Alpha & Omega Semiconductor Inc. AO3400A
- Part Number:
- AO3400A
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Ventron No:
- 2480899-AO3400A
- Description:
- MOSFET N-CH 30V 5.7A SOT23
- Datasheet:
- AO3400A AO3400A UMW AO3400A
Alpha & Omega Semiconductor Inc. AO3400A technical specifications, attributes, parameters and parts with similar specifications to Alpha & Omega Semiconductor Inc. AO3400A.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Pin Count3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Number of Channels1
- Power Dissipation-Max1.4W Ta
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.4W
- Turn On Delay Time3 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs26.5m Ω @ 5.7A, 10V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds630pF @ 15V
- Current - Continuous Drain (Id) @ 25°C5.7A Ta
- Gate Charge (Qg) (Max) @ Vgs7nC @ 4.5V
- Drive Voltage (Max Rds On,Min Rds On)2.5V 10V
- Vgs (Max)±12V
- Turn-Off Delay Time25 ns
- Continuous Drain Current (ID)5.7A
- Threshold Voltage650mV
- Gate to Source Voltage (Vgs)12V
- Drain-source On Resistance-Max0.0265Ohm
- Drain to Source Breakdown Voltage30V
- Max Junction Temperature (Tj)150°C
- Height1.25mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
AO3400A Description
The AO3400A provides extraordinarily low RDS by combining cutting-edge trench MOSFET technology with a low resistance packaging (ON). This device can be used in PWM applications or as a load switch.
AO3400A Features
VDS
5.7A ID (at VGS=10V)
RDS(ON) = 26.5m (at VGS=10V)
RDS(ON) = 32m (at VGS = 4.5V)
RDS(ON) = 48m (at VGS = 2.5V)
AO3400A Applications Switching applications
5.7A ID (at VGS=10V)
RDS(ON) = 26.5m (at VGS=10V)
RDS(ON) = 32m (at VGS = 4.5V)
RDS(ON) = 48m (at VGS = 2.5V)
AO3400A Applications Switching applications
AO3400A More Descriptions
Trans MOSFET N-CH 30V 5.7A 3-Pin SOT-23
30V 5.8A 32mΩ@10V,5.8A 1.4W N Channel SOT-23 MOSFETs ROHS
30V N-Channel MOSFET, SOT23-3, RoHSAlpha & Omega Semiconductor SCT
Small Signal Field-Effect Transistor, 5.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IC REG LINEAR 2.5V 100MA SOT23-5
Small Signal Field-Effect Transistors
30V 5.8A 32mΩ@10V,5.8A 1.4W N Channel SOT-23 MOSFETs ROHS
30V N-Channel MOSFET, SOT23-3, RoHSAlpha & Omega Semiconductor SCT
Small Signal Field-Effect Transistor, 5.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IC REG LINEAR 2.5V 100MA SOT23-5
Small Signal Field-Effect Transistors
The three parts on the right have similar specifications to AO3400A.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTechnologyTerminal PositionTerminal FormPin CountNumber of ElementsConfigurationNumber of ChannelsPower Dissipation-MaxOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageMax Junction Temperature (Tj)HeightRadiation HardeningRoHS StatusLead FreeDrain to Source Voltage (Vdss)Factory Lead TimeView Compare
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AO3400ASurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON-55°C~150°C TJTape & Reel (TR)2011yesNot For New Designs1 (Unlimited)3EAR99MOSFET (Metal Oxide)DUALGULL WING31SINGLE WITH BUILT-IN DIODE11.4W TaENHANCEMENT MODE1.4W3 nsN-ChannelSWITCHING26.5m Ω @ 5.7A, 10V1.5V @ 250μA630pF @ 15V5.7A Ta7nC @ 4.5V2.5V 10V±12V25 ns5.7A650mV12V0.0265Ohm30V150°C1.25mmNoROHS3 CompliantLead Free---
-
Surface MountSurface MountTO-236-3, SC-59, SOT-23-33--55°C~150°C TJTape & Reel (TR)2015-Not For New Designs1 (Unlimited)--MOSFET (Metal Oxide)------1.4W Ta---N-Channel-28m Ω @ 5.8A, 10V3V @ 250μA820pF @ 15V5.8A Ta17nC @ 10V4.5V 10V±20V-5.8A-------ROHS3 CompliantLead Free30V-
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Surface MountSurface MountTO-236-3, SC-59, SOT-23-3---55°C~150°C TJTape & Reel (TR)2010-Obsolete1 (Unlimited)--MOSFET (Metal Oxide)------1.4W Ta---N-Channel-62m Ω @ 3A, 4.5V1V @ 250μA320pF @ 10V3A Ta3.8nC @ 4.5V1.8V 4.5V±8V-3A-------RoHS Compliant-20V-
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Surface MountSurface MountTO-236-3, SC-59, SOT-23-3---55°C~150°C TJDigi-Reel®2009-Not For New Designs1 (Unlimited)--MOSFET (Metal Oxide)------1.4W Ta---N-Channel-52m Ω @ 4A, 10V1.5V @ 250μA245pF @ 15V4A Ta10nC @ 10V2.5V 10V±12V-4A-------ROHS3 Compliant-30V16 Weeks
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