Alpha & Omega Semiconductor Inc. AO3442
- Part Number:
- AO3442
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Ventron No:
- 2477977-AO3442
- Description:
- MOSFET N-CH 100V 1A SOT23
- Datasheet:
- AO3442
Alpha & Omega Semiconductor Inc. AO3442 technical specifications, attributes, parameters and parts with similar specifications to Alpha & Omega Semiconductor Inc. AO3442.
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingDigi-Reel®
- Published2009
- JESD-609 Codee3
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- HTS Code8541.29.00.95
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-G3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max1.4W Ta
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs630m Ω @ 1A, 10V
- Vgs(th) (Max) @ Id2.9V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds100pF @ 50V
- Current - Continuous Drain (Id) @ 25°C1A Ta
- Gate Charge (Qg) (Max) @ Vgs6nC @ 10V
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)1A
- Drain Current-Max (Abs) (ID)1A
- Drain-source On Resistance-Max0.63Ohm
- DS Breakdown Voltage-Min100V
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
AO3442 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 100pF @ 50V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 1A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 1A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 100V in order to maintain normal operation.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
AO3442 Features
a continuous drain current (ID) of 1A
a 100V drain to source voltage (Vdss)
AO3442 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AO3442 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 100pF @ 50V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 1A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 1A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 100V in order to maintain normal operation.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
AO3442 Features
a continuous drain current (ID) of 1A
a 100V drain to source voltage (Vdss)
AO3442 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AO3442 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
AO3442 More Descriptions
Trans MOSFET N-CH 100V 1A 3-Pin SOT-23
100V N-Channel MOSFET, SOT23-3, RoHSAlpha & Omega Semiconductor SCT
Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CoC and 2-years warranty / RFQ for pricing
100V N-Channel MOSFET, SOT23-3, RoHSAlpha & Omega Semiconductor SCT
Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CoC and 2-years warranty / RFQ for pricing
The three parts on the right have similar specifications to AO3442.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinRoHS StatusLead FreeNumber of PinsPin CountNumber of ChannelsPower DissipationTurn On Delay TimeTurn-Off Delay TimeThreshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageMax Junction Temperature (Tj)HeightRadiation HardeningReach Compliance CodeView Compare
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AO344216 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3SILICON-55°C~150°C TJDigi-Reel®2009e3Not For New Designs1 (Unlimited)3EAR99Matte Tin (Sn)8541.29.00.95MOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G31SINGLE WITH BUILT-IN DIODE1.4W TaENHANCEMENT MODEN-ChannelSWITCHING630m Ω @ 1A, 10V2.9V @ 250μA100pF @ 50V1A Ta6nC @ 10V100V4.5V 10V±20V1A1A0.63Ohm100VROHS3 CompliantLead Free--------------
-
-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3--55°C~150°C TJTape & Reel (TR)2015-Not For New Designs1 (Unlimited)----MOSFET (Metal Oxide)-------1.4W Ta-N-Channel-28m Ω @ 5.8A, 10V3V @ 250μA820pF @ 15V5.8A Ta17nC @ 10V30V4.5V 10V±20V5.8A---ROHS3 CompliantLead Free3------------
-
18 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3SILICON-55°C~150°C TJTape & Reel (TR)2009-Active1 (Unlimited)3EAR99--MOSFET (Metal Oxide)DUALGULL WING---1SINGLE WITH BUILT-IN DIODE1.4W TaENHANCEMENT MODEP-ChannelSWITCHING85m Ω @ 3.5A, 10V1.4V @ 250μA400pF @ 10V3.5A Ta4.4nC @ 4.5V20V1.8V 10V±12V-3.5A-0.075Ohm-ROHS3 CompliantLead Free3311.4W11 ns22 ns-500mV12V-20V150°C1.25mmNo-
-
--Surface MountTO-236-3, SC-59, SOT-23-3--55°C~150°C TJTape & Reel (TR)--Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-------1.4W Ta-N-Channel-1.7 Ω @ 650mA, 10V2.5V @ 250μA27pF @ 30V650mA Ta-60V4.5V 10V±20V------------------compliant
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