STMicroelectronics BD682

Name: BD682
Brand: STMicroelectronics
SKU: 2845293-BD682
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BD682

Manufacturer:: STMicroelectronics

Ventron No:: 2845293-BD682

Description:: TRANS PNP DARL 100V 4A SOT-32

ECAD Model:

Datasheet:: BD682

Specifications

STMicroelectronics BD682 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BD682.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Supplier Device Package
TO-225AA
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2008
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
40W
Base Part Number
BD682
Polarity
PNP
Element Configuration
Single
Power Dissipation
40W
Power - Max
40W
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
2.5V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 1.5A 3V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 30mA, 1.5A
Collector Emitter Breakdown Voltage
100V
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
4A
Transition Frequency
25MHz
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
750
Continuous Collector Current
4A
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead

Description

BD682 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 1.5A 3V.When VCE saturation is 2.5V @ 30mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 4A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 25MHz.This device can take an input voltage of 80V volts before it breaks down.Supplier package TO-225AA contains the product.The device has a 100V maximal voltage - Collector Emitter Breakdown.A maximum collector current of 4A volts can be achieved.

BD682 Features
the DC current gain for this device is 750 @ 1.5A 3V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
a transition frequency of 25MHz
the supplier device package of TO-225AA

BD682 Applications
There are a lot of ON Semiconductor
BD682 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BD682 More Descriptions

Transistor: PNP; bipolar; -100V; -4A; 14W; -65 150 deg.C; THT; TO126
Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
BD6xxx Series PNP 80 V 4 A Complementary Power Darlington Transistor - SOT-32
TRANSISTOR, DARLINGTON PNP 4A 100V, TO225AA PKG
Transistor Darlington PNP -4A/-100V 40W TO126 BD 682
Transistor PNP Darlington BD682 SGS Ampere=4 TO126
Transistor, Pnp, -100V, -4A, Sot32; Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:-100V; Transition Frequency Ft:-; Power Dissipation Pd:40W; Dc Collector Current:-4A; Dc Current Gain Hfe:750Hfe; Transistor Case Rohs Compliant: Yes |Stmicroelectronics BD682

Product Comparison

The three parts on the right have similar specifications to BD682.

Image

Part Number

Manufacturer

Lifecycle Status

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Max Power Dissipation

Base Part Number

Polarity

Element Configuration

Power Dissipation

Power - Max

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Transition Frequency

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Continuous Collector Current

RoHS Status

Lead Free

Factory Lead Time

Surface Mount

Weight

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Transistor Application

Halogen Free

Collector Emitter Saturation Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

Contact Plating

View Compare
BD682

STMicroelectronics

LAST SHIPMENTS (Last Updated: 1 week ago)

Through Hole

Through Hole

TO-225AA, TO-126-3

3

TO-225AA

-55°C~150°C TJ

Bulk

2008

Obsolete

1 (Unlimited)

150°C

-55°C

40W

BD682

PNP

Single

40W

40W

PNP - Darlington

2.5V

4A

750 @ 1.5A 3V

500μA

2.5V @ 30mA, 1.5A

100V

100V

4A

25MHz

80V

100V

5V

750

4A

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BD680G

ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

-

Through Hole

TO-225AA, TO-126-3

3

-

-55°C~150°C TJ

Bulk

2008

Active

1 (Unlimited)

-

-

40W

BD680

PNP

Single

-

40W

PNP - Darlington

80V

4A

750 @ 1.5A 3V

500μA

2.5V @ 30mA, 1.5A

80V

-

-

200MHz

-

80V

5V

750

-

ROHS3 Compliant

Lead Free

2 Weeks

NO

17.491656mg

SILICON

e3

yes

3

EAR99

Tin (Sn)

Other Transistors

-80V

260

-4A

40

3

1

AMPLIFIER

Halogen Free

2.5V

11.04mm

7.74mm

2.66mm

No SVHC

No

-

BD682 vs BD680G
BD682G

ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

-

Through Hole

TO-225AA, TO-126-3

3

-

-55°C~150°C TJ

Bulk

1995

Active

1 (Unlimited)

-

-

40W

BD682

PNP

Single

40W

-

PNP - Darlington

100V

4A

750 @ 1.5A 3V

500μA

2.5V @ 30mA, 1.5A

100V

-

-

-

-

100V

5V

750

4A

ROHS3 Compliant

Lead Free

10 Weeks

NO

4.535924g

SILICON

e3

yes

3

EAR99

-

Other Transistors

-100V

260

4A

40

3

1

AMPLIFIER

Halogen Free

2.5V

6.35mm

6.35mm

6.35mm

No SVHC

No

Tin

BD682 vs BD682G
BD681G

ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

-

Through Hole

TO-225AA, TO-126-3

3

-

-55°C~150°C TJ

Bulk

1995

Active

1 (Unlimited)

-

-

40W

BD681

NPN

Single

40W

-

NPN - Darlington

100V

4A

750 @ 1.5A 3V

500μA

2.5V @ 30mA, 1.5A

100V

-

-

-

-

100V

5V

750

-

ROHS3 Compliant

Lead Free

7 Weeks

NO

4.535924g

SILICON

e3

yes

3

EAR99

-

Other Transistors

100V

260

4A

40

3

1

AMPLIFIER

Halogen Free

2.5V

11.04mm

7.74mm

2.66mm

No SVHC

No

Tin

BD682 vs BD681G