Toshiba Semiconductor and Storage TH58NVG3S0HBAI6
- Part Number:
- TH58NVG3S0HBAI6
- Manufacturer:
- Toshiba Semiconductor and Storage
- Ventron No:
- 7013686-TH58NVG3S0HBAI6
- Description:
- Memory IC 8mm mm
- ECAD Model:
-
- Datasheet:
- TH58NVG3S0HBAI6
Toshiba Semiconductor and Storage TH58NVG3S0HBAI6 technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage TH58NVG3S0HBAI6.
- Mounting TypeSurface Mount
- Package / Case67-VFBGA
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations67
- TechnologyFLASH - NAND (SLC)
- Voltage - Supply2.7V~3.6V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage3.3V
- Terminal Pitch0.8mm
- JESD-30 CodeR-PBGA-B67
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size8Gb 1G x 8
- Memory TypeNon-Volatile
- Operating ModeASYNCHRONOUS
- Memory FormatFLASH
- Memory InterfaceParallel
- Organization1GX8
- Memory Width8
- Write Cycle Time - Word, Page25ns
- Memory Density8589934592 bit
- Programming Voltage3V
- Height Seated (Max)1mm
- Length8mm
- Width6.5mm
- RoHS StatusRoHS Compliant
TH58NVG3S0HBAI6 Overview
This product was manufactured by Toshiba Semiconductor and Storage, is an advanced Memory electronic component belonging to the Memory category. It comes in a compact 67-VFBGA package/case with a single function. The terminal pitch stands at 0.8mm, ensuring optimal connectivity. The JESD-30 Code for this part is R-PBGA-B67, signifying its high quality and reliability. The minimum supply voltage stands at 2.7V, providing sufficient power for efficient operation. This device operates in asynchronous mode and features a parallel memory interface, making it suitable for various applications. The organization type is 1GX8, offering enhanced performance and efficiency. The write cycle time for word and page operations is 25ns, guaranteeing quick response times. Lastly, the length of the memory module is 8mm, providing ample space for other components.
TH58NVG3S0HBAI6 Features
Package / Case: 67-VFBGA
TH58NVG3S0HBAI6 Applications
There are a lot of Kioxia America, Inc.
TH58NVG3S0HBAI6 Memory applications.
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
This product was manufactured by Toshiba Semiconductor and Storage, is an advanced Memory electronic component belonging to the Memory category. It comes in a compact 67-VFBGA package/case with a single function. The terminal pitch stands at 0.8mm, ensuring optimal connectivity. The JESD-30 Code for this part is R-PBGA-B67, signifying its high quality and reliability. The minimum supply voltage stands at 2.7V, providing sufficient power for efficient operation. This device operates in asynchronous mode and features a parallel memory interface, making it suitable for various applications. The organization type is 1GX8, offering enhanced performance and efficiency. The write cycle time for word and page operations is 25ns, guaranteeing quick response times. Lastly, the length of the memory module is 8mm, providing ample space for other components.
TH58NVG3S0HBAI6 Features
Package / Case: 67-VFBGA
TH58NVG3S0HBAI6 Applications
There are a lot of Kioxia America, Inc.
TH58NVG3S0HBAI6 Memory applications.
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
TH58NVG3S0HBAI6 More Descriptions
8GB SLC NAND 24NM BGA 6.5X8 3.3V (EEPROM) 4K PAGE
IC FLASH 8GBIT PARALLEL 67VFBGA
IC FLASH 8GBIT PARALLEL 67VFBGA
The three parts on the right have similar specifications to TH58NVG3S0HBAI6.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityProgramming VoltageHeight Seated (Max)LengthWidthRoHS StatusSeriesTerminal FormParallel/SerialView Compare
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TH58NVG3S0HBAI6Surface Mount67-VFBGAYES-40°C~85°C TATrayActive3 (168 Hours)67FLASH - NAND (SLC)2.7V~3.6VBOTTOM13.3V0.8mmR-PBGA-B673.6V2.7V8Gb 1G x 8Non-VolatileASYNCHRONOUSFLASHParallel1GX8825ns8589934592 bit3V1mm8mm6.5mmRoHS Compliant---- -
Surface Mount63-VFBGAYES-40°C~85°C TATrayActive3 (168 Hours)63FLASH - NAND (SLC)2.7V~3.6VBOTTOM13.3V0.8mmR-PBGA-B633.6V2.7V8Gb 1G x 8Non-VolatileASYNCHRONOUSFLASHParallel1GX8825ns8589934592 bit3.3V1mm11mm9mmRoHS Compliant---
-
Surface Mount67-VFBGAYES-40°C~85°C TATrayActive3 (168 Hours)67FLASH - NAND (SLC)1.7V~1.95VBOTTOM11.8V0.8mmR-PBGA-B671.95V1.7V8Gb 1G x 8Non-VolatileASYNCHRONOUSFLASH-1GX8825ns8589934592 bit1.8V1mm8mm6.5mmRoHS CompliantBenand™BALLPARALLEL
-
Surface Mount63-BGA--40°C~85°C TATrayActive3 (168 Hours)-FLASH - NAND (SLC)2.7V~3.6V-------4Gb 512M x 8Non-Volatile-FLASHParallel--25ns-----RoHS Compliant---
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