Alpha & Omega Semiconductor Inc. AO3424
- Part Number:
- AO3424
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Ventron No:
- 3586001-AO3424
- Description:
- MOSFET N-CH 30V 2A SOT23
- Datasheet:
- AO3424
Alpha & Omega Semiconductor Inc. AO3424 technical specifications, attributes, parameters and parts with similar specifications to Alpha & Omega Semiconductor Inc. AO3424.
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2009
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Number of Channels1
- Power Dissipation-Max1.4W Ta
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.4W
- Turn On Delay Time3.5 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs80m Ω @ 2A, 10V
- Vgs(th) (Max) @ Id1.8V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds270pF @ 15V
- Current - Continuous Drain (Id) @ 25°C3.8A Ta
- Gate Charge (Qg) (Max) @ Vgs3.2nC @ 4.5V
- Drive Voltage (Max Rds On,Min Rds On)2.5V 10V
- Vgs (Max)±12V
- Turn-Off Delay Time17.5 ns
- Continuous Drain Current (ID)3.8A
- Threshold Voltage1V
- Gate to Source Voltage (Vgs)12V
- Drain-source On Resistance-Max0.055Ohm
- Drain to Source Breakdown Voltage30V
- Max Junction Temperature (Tj)150°C
- Feedback Cap-Max (Crss)25 pF
- Height1.25mm
- RoHS StatusROHS3 Compliant
AO3424 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 270pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 3.8A.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 17.5 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 3.5 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.1V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (2.5V 10V) reduces this device's overall power consumption.
AO3424 Features
a continuous drain current (ID) of 3.8A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 17.5 ns
a threshold voltage of 1V
AO3424 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AO3424 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 270pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 3.8A.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 17.5 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 3.5 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.1V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (2.5V 10V) reduces this device's overall power consumption.
AO3424 Features
a continuous drain current (ID) of 3.8A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 17.5 ns
a threshold voltage of 1V
AO3424 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AO3424 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
AO3424 More Descriptions
Trans MOSFET N-CH 30V 3.8A 3-Pin SOT-23
30V N-Channel MOSFET, SOT23-3, RoHSAlpha & Omega Semiconductor SCT
IC DRIVER DIFF LVDS 4CH 16SOIC
30V N-Channel MOSFET, SOT23-3, RoHSAlpha & Omega Semiconductor SCT
IC DRIVER DIFF LVDS 4CH 16SOIC
The three parts on the right have similar specifications to AO3424.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsConfigurationNumber of ChannelsPower Dissipation-MaxOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageMax Junction Temperature (Tj)Feedback Cap-Max (Crss)HeightRoHS StatusDrain to Source Voltage (Vdss)Radiation HardeningLead FreeHTS CodeSubcategoryQualification StatusReach Compliance CodeView Compare
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AO342416 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON-55°C~150°C TJTape & Reel (TR)2009yesNot For New Designs1 (Unlimited)3EAR99MOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIED31SINGLE WITH BUILT-IN DIODE11.4W TaENHANCEMENT MODE1.4W3.5 nsN-ChannelSWITCHING80m Ω @ 2A, 10V1.8V @ 250μA270pF @ 15V3.8A Ta3.2nC @ 4.5V2.5V 10V±12V17.5 ns3.8A1V12V0.055Ohm30V150°C25 pF1.25mmROHS3 Compliant--------
-
18 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON-55°C~150°C TJTape & Reel (TR)2009-Active1 (Unlimited)3EAR99MOSFET (Metal Oxide)DUALGULL WING--31SINGLE WITH BUILT-IN DIODE11.4W TaENHANCEMENT MODE1.4W11 nsP-ChannelSWITCHING85m Ω @ 3.5A, 10V1.4V @ 250μA400pF @ 10V3.5A Ta4.4nC @ 4.5V1.8V 10V±12V22 ns-3.5A-500mV12V0.075Ohm-20V150°C-1.25mmROHS3 Compliant20VNoLead Free----
-
-Surface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON-55°C~150°C TJTape & Reel (TR)--Obsolete1 (Unlimited)3EAR99MOSFET (Metal Oxide)DUALGULL WING--31SINGLE WITH BUILT-IN DIODE-1W TaENHANCEMENT MODE--N-ChannelSWITCHING52m Ω @ 4.2A, 10V1.8V @ 250μA340pF @ 15V3.5A Ta7.2nC @ 10V4.5V 10V±20V-3.5A--0.052Ohm----ROHS3 Compliant30V--8541.29.00.95FET General Purpose PowerNot Qualified-
-
--Surface MountTO-236-3, SC-59, SOT-23-3---55°C~150°C TJTape & Reel (TR)--Obsolete1 (Unlimited)--MOSFET (Metal Oxide)--------1.4W Ta---N-Channel-1.7 Ω @ 650mA, 10V2.5V @ 250μA27pF @ 30V650mA Ta-4.5V 10V±20V----------60V-----compliant
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