ON Semiconductor BD681G

Name: BD681G
Brand: ON Semiconductor
SKU: 2845224-BD681G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BD681G

Manufacturer:: ON Semiconductor

Ventron No:: 2845224-BD681G

Description:: TRANS NPN DARL 100V 4A TO225AA

ECAD Model:

Datasheet:: BD681G

Specifications

ON Semiconductor BD681G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BD681G.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
7 Weeks
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
1995
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
100V
Max Power Dissipation
40W
Peak Reflow Temperature (Cel)
260
Current Rating
4A
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BD681
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
40W
Transistor Application
AMPLIFIER
Halogen Free
Halogen Free
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 1.5A 3V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 30mA, 1.5A
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
2.5V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
750
Height
11.04mm
Length
7.74mm
Width
2.66mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BD681G Overview
This device has a DC current gain of 750 @ 1.5A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.A VCE saturation (Max) of 2.5V @ 30mA, 1.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 4A volts is possible.

BD681G Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 4A

BD681G Applications
There are a lot of ON Semiconductor
BD681G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BD681G More Descriptions

Bipolar (Bjt) Single Transistor, Darlington, Npn, 100 V, 40 W, 4 A, 750 Rohs Compliant: Yes
ON Semi BD681G NPN Darlington Transistor; 4 A 100 V HFE:750; 3-Pin TO-225
Medium Power NPN Darlington Bipolar Power Transistor
BD Series 100 V 4 A Medium Power Silicon NPN Darlington Transistor - TO-225AA
Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
Trans Darlington NPN 100V 4A 40000mW 3-Pin(3 Tab) TO-225 Box / TRANS NPN DARL 100V 4A TO225AA
DARLINGTON TRANSISTOR, TO-225AA; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 40W; DC Collector Current: 4A; DC Current Gain hFE: 750hFE; Transistor Case

Product Comparison

The three parts on the right have similar specifications to BD681G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Polarity

Element Configuration

Power Dissipation

Transistor Application

Halogen Free

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Mount

Continuous Collector Current

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Transition Frequency

Max Breakdown Voltage

View Compare
BD681G

ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

7 Weeks

Tin

Through Hole

TO-225AA, TO-126-3

NO

3

4.535924g

SILICON

-55°C~150°C TJ

Bulk

1995

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

100V

40W

260

4A

40

BD681

3

1

NPN

Single

40W

AMPLIFIER

Halogen Free

NPN - Darlington

100V

4A

750 @ 1.5A 3V

500μA

2.5V @ 30mA, 1.5A

100V

2.5V

100V

5V

750

11.04mm

7.74mm

2.66mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
BD680ASTU

Fairchild/ON Semiconductor

LAST SHIPMENTS (Last Updated: 2 days ago)

20 Weeks

Tin

Through Hole

TO-225AA, TO-126-3

-

3

761mg

SILICON

150°C TJ

Tube

2002

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

Other Transistors

-80V

14W

-

-4A

-

BD680

-

1

PNP

Single

14W

SWITCHING

-

PNP - Darlington

80V

4A

750 @ 2A 3V

500μA

2.8V @ 40mA, 2A

80V

2.8V

-80V

-5V

750

11mm

8mm

3.25mm

-

No

ROHS3 Compliant

Lead Free

Through Hole

-4A

-

-

-

-

-

-

-

-

BD681G vs BD680ASTU
BD682G

ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

10 Weeks

Tin

Through Hole

TO-225AA, TO-126-3

NO

3

4.535924g

SILICON

-55°C~150°C TJ

Bulk

1995

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

-100V

40W

260

4A

40

BD682

3

1

PNP

Single

40W

AMPLIFIER

Halogen Free

PNP - Darlington

100V

4A

750 @ 1.5A 3V

500μA

2.5V @ 30mA, 1.5A

100V

2.5V

100V

5V

750

6.35mm

6.35mm

6.35mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

4A

-

-

-

-

-

-

-

-

BD681G vs BD682G
BD682

STMicroelectronics

LAST SHIPMENTS (Last Updated: 1 week ago)

-

-

Through Hole

TO-225AA, TO-126-3

-

3

-

-

-55°C~150°C TJ

Bulk

2008

-

-

Obsolete

1 (Unlimited)

-

-

-

-

40W

-

-

-

BD682

-

-

PNP

Single

40W

-

-

PNP - Darlington

2.5V

4A

750 @ 1.5A 3V

500μA

2.5V @ 30mA, 1.5A

100V

-

100V

5V

750

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

Through Hole

4A

TO-225AA

150°C

-55°C

40W

100V

4A

25MHz

80V

BD681G vs BD682