Toshiba Semiconductor and Storage TH58NVG3S0HBAI4

Name: TH58NVG3S0HBAI4
Brand: Toshiba Semiconductor and Storage
SKU: 7374146-TH58NVG3S0HBAI4
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: TH58NVG3S0HBAI4

Manufacturer:: Toshiba Semiconductor and Storage

Ventron No:: 7374146-TH58NVG3S0HBAI4

Description:: Memory IC 11mm mm

ECAD Model:

Datasheet:: TH58NVG3S0HBAI4

Specifications

Toshiba Semiconductor and Storage TH58NVG3S0HBAI4 technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage TH58NVG3S0HBAI4.

Mounting Type
Surface Mount
Package / Case
63-VFBGA
Surface Mount
YES
Operating Temperature
-40°C~85°C TA
Packaging
Tray
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
63
Technology
FLASH - NAND (SLC)
Voltage - Supply
2.7V~3.6V
Terminal Position
BOTTOM
Number of Functions
1
Supply Voltage
3.3V
Terminal Pitch
0.8mm
JESD-30 Code
R-PBGA-B63
Supply Voltage-Max (Vsup)
3.6V
Supply Voltage-Min (Vsup)
2.7V
Memory Size
8Gb 1G x 8
Memory Type
Non-Volatile
Operating Mode
ASYNCHRONOUS
Memory Format
FLASH
Memory Interface
Parallel
Organization
1GX8
Memory Width
8
Write Cycle Time - Word, Page
25ns
Memory Density
8589934592 bit
Programming Voltage
3.3V
Length
11mm
Height Seated (Max)
1mm
Width
9mm
RoHS Status
RoHS Compliant

Description

TH58NVG3S0HBAI4 Overview
In terms of its memory type, it can be classified as Non-Volatile. The case comes in Tray size. The case is embedded in 63-VFBGA. Memory size on the chip is 8Gb 1G x 8. This device uses takes advantage of the FLASH format. The device's extended operating temperature range of -40°C~85°C TA makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 2.7V~3.6V. The recommended mounting type for this device is Surface Mount. On the chip, there are 63 terminations. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 3.3V is required for the operation of this memory device. A programming voltage of 3.3V is required to alter the state of certain nonvolatile memory arrays.

TH58NVG3S0HBAI4 Features
Package / Case: 63-VFBGA

TH58NVG3S0HBAI4 Applications
There are a lot of Kioxia America, Inc.
TH58NVG3S0HBAI4 Memory applications.

eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer

TH58NVG3S0HBAI4 More Descriptions

R-PBGA-B63 Surface Mount Tray 1GX8 ic memory 25ns 9mm 8589934592bit 2.7V
High Temperature Low Noise, Very Low Drift, Precision Voltage References 8-CFP -55 to 210
NAND Flash Serial 3.3V 8G-bit 1G x 8 63-Pin FBGA
NAND Flash 3.3V 8Gbit NAND EEPROM
IC FLASH 8GBIT PARALLEL 63TFBGA
8G(4G x 2)bit, generation: 24nm, VCC=2.7 to 3.6V
8GB SLC NAND 24NM BGA 9X11 3.3V

Product Comparison

The three parts on the right have similar specifications to TH58NVG3S0HBAI4.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Technology

Voltage - Supply

Terminal Position

Number of Functions

Supply Voltage

Terminal Pitch

JESD-30 Code

Supply Voltage-Max (Vsup)

Supply Voltage-Min (Vsup)

Memory Size

Memory Type

Operating Mode

Memory Format

Memory Interface

Organization

Memory Width

Write Cycle Time - Word, Page

Memory Density

Programming Voltage

Length

Height Seated (Max)

Width

RoHS Status

Series

View Compare
TH58NVG3S0HBAI4

Toshiba Semiconductor and Storage

Surface Mount

63-VFBGA

YES

-40°C~85°C TA

Tray

Active

3 (168 Hours)

63

FLASH - NAND (SLC)

2.7V~3.6V

BOTTOM

1

3.3V

0.8mm

R-PBGA-B63

3.6V

2.7V

8Gb 1G x 8

Non-Volatile

ASYNCHRONOUS

FLASH

Parallel

1GX8

8

25ns

8589934592 bit

3.3V

11mm

1mm

9mm

RoHS Compliant

-

-
TH58BYG3S0HBAI4

Toshiba Semiconductor and Storage

Surface Mount

63-VFBGA

YES

-40°C~85°C TA

Tray

Active

3 (168 Hours)

63

FLASH - NAND (SLC)

1.7V~1.95V

BOTTOM

1

1.8V

0.8mm

R-PBGA-B63

1.95V

1.7V

8Gb 1G x 8

Non-Volatile

ASYNCHRONOUS

FLASH

Parallel

1GX8

8

25ns

8589934592 bit

1.8V

11mm

1mm

9mm

RoHS Compliant

Benand™

TH58NVG3S0HBAI4 vs TH58BYG3S0HBAI4
TH58NVG2S3HBAI6

Toshiba Semiconductor and Storage

Surface Mount

63-BGA

-

-40°C~85°C TA

Tray

Active

3 (168 Hours)

-

FLASH - NAND (SLC)

2.7V~3.6V

-

-

-

-

-

-

-

4Gb 512M x 8

Non-Volatile

-

FLASH

Parallel

-

-

25ns

-

-

-

-

-

RoHS Compliant

-

TH58NVG3S0HBAI4 vs TH58NVG2S3HBAI6
TH58NVG3S0HBAI6

Toshiba Semiconductor and Storage

Surface Mount

67-VFBGA

YES

-40°C~85°C TA

Tray

Active

3 (168 Hours)

67

FLASH - NAND (SLC)

2.7V~3.6V

BOTTOM

1

3.3V

0.8mm

R-PBGA-B67

3.6V

2.7V

8Gb 1G x 8

Non-Volatile

ASYNCHRONOUS

FLASH

Parallel

1GX8

8

25ns

8589934592 bit

3V

8mm

1mm

6.5mm

RoHS Compliant

-

TH58NVG3S0HBAI4 vs TH58NVG3S0HBAI6