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TH58BYG3S0HBAI4

Toshiba Semiconductor and Storage TH58BYG3S0HBAI4

Part Number:
TH58BYG3S0HBAI4
Manufacturer:
Toshiba Semiconductor and Storage
Ventron No:
7103975-TH58BYG3S0HBAI4
Description:
Benand™ Memory IC Benand™ Series 11mm mm
ECAD Model:
Datasheet:
TH58BYG3S0HBAI4

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Specifications
Toshiba Semiconductor and Storage TH58BYG3S0HBAI4 technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage TH58BYG3S0HBAI4.
  • Mounting Type
    Surface Mount
  • Package / Case
    63-VFBGA
  • Surface Mount
    YES
  • Operating Temperature
    -40°C~85°C TA
  • Packaging
    Tray
  • Series
    Benand™
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    63
  • Technology
    FLASH - NAND (SLC)
  • Voltage - Supply
    1.7V~1.95V
  • Terminal Position
    BOTTOM
  • Number of Functions
    1
  • Supply Voltage
    1.8V
  • Terminal Pitch
    0.8mm
  • JESD-30 Code
    R-PBGA-B63
  • Supply Voltage-Max (Vsup)
    1.95V
  • Supply Voltage-Min (Vsup)
    1.7V
  • Memory Size
    8Gb 1G x 8
  • Memory Type
    Non-Volatile
  • Operating Mode
    ASYNCHRONOUS
  • Memory Format
    FLASH
  • Memory Interface
    Parallel
  • Organization
    1GX8
  • Memory Width
    8
  • Write Cycle Time - Word, Page
    25ns
  • Memory Density
    8589934592 bit
  • Programming Voltage
    1.8V
  • Height Seated (Max)
    1mm
  • Length
    11mm
  • Width
    9mm
  • RoHS Status
    RoHS Compliant
Description
TH58BYG3S0HBAI4 Overview
The product is manufactured by Toshiba Semiconductor and Storage, belongs to the Memory category and features a total of 63 terminations. It is characterized by its terminal position at the bottom, with the JESD-30 code denoting it as R-PBGA-B63. This specific memory component is non-volatile in nature and utilizes flash technology for its organization. The memory density is an impressive 8589934592 bits per chip, while the programming voltage stands at a relatively standard 1.8V. With dimensions measuring 11mm in length and 9mm in width, this product offers both size and power efficiency.

TH58BYG3S0HBAI4 Features
Package / Case: 63-VFBGA


TH58BYG3S0HBAI4 Applications
There are a lot of Kioxia America, Inc.
TH58BYG3S0HBAI4 Memory applications.


networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
TH58BYG3S0HBAI4 More Descriptions
NAND Flash Serial 8Gbit 1.7 to 1.95V 63-Ball TFBGA
IC FLASH 8GBIT PARALLEL 63TFBGA
NAND Flash 1.8V 8Gb SLC BENAND
Product Comparison
The three parts on the right have similar specifications to TH58BYG3S0HBAI4.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Operating Temperature
    Packaging
    Series
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Technology
    Voltage - Supply
    Terminal Position
    Number of Functions
    Supply Voltage
    Terminal Pitch
    JESD-30 Code
    Supply Voltage-Max (Vsup)
    Supply Voltage-Min (Vsup)
    Memory Size
    Memory Type
    Operating Mode
    Memory Format
    Memory Interface
    Organization
    Memory Width
    Write Cycle Time - Word, Page
    Memory Density
    Programming Voltage
    Height Seated (Max)
    Length
    Width
    RoHS Status
    View Compare
  • TH58BYG3S0HBAI4
    TH58BYG3S0HBAI4
    Toshiba Semiconductor and Storage
    Surface Mount
    63-VFBGA
    YES
    -40°C~85°C TA
    Tray
    Benand™
    Active
    3 (168 Hours)
    63
    FLASH - NAND (SLC)
    1.7V~1.95V
    BOTTOM
    1
    1.8V
    0.8mm
    R-PBGA-B63
    1.95V
    1.7V
    8Gb 1G x 8
    Non-Volatile
    ASYNCHRONOUS
    FLASH
    Parallel
    1GX8
    8
    25ns
    8589934592 bit
    1.8V
    1mm
    11mm
    9mm
    RoHS Compliant
    -
  • TH58NVG3S0HBAI4
    TH58NVG3S0HBAI4
    Toshiba Semiconductor and Storage
    Surface Mount
    63-VFBGA
    YES
    -40°C~85°C TA
    Tray
    -
    Active
    3 (168 Hours)
    63
    FLASH - NAND (SLC)
    2.7V~3.6V
    BOTTOM
    1
    3.3V
    0.8mm
    R-PBGA-B63
    3.6V
    2.7V
    8Gb 1G x 8
    Non-Volatile
    ASYNCHRONOUS
    FLASH
    Parallel
    1GX8
    8
    25ns
    8589934592 bit
    3.3V
    1mm
    11mm
    9mm
    RoHS Compliant
    TH58BYG3S0HBAI4 vs TH58NVG3S0HBAI4
  • TH58NVG5S0FTAK0
    TH58NVG5S0FTAK0
    Toshiba Semiconductor and Storage
    Surface Mount
    48-TFSOP (0.724, 18.40mm Width)
    -
    -40°C~85°C TA
    Tray
    -
    Active
    3 (168 Hours)
    -
    FLASH - NAND (SLC)
    2.7V~3.6V
    -
    -
    -
    -
    -
    -
    -
    32Gb 4G x 8
    Non-Volatile
    -
    FLASH
    Parallel
    -
    -
    25ns
    -
    -
    -
    -
    -
    RoHS Compliant
    TH58BYG3S0HBAI4 vs TH58NVG5S0FTAK0
  • TH58BVG2S3HBAI6
    TH58BVG2S3HBAI6
    Toshiba Semiconductor and Storage
    Surface Mount
    67-VFBGA
    -
    -40°C~85°C TA
    Tray
    Benand™
    Active
    3 (168 Hours)
    -
    FLASH - NAND (SLC)
    2.7V~3.6V
    -
    -
    -
    -
    -
    -
    -
    4G 512M x 8
    Non-Volatile
    -
    FLASH
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    TH58BYG3S0HBAI4 vs TH58BVG2S3HBAI6
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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