Alpha & Omega Semiconductor Inc. AO3419
- Part Number:
- AO3419
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Ventron No:
- 3069992-AO3419
- Description:
- MOSFET P-CH 20V 3.5A SOT23
- Datasheet:
- AO3419
Alpha & Omega Semiconductor Inc. AO3419 technical specifications, attributes, parameters and parts with similar specifications to Alpha & Omega Semiconductor Inc. AO3419.
- Factory Lead Time18 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2009
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Pin Count3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Number of Channels1
- Power Dissipation-Max1.4W Ta
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.4W
- Turn On Delay Time11 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs85m Ω @ 3.5A, 10V
- Vgs(th) (Max) @ Id1.4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds400pF @ 10V
- Current - Continuous Drain (Id) @ 25°C3.5A Ta
- Gate Charge (Qg) (Max) @ Vgs4.4nC @ 4.5V
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)1.8V 10V
- Vgs (Max)±12V
- Turn-Off Delay Time22 ns
- Continuous Drain Current (ID)-3.5A
- Threshold Voltage-500mV
- Gate to Source Voltage (Vgs)12V
- Drain-source On Resistance-Max0.075Ohm
- Drain to Source Breakdown Voltage-20V
- Max Junction Temperature (Tj)150°C
- Height1.25mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
AO3419 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 400pF @ 10V.This device conducts a continuous drain current (ID) of -3.5A, which is the maximum continuous current transistor can conduct.Using VGS=-20V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -20V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 22 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 11 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 12V.Activation of any electrical operation happens at threshold voltage, and this transistor has -500mV threshold voltage.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 1.8V 10V volts (1.8V 10V).
AO3419 Features
a continuous drain current (ID) of -3.5A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 22 ns
a threshold voltage of -500mV
a 20V drain to source voltage (Vdss)
AO3419 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AO3419 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 400pF @ 10V.This device conducts a continuous drain current (ID) of -3.5A, which is the maximum continuous current transistor can conduct.Using VGS=-20V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -20V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 22 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 11 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 12V.Activation of any electrical operation happens at threshold voltage, and this transistor has -500mV threshold voltage.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 1.8V 10V volts (1.8V 10V).
AO3419 Features
a continuous drain current (ID) of -3.5A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 22 ns
a threshold voltage of -500mV
a 20V drain to source voltage (Vdss)
AO3419 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AO3419 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
AO3419 More Descriptions
Trans MOSFET P-CH 20V 3.5A 3-Pin SOT-23
Small Signal Field-Effect Transistor, 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
20V P-Channel MOSFET, SOT23-3, RoHSAlpha & Omega Semiconductor SCT
Small Signal Field-Effect Transistor, 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
20V P-Channel MOSFET, SOT23-3, RoHSAlpha & Omega Semiconductor SCT
The three parts on the right have similar specifications to AO3419.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTechnologyTerminal PositionTerminal FormPin CountNumber of ElementsConfigurationNumber of ChannelsPower Dissipation-MaxOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageMax Junction Temperature (Tj)HeightRadiation HardeningRoHS StatusLead FreeSubcategoryPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Reach Compliance CodeView Compare
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AO341918 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON-55°C~150°C TJTape & Reel (TR)2009Active1 (Unlimited)3EAR99MOSFET (Metal Oxide)DUALGULL WING31SINGLE WITH BUILT-IN DIODE11.4W TaENHANCEMENT MODE1.4W11 nsP-ChannelSWITCHING85m Ω @ 3.5A, 10V1.4V @ 250μA400pF @ 10V3.5A Ta4.4nC @ 4.5V20V1.8V 10V±12V22 ns-3.5A-500mV12V0.075Ohm-20V150°C1.25mmNoROHS3 CompliantLead Free-----
-
16 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33--55°C~150°C TJTape & Reel (TR)2009Not For New Designs1 (Unlimited)--MOSFET (Metal Oxide)---1Single-1W Ta-1W-P-Channel-70m Ω @ 3.5A, 4.5V1V @ 250μA745pF @ 10V2.9A Ta11nC @ 4.5V20V1.5V 4.5V±8V-2.9A-8V-----ROHS3 Compliant-Other TransistorsNOT SPECIFIEDNOT SPECIFIED-
-
16 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3---55°C~150°C TJDigi-Reel®2009Not For New Designs1 (Unlimited)--MOSFET (Metal Oxide)------1.4W Ta---N-Channel-52m Ω @ 4A, 10V1.5V @ 250μA245pF @ 15V4A Ta10nC @ 10V30V2.5V 10V±12V-4A-------ROHS3 Compliant-----
-
--Surface MountTO-236-3, SC-59, SOT-23-3---55°C~150°C TJTape & Reel (TR)-Obsolete1 (Unlimited)--MOSFET (Metal Oxide)------1.4W Ta---N-Channel-1.7 Ω @ 650mA, 10V2.5V @ 250μA27pF @ 30V650mA Ta-60V4.5V 10V±20V--------------compliant
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