STMicroelectronics BD681

Name: BD681
Brand: STMicroelectronics
SKU: 2845393-BD681
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BD681

Manufacturer:: STMicroelectronics

Ventron No:: 2845393-BD681

Description:: TRANS NPN DARL 100V 4A SOT-32

ECAD Model:

Datasheet:: BD681

Specifications

STMicroelectronics BD681 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BD681.

Voltage - Collector Emitter Breakdown (Max):
100V
Vce Saturation (Max) @ Ib, Ic:
2.5V @ 30mA, 1.5A
Transistor Type:
NPN - Darlington
Supplier Device Package:
SOT-32-3
Series:
-
Power - Max:
40W
Packaging:
Tube
Package / Case:
TO-225AA, TO-126-3
Operating Temperature:
150°C (TJ)
Mounting Type:
Through Hole
Frequency - Transition:
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 1.5A, 3V
Current - Collector Cutoff (Max):
500µA
Current - Collector (Ic) (Max):
4A

Description

We can supply STMicroelectronics BD681, use the request quote form to request BD681 pirce, STMicroelectronics Datasheet PDF and lead time.ventronchip.com is a professional electronic components distributor. With 3 Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number BD681.The price and lead time for BD681 depending on the quantity required, availability and warehouse location.

BD681 More Descriptions

Bipolar junction transistor, NPN, 4 A, 100 ## Fehler ##, THT, TO-126, BD681
Transistor: NPN; bipolar; 100V; 4A; 40W; -65 150 deg.C; THT; TO126
Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
BD6xxx Series PNP 80 V 4 A Complementary Power Darlington Transistor - SOT-32
Trans Darlington NPN 100V 4A 40000mW 3-Pin(3 Tab) TO-225 Box / TRANS NPN DARL 100V 4A SOT-32
TRANSISTOR, DARLINGTON NPN 4A 100V, TO225AA PKG
Transistor Darlington NPN 4A/100V 40W TO126 BD 681
Transistor, Npn, 100V, 4A, Sot32; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:100V; Transition Frequency Ft:-; Power Dissipation Pd:40W; Dc Collector Current:4A; Dc Current Gain Hfe:750Hfe; Transistor Case Rohs Compliant: Yes |Stmicroelectronics BD681

Product Comparison

The three parts on the right have similar specifications to BD681.

Image

Part Number

Manufacturer

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

Lifecycle Status

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Polarity

Element Configuration

Power - Max

Transistor Application

Halogen Free

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Mount

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Power Dissipation

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Max Breakdown Voltage

Continuous Collector Current

Contact Plating

View Compare
BD681

STMicroelectronics

100V

2.5V @ 30mA, 1.5A

NPN - Darlington

SOT-32-3

-

40W

Tube

TO-225AA, TO-126-3

150°C (TJ)

Through Hole

-

750 @ 1.5A, 3V

500µA

4A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BD680G

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ACTIVE (Last Updated: 1 day ago)

2 Weeks

Through Hole

TO-225AA, TO-126-3

NO

3

17.491656mg

SILICON

-55°C~150°C TJ

Bulk

2008

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

Other Transistors

-80V

40W

260

-4A

40

BD680

3

1

PNP

Single

40W

AMPLIFIER

Halogen Free

PNP - Darlington

80V

4A

750 @ 1.5A 3V

500μA

2.5V @ 30mA, 1.5A

80V

200MHz

2.5V

80V

5V

750

11.04mm

7.74mm

2.66mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

BD681 vs BD680G
BD682

STMicroelectronics

-

-

-

-

-

-

-

-

-

-

-

-

-

-

LAST SHIPMENTS (Last Updated: 1 week ago)

-

Through Hole

TO-225AA, TO-126-3

-

3

-

-

-55°C~150°C TJ

Bulk

2008

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

40W

-

-

-

BD682

-

-

PNP

Single

40W

-

-

PNP - Darlington

2.5V

4A

750 @ 1.5A 3V

500μA

2.5V @ 30mA, 1.5A

100V

25MHz

-

100V

5V

750

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

Through Hole

TO-225AA

150°C

-55°C

40W

100V

4A

80V

4A

-

BD681 vs BD682
BD681G

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ACTIVE (Last Updated: 1 day ago)

7 Weeks

Through Hole

TO-225AA, TO-126-3

NO

3

4.535924g

SILICON

-55°C~150°C TJ

Bulk

1995

e3

yes

Active

1 (Unlimited)

3

EAR99

-

Other Transistors

100V

40W

260

4A

40

BD681

3

1

NPN

Single

-

AMPLIFIER

Halogen Free

NPN - Darlington

100V

4A

750 @ 1.5A 3V

500μA

2.5V @ 30mA, 1.5A

100V

-

2.5V

100V

5V

750

11.04mm

7.74mm

2.66mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

40W

-

-

-

-

Tin

BD681 vs BD681G