Toshiba Semiconductor and Storage TH58BVG3S0HTAI0
- Part Number:
- TH58BVG3S0HTAI0
- Manufacturer:
- Toshiba Semiconductor and Storage
- Ventron No:
- 7371136-TH58BVG3S0HTAI0
- Description:
- Benand™ Memory IC Benand™ Series 18.4mm mm
- ECAD Model:
-
- Datasheet:
- TH58BVG3S0HTAI0
Toshiba Semiconductor and Storage TH58BVG3S0HTAI0 technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage TH58BVG3S0HTAI0.
- Mounting TypeSurface Mount
- Package / Case48-TFSOP (0.724, 18.40mm Width)
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTray
- SeriesBenand™
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations48
- TechnologyFLASH - NAND (SLC)
- Voltage - Supply2.7V~3.6V
- Terminal PositionDUAL
- Terminal FormGULL WING
- Number of Functions1
- Supply Voltage3.3V
- Terminal Pitch0.5mm
- JESD-30 CodeR-PDSO-G48
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size8Gb 1G x 8
- Memory TypeNon-Volatile
- Operating ModeASYNCHRONOUS
- Memory FormatFLASH
- Organization1GX8
- Memory Width8
- Write Cycle Time - Word, Page25ns
- Memory Density8589934592 bit
- Parallel/SerialPARALLEL
- Programming Voltage3.3V
- Length18.4mm
- Height Seated (Max)1.2mm
- Width12mm
- RoHS StatusRoHS Compliant
TH58BVG3S0HTAI0 Overview
Non-Volatile is the type of memory it has. There is a Tray case available. The 48-TFSOP (0.724, 18.40mm Width) case contains it. The chip has an 8Gb 1G x 8 memory. This device uses a FLASH-format memory, which is of mainstream design. A wide operating temperature range makes this device ideal for a variety of demanding applications. A voltage of 2.7V~3.6V can be supplied to memory ics. Its recommended mounting type is Surface Mount. The chip has 48 terminations. For a comprehensive working procedure, this part supports as many as 1 functions. In order to operate this memory device, it must be supplied with 3.3V of power. In its target applications, this memory ics plays an important role as a member of the Benand™ series of memory devices. Nonvolatile memory arrays require 3.3V programming voltage to change their state.
TH58BVG3S0HTAI0 Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)
TH58BVG3S0HTAI0 Applications
There are a lot of Kioxia America, Inc.
TH58BVG3S0HTAI0 Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
Non-Volatile is the type of memory it has. There is a Tray case available. The 48-TFSOP (0.724, 18.40mm Width) case contains it. The chip has an 8Gb 1G x 8 memory. This device uses a FLASH-format memory, which is of mainstream design. A wide operating temperature range makes this device ideal for a variety of demanding applications. A voltage of 2.7V~3.6V can be supplied to memory ics. Its recommended mounting type is Surface Mount. The chip has 48 terminations. For a comprehensive working procedure, this part supports as many as 1 functions. In order to operate this memory device, it must be supplied with 3.3V of power. In its target applications, this memory ics plays an important role as a member of the Benand™ series of memory devices. Nonvolatile memory arrays require 3.3V programming voltage to change their state.
TH58BVG3S0HTAI0 Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)
TH58BVG3S0HTAI0 Applications
There are a lot of Kioxia America, Inc.
TH58BVG3S0HTAI0 Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
TH58BVG3S0HTAI0 More Descriptions
R-PDSO-G48 Surface Mount Tray 1GX8 ic memory 25ns 12mm 8589934592bit 2.7V
NAND Flash Serial 3.3V 8G-bit 1G x 8 48-Pin TSOP-I
NAND Flash 8 GBIT CMOS NAND EEPROM
8G(4G x 2)bit, generation: 24nm, ECC logic on the chip, VCC=2.7 to 3.6V
8GB SLC BENAND TSOP 24NM 4K PAGE
NAND Flash Serial 3.3V 8G-bit 1G x 8 48-Pin TSOP-I
NAND Flash 8 GBIT CMOS NAND EEPROM
8G(4G x 2)bit, generation: 24nm, ECC logic on the chip, VCC=2.7 to 3.6V
8GB SLC BENAND TSOP 24NM 4K PAGE
The three parts on the right have similar specifications to TH58BVG3S0HTAI0.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyVoltage - SupplyTerminal PositionTerminal FormNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeMemory FormatOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityParallel/SerialProgramming VoltageLengthHeight Seated (Max)WidthRoHS StatusMemory InterfaceView Compare
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TH58BVG3S0HTAI0Surface Mount48-TFSOP (0.724, 18.40mm Width)YES-40°C~85°C TATrayBenand™Active3 (168 Hours)48FLASH - NAND (SLC)2.7V~3.6VDUALGULL WING13.3V0.5mmR-PDSO-G483.6V2.7V8Gb 1G x 8Non-VolatileASYNCHRONOUSFLASH1GX8825ns8589934592 bitPARALLEL3.3V18.4mm1.2mm12mmRoHS Compliant-- -
Surface Mount63-VFBGAYES-40°C~85°C TATrayBenand™Active3 (168 Hours)63FLASH - NAND (SLC)1.7V~1.95VBOTTOM-11.8V0.8mmR-PBGA-B631.95V1.7V8Gb 1G x 8Non-VolatileASYNCHRONOUSFLASH1GX8825ns8589934592 bit-1.8V11mm1mm9mmRoHS CompliantParallel
-
Surface Mount63-BGA--40°C~85°C TATray-Active3 (168 Hours)-FLASH - NAND (SLC)1.7V~1.95V--------4Gb 512M x 8Non-Volatile-FLASH--25ns------RoHS CompliantParallel
-
Surface Mount67-VFBGAYES-40°C~85°C TATray-Active3 (168 Hours)67FLASH - NAND (SLC)2.7V~3.6VBOTTOM-13.3V0.8mmR-PBGA-B673.6V2.7V8Gb 1G x 8Non-VolatileASYNCHRONOUSFLASH1GX8825ns8589934592 bit-3V8mm1mm6.5mmRoHS CompliantParallel
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