Toshiba Semiconductor and Storage TH58NVG2S3HBAI6
- Part Number:
- TH58NVG2S3HBAI6
- Manufacturer:
- Toshiba Semiconductor and Storage
- Ventron No:
- 7103942-TH58NVG2S3HBAI6
- Description:
- Memory IC
- Datasheet:
- TH58NVG2S3HBAI6
Toshiba Semiconductor and Storage TH58NVG2S3HBAI6 technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage TH58NVG2S3HBAI6.
- Mounting TypeSurface Mount
- Package / Case63-BGA
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologyFLASH - NAND (SLC)
- Voltage - Supply2.7V~3.6V
- Memory Size4Gb 512M x 8
- Memory TypeNon-Volatile
- Memory FormatFLASH
- Memory InterfaceParallel
- Write Cycle Time - Word, Page25ns
- RoHS StatusRoHS Compliant
TH58NVG2S3HBAI6 Overview
The Toshiba Semiconductor and Storage brand offers high-quality memory electronic components for diverse applications. This specific part, characterized by its unique mounting type surface mount, operates efficiently within a temperature range of -40°C to 85°C with TA status ensuring optimal performance. It comes in a compact tray packaging that fits snugly into various designs and spaces. The technology behind this part is based on FLASH - NAND (SLC) method, making it highly reliable and durable. With a voltage supply range of 2.7V to 3.6V, it provides consistent and stable power to ensure smooth operation. The memory size measures up to 4Gb 512M x 8, guaranteeing ample storage space for your data. The memory interface is designed for parallel communication, enhancing efficiency and performance while transferring or accessing data. The write cycle time for word and page operations is incredibly fast, reaching just 25ns, demonstrating the advanced nature of this product. Furthermore, this memory component adheres to the RoHS (Restriction of Hazardous Substances) compliant standard, signifying its commitment to environmental safety and sustainability. Trust this Toshiba Semiconductor and Storage part for your critical applications and enjoy seamless performance with minimal maintenance.
TH58NVG2S3HBAI6 Features
Package / Case: 63-BGA
TH58NVG2S3HBAI6 Applications
There are a lot of Kioxia America, Inc.
TH58NVG2S3HBAI6 Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
The Toshiba Semiconductor and Storage brand offers high-quality memory electronic components for diverse applications. This specific part, characterized by its unique mounting type surface mount, operates efficiently within a temperature range of -40°C to 85°C with TA status ensuring optimal performance. It comes in a compact tray packaging that fits snugly into various designs and spaces. The technology behind this part is based on FLASH - NAND (SLC) method, making it highly reliable and durable. With a voltage supply range of 2.7V to 3.6V, it provides consistent and stable power to ensure smooth operation. The memory size measures up to 4Gb 512M x 8, guaranteeing ample storage space for your data. The memory interface is designed for parallel communication, enhancing efficiency and performance while transferring or accessing data. The write cycle time for word and page operations is incredibly fast, reaching just 25ns, demonstrating the advanced nature of this product. Furthermore, this memory component adheres to the RoHS (Restriction of Hazardous Substances) compliant standard, signifying its commitment to environmental safety and sustainability. Trust this Toshiba Semiconductor and Storage part for your critical applications and enjoy seamless performance with minimal maintenance.
TH58NVG2S3HBAI6 Features
Package / Case: 63-BGA
TH58NVG2S3HBAI6 Applications
There are a lot of Kioxia America, Inc.
TH58NVG2S3HBAI6 Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
TH58NVG2S3HBAI6 More Descriptions
4GB SLC NAND 24NM BGA 6.5X8 (EEPROM) 2K PAGE 3.3V
IC FLASH 4GBIT PARALLEL 63BGA
IC FLASH 4GBIT PARALLEL 63BGA
The three parts on the right have similar specifications to TH58NVG2S3HBAI6.
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ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageRoHS StatusSurface MountNumber of TerminationsTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityProgramming VoltageLengthHeight Seated (Max)WidthSeriesView Compare
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TH58NVG2S3HBAI6Surface Mount63-BGA-40°C~85°C TATrayActive3 (168 Hours)FLASH - NAND (SLC)2.7V~3.6V4Gb 512M x 8Non-VolatileFLASHParallel25nsRoHS Compliant-------------------
-
Surface Mount63-VFBGA-40°C~85°C TATrayActive3 (168 Hours)FLASH - NAND (SLC)2.7V~3.6V8Gb 1G x 8Non-VolatileFLASHParallel25nsRoHS CompliantYES63BOTTOM13.3V0.8mmR-PBGA-B633.6V2.7VASYNCHRONOUS1GX888589934592 bit3.3V11mm1mm9mm-
-
Surface Mount63-VFBGA-40°C~85°C TATrayActive3 (168 Hours)FLASH - NAND (SLC)1.7V~1.95V8Gb 1G x 8Non-VolatileFLASHParallel25nsRoHS CompliantYES63BOTTOM11.8V0.8mmR-PBGA-B631.95V1.7VASYNCHRONOUS1GX888589934592 bit1.8V11mm1mm9mmBenand™
-
Surface Mount63-BGA-40°C~85°C TATrayActive3 (168 Hours)FLASH - NAND (SLC)1.7V~1.95V4Gb 512M x 8Non-VolatileFLASHParallel25nsRoHS Compliant------------------
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