TH58NVG2S3HBAI6

Toshiba Semiconductor and Storage TH58NVG2S3HBAI6

Part Number:
TH58NVG2S3HBAI6
Manufacturer:
Toshiba Semiconductor and Storage
Ventron No:
7103942-TH58NVG2S3HBAI6
Description:
Memory IC
ECAD Model:
Datasheet:
TH58NVG2S3HBAI6

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Specifications
Toshiba Semiconductor and Storage TH58NVG2S3HBAI6 technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage TH58NVG2S3HBAI6.
  • Mounting Type
    Surface Mount
  • Package / Case
    63-BGA
  • Operating Temperature
    -40°C~85°C TA
  • Packaging
    Tray
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Technology
    FLASH - NAND (SLC)
  • Voltage - Supply
    2.7V~3.6V
  • Memory Size
    4Gb 512M x 8
  • Memory Type
    Non-Volatile
  • Memory Format
    FLASH
  • Memory Interface
    Parallel
  • Write Cycle Time - Word, Page
    25ns
  • RoHS Status
    RoHS Compliant
Description
TH58NVG2S3HBAI6 Overview
The Toshiba Semiconductor and Storage brand offers high-quality memory electronic components for diverse applications. This specific part, characterized by its unique mounting type surface mount, operates efficiently within a temperature range of -40°C to 85°C with TA status ensuring optimal performance. It comes in a compact tray packaging that fits snugly into various designs and spaces. The technology behind this part is based on FLASH - NAND (SLC) method, making it highly reliable and durable. With a voltage supply range of 2.7V to 3.6V, it provides consistent and stable power to ensure smooth operation. The memory size measures up to 4Gb 512M x 8, guaranteeing ample storage space for your data. The memory interface is designed for parallel communication, enhancing efficiency and performance while transferring or accessing data. The write cycle time for word and page operations is incredibly fast, reaching just 25ns, demonstrating the advanced nature of this product. Furthermore, this memory component adheres to the RoHS (Restriction of Hazardous Substances) compliant standard, signifying its commitment to environmental safety and sustainability. Trust this Toshiba Semiconductor and Storage part for your critical applications and enjoy seamless performance with minimal maintenance.

TH58NVG2S3HBAI6 Features
Package / Case: 63-BGA


TH58NVG2S3HBAI6 Applications
There are a lot of Kioxia America, Inc.
TH58NVG2S3HBAI6 Memory applications.


mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
TH58NVG2S3HBAI6 More Descriptions
4GB SLC NAND 24NM BGA 6.5X8 (EEPROM) 2K PAGE 3.3V
IC FLASH 4GBIT PARALLEL 63BGA
Product Comparison
The three parts on the right have similar specifications to TH58NVG2S3HBAI6.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Voltage - Supply
    Memory Size
    Memory Type
    Memory Format
    Memory Interface
    Write Cycle Time - Word, Page
    RoHS Status
    Surface Mount
    Number of Terminations
    Terminal Position
    Number of Functions
    Supply Voltage
    Terminal Pitch
    JESD-30 Code
    Supply Voltage-Max (Vsup)
    Supply Voltage-Min (Vsup)
    Operating Mode
    Organization
    Memory Width
    Memory Density
    Programming Voltage
    Length
    Height Seated (Max)
    Width
    Series
    View Compare
  • TH58NVG2S3HBAI6
    TH58NVG2S3HBAI6
    Surface Mount
    63-BGA
    -40°C~85°C TA
    Tray
    Active
    3 (168 Hours)
    FLASH - NAND (SLC)
    2.7V~3.6V
    4Gb 512M x 8
    Non-Volatile
    FLASH
    Parallel
    25ns
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • TH58NVG3S0HBAI4
    Surface Mount
    63-VFBGA
    -40°C~85°C TA
    Tray
    Active
    3 (168 Hours)
    FLASH - NAND (SLC)
    2.7V~3.6V
    8Gb 1G x 8
    Non-Volatile
    FLASH
    Parallel
    25ns
    RoHS Compliant
    YES
    63
    BOTTOM
    1
    3.3V
    0.8mm
    R-PBGA-B63
    3.6V
    2.7V
    ASYNCHRONOUS
    1GX8
    8
    8589934592 bit
    3.3V
    11mm
    1mm
    9mm
    -
  • TH58BYG3S0HBAI4
    Surface Mount
    63-VFBGA
    -40°C~85°C TA
    Tray
    Active
    3 (168 Hours)
    FLASH - NAND (SLC)
    1.7V~1.95V
    8Gb 1G x 8
    Non-Volatile
    FLASH
    Parallel
    25ns
    RoHS Compliant
    YES
    63
    BOTTOM
    1
    1.8V
    0.8mm
    R-PBGA-B63
    1.95V
    1.7V
    ASYNCHRONOUS
    1GX8
    8
    8589934592 bit
    1.8V
    11mm
    1mm
    9mm
    Benand™
  • TH58NYG2S3HBAI6
    Surface Mount
    63-BGA
    -40°C~85°C TA
    Tray
    Active
    3 (168 Hours)
    FLASH - NAND (SLC)
    1.7V~1.95V
    4Gb 512M x 8
    Non-Volatile
    FLASH
    Parallel
    25ns
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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