AO3419

Alpha & Omega Semiconductor Inc. AO3419

Part Number:
AO3419
Manufacturer:
Alpha & Omega Semiconductor Inc.
Ventron No:
3069992-AO3419
Description:
MOSFET P-CH 20V 3.5A SOT23
ECAD Model:
Datasheet:
AO3419

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Specifications
Alpha & Omega Semiconductor Inc. AO3419 technical specifications, attributes, parameters and parts with similar specifications to Alpha & Omega Semiconductor Inc. AO3419.
  • Factory Lead Time
    18 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2009
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Pin Count
    3
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Number of Channels
    1
  • Power Dissipation-Max
    1.4W Ta
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.4W
  • Turn On Delay Time
    11 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    85m Ω @ 3.5A, 10V
  • Vgs(th) (Max) @ Id
    1.4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    400pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    3.5A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    4.4nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    1.8V 10V
  • Vgs (Max)
    ±12V
  • Turn-Off Delay Time
    22 ns
  • Continuous Drain Current (ID)
    -3.5A
  • Threshold Voltage
    -500mV
  • Gate to Source Voltage (Vgs)
    12V
  • Drain-source On Resistance-Max
    0.075Ohm
  • Drain to Source Breakdown Voltage
    -20V
  • Max Junction Temperature (Tj)
    150°C
  • Height
    1.25mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
AO3419 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 400pF @ 10V.This device conducts a continuous drain current (ID) of -3.5A, which is the maximum continuous current transistor can conduct.Using VGS=-20V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -20V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 22 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 11 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 12V.Activation of any electrical operation happens at threshold voltage, and this transistor has -500mV threshold voltage.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 1.8V 10V volts (1.8V 10V).

AO3419 Features
a continuous drain current (ID) of -3.5A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 22 ns
a threshold voltage of -500mV
a 20V drain to source voltage (Vdss)


AO3419 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AO3419 applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
AO3419 More Descriptions
Trans MOSFET P-CH 20V 3.5A 3-Pin SOT-23
Small Signal Field-Effect Transistor, 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
20V P-Channel MOSFET, SOT23-3, RoHSAlpha & Omega Semiconductor SCT
Product Comparison
The three parts on the right have similar specifications to AO3419.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Technology
    Terminal Position
    Terminal Form
    Pin Count
    Number of Elements
    Configuration
    Number of Channels
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Max Junction Temperature (Tj)
    Height
    Radiation Hardening
    RoHS Status
    Lead Free
    Subcategory
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Reach Compliance Code
    View Compare
  • AO3419
    AO3419
    18 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2009
    Active
    1 (Unlimited)
    3
    EAR99
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    3
    1
    SINGLE WITH BUILT-IN DIODE
    1
    1.4W Ta
    ENHANCEMENT MODE
    1.4W
    11 ns
    P-Channel
    SWITCHING
    85m Ω @ 3.5A, 10V
    1.4V @ 250μA
    400pF @ 10V
    3.5A Ta
    4.4nC @ 4.5V
    20V
    1.8V 10V
    ±12V
    22 ns
    -3.5A
    -500mV
    12V
    0.075Ohm
    -20V
    150°C
    1.25mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
  • AO3435
    16 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2009
    Not For New Designs
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    1
    Single
    -
    1W Ta
    -
    1W
    -
    P-Channel
    -
    70m Ω @ 3.5A, 4.5V
    1V @ 250μA
    745pF @ 10V
    2.9A Ta
    11nC @ 4.5V
    20V
    1.5V 4.5V
    ±8V
    -
    2.9A
    -
    8V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    Other Transistors
    NOT SPECIFIED
    NOT SPECIFIED
    -
  • AO3434A
    16 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    -55°C~150°C TJ
    Digi-Reel®
    2009
    Not For New Designs
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    1.4W Ta
    -
    -
    -
    N-Channel
    -
    52m Ω @ 4A, 10V
    1.5V @ 250μA
    245pF @ 15V
    4A Ta
    10nC @ 10V
    30V
    2.5V 10V
    ±12V
    -
    4A
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
  • AO3460L
    -
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    1.4W Ta
    -
    -
    -
    N-Channel
    -
    1.7 Ω @ 650mA, 10V
    2.5V @ 250μA
    27pF @ 30V
    650mA Ta
    -
    60V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    compliant
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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