ON Semiconductor BD682

Name: BD682
Brand: ON Semiconductor
SKU: 3069138-BD682
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BD682

Manufacturer:: ON Semiconductor

Ventron No:: 3069138-BD682

Description:: TRANS PNP DARL 100V 4A TO225AA

ECAD Model:

Datasheet:: BD682

Specifications

ON Semiconductor BD682 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BD682.

Voltage - Collector Emitter Breakdown (Max):
100V
Vce Saturation (Max) @ Ib, Ic:
2.5V @ 30mA, 1.5A
Transistor Type:
PNP - Darlington
Supplier Device Package:
TO-225AA
Series:
-
Power - Max:
40W
Packaging:
Bulk
Package / Case:
TO-225AA, TO-126-3
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Frequency - Transition:
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 1.5A, 3V
Current - Collector Cutoff (Max):
500µA
Current - Collector (Ic) (Max):
4A

Description

Images are for reference only.See Product Specifications for product details.If you are interested to buy AMI Semiconductor / ON Semiconductor BD682.

BD682 More Descriptions

Transistor: PNP; bipolar; -100V; -4A; 14W; -65 150 deg.C; THT; TO126
Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
BD6xxx Series PNP 80 V 4 A Complementary Power Darlington Transistor - SOT-32
TRANSISTOR, DARLINGTON PNP 4A 100V, TO225AA PKG
Transistor Darlington PNP -4A/-100V 40W TO126 BD 682
Transistor PNP Darlington BD682 SGS Ampere=4 TO126
Transistor, Pnp, -100V, -4A, Sot32; Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:-100V; Transition Frequency Ft:-; Power Dissipation Pd:40W; Dc Collector Current:-4A; Dc Current Gain Hfe:750Hfe; Transistor Case Rohs Compliant: Yes |Stmicroelectronics BD682

Product Comparison

The three parts on the right have similar specifications to BD682.

Image

Part Number

Manufacturer

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Polarity

Element Configuration

Power Dissipation

Transistor Application

Halogen Free

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Continuous Collector Current

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

View Compare
BD682

ON Semiconductor

100V

2.5V @ 30mA, 1.5A

PNP - Darlington

TO-225AA

-

40W

Bulk

TO-225AA, TO-126-3

-55°C ~ 150°C (TJ)

Through Hole

-

750 @ 1.5A, 3V

500µA

4A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BD681

STMicroelectronics

100V

2.5V @ 30mA, 1.5A

NPN - Darlington

SOT-32-3

-

40W

Tube

TO-225AA, TO-126-3

150°C (TJ)

Through Hole

-

750 @ 1.5A, 3V

500µA

4A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BD682 vs BD681
BD682G

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ACTIVE (Last Updated: 1 day ago)

10 Weeks

Tin

Through Hole

TO-225AA, TO-126-3

NO

3

4.535924g

SILICON

-55°C~150°C TJ

Bulk

1995

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

-100V

40W

260

4A

40

BD682

3

1

PNP

Single

40W

AMPLIFIER

Halogen Free

PNP - Darlington

100V

4A

750 @ 1.5A 3V

500μA

2.5V @ 30mA, 1.5A

100V

2.5V

100V

5V

750

4A

6.35mm

6.35mm

6.35mm

No SVHC

No

ROHS3 Compliant

Lead Free

BD682 vs BD682G
BD681G

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ACTIVE (Last Updated: 1 day ago)

7 Weeks

Tin

Through Hole

TO-225AA, TO-126-3

NO

3

4.535924g

SILICON

-55°C~150°C TJ

Bulk

1995

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

100V

40W

260

4A

40

BD681

3

1

NPN

Single

40W

AMPLIFIER

Halogen Free

NPN - Darlington

100V

4A

750 @ 1.5A 3V

500μA

2.5V @ 30mA, 1.5A

100V

2.5V

100V

5V

750

-

11.04mm

7.74mm

2.66mm

No SVHC

No

ROHS3 Compliant

Lead Free

BD682 vs BD681G