ON Semiconductor BD682STU
- Part Number:
- BD682STU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2845639-BD682STU
- Description:
- TRANS PNP DARL 100V 4A TO-126
- Datasheet:
- BD682STU
Fairchild/ON Semiconductor BD682STU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BD682STU.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time2 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-225AA, TO-126-3
- Number of Pins3
- Weight761mg
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- Published2002
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-100V
- Max Power Dissipation14W
- Current Rating-4A
- Base Part NumberBD682
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation14W
- Transistor ApplicationSWITCHING
- Transistor TypePNP - Darlington
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current4A
- DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 1.5A 3V
- Current - Collector Cutoff (Max)500μA
- Vce Saturation (Max) @ Ib, Ic2.5V @ 30mA, 1.5A
- Collector Emitter Breakdown Voltage100V
- Collector Emitter Saturation Voltage2.5V
- Max Breakdown Voltage100V
- Collector Base Voltage (VCBO)-100V
- Emitter Base Voltage (VEBO)-5V
- hFE Min750
- Continuous Collector Current-4A
- Height11mm
- Length8mm
- Width3.25mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BD682STU Overview
This device has a DC current gain of 750 @ 1.5A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.A VCE saturation (Max) of 2.5V @ 30mA, 1.5A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -4A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A breakdown input voltage of 100V volts can be used.A maximum collector current of 4A volts is possible.
BD682STU Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
BD682STU Applications
There are a lot of ON Semiconductor
BD682STU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 750 @ 1.5A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.A VCE saturation (Max) of 2.5V @ 30mA, 1.5A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -4A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A breakdown input voltage of 100V volts can be used.A maximum collector current of 4A volts is possible.
BD682STU Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
BD682STU Applications
There are a lot of ON Semiconductor
BD682STU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BD682STU More Descriptions
4.0 A, 100 V PNP Darlington Bipolar Power Transistor
Bipolar Transistor, Pnp, 100V, 4A, To225 Rohs Compliant: Yes |Onsemi BD682STU
Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Trans Darlington PNP 100V 4A 14000mW 3-Pin(3 Tab) TO-126 Rail
BIPOLAR Transistor, PNP, 100V, 4A, TO225;
PNP Epitaxial Silicon Transistor Product Highlights: Medium Power Darlington TR Complement to BD675A, BD677A, BD679A and BD681 respectively
Bipolar Transistor, Pnp, 100V, 4A, To225 Rohs Compliant: Yes |Onsemi BD682STU
Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Trans Darlington PNP 100V 4A 14000mW 3-Pin(3 Tab) TO-126 Rail
BIPOLAR Transistor, PNP, 100V, 4A, TO225;
PNP Epitaxial Silicon Transistor Product Highlights: Medium Power Darlington TR Complement to BD675A, BD677A, BD679A and BD681 respectively
The three parts on the right have similar specifications to BD682STU.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthRadiation HardeningRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Supplier Device PackageMax Operating TemperatureMin Operating TemperaturePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyView Compare
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BD682STUACTIVE (Last Updated: 2 days ago)2 WeeksTinThrough HoleThrough HoleTO-225AA, TO-126-33761mgSILICON150°C TJTube2002e3yesActive1 (Unlimited)3EAR99Other Transistors-100V14W-4ABD6821PNPSingle14WSWITCHINGPNP - Darlington100V4A750 @ 1.5A 3V500μA2.5V @ 30mA, 1.5A100V2.5V100V-100V-5V750-4A11mm8mm3.25mmNoROHS3 CompliantLead Free----------------------
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LAST SHIPMENTS (Last Updated: 2 days ago)20 WeeksTinThrough HoleThrough HoleTO-225AA, TO-126-33761mgSILICON150°C TJTube2002e3yesObsolete1 (Unlimited)3EAR99Other Transistors-80V14W-4ABD6801PNPSingle14WSWITCHINGPNP - Darlington80V4A750 @ 2A 3V500μA2.8V @ 40mA, 2A80V2.8V--80V-5V750-4A11mm8mm3.25mmNoROHS3 CompliantLead Free---------------------
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-----------------------------------------------100V2.5V @ 30mA, 1.5ANPN - DarlingtonSOT-32-3-40WTubeTO-225AA, TO-126-3150°C (TJ)Through Hole-750 @ 1.5A, 3V500µA4A-------
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LAST SHIPMENTS (Last Updated: 1 week ago)--Through HoleThrough HoleTO-225AA, TO-126-33---55°C~150°C TJBulk2008--Obsolete1 (Unlimited)----40W-BD682-PNPSingle40W-PNP - Darlington2.5V4A750 @ 1.5A 3V500μA2.5V @ 30mA, 1.5A100V-80V100V5V7504A----Non-RoHS CompliantContains Lead--------------TO-225AA150°C-55°C40W100V4A25MHz
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