Toshiba Semiconductor and Storage TH58BVG2S3HBAI6
- Part Number:
- TH58BVG2S3HBAI6
- Manufacturer:
- Toshiba Semiconductor and Storage
- Ventron No:
- 7364891-TH58BVG2S3HBAI6
- Description:
- Benand™ Memory IC Benand™ Series
- ECAD Model:
-
- Datasheet:
- TH58BVG2S3HBAI6
Toshiba Semiconductor and Storage TH58BVG2S3HBAI6 technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage TH58BVG2S3HBAI6.
- Mounting TypeSurface Mount
- Package / Case67-VFBGA
- Operating Temperature-40°C~85°C TA
- PackagingTray
- SeriesBenand™
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologyFLASH - NAND (SLC)
- Voltage - Supply2.7V~3.6V
- Memory Size4G 512M x 8
- Memory TypeNon-Volatile
- Memory FormatFLASH
- RoHS StatusRoHS Compliant
TH58BVG2S3HBAI6 Overview
Its memory type can be classified as Non-Volatile. It comes in a Tray. It is available in 67-VFBGA case. The memory size of the chip is 4G 512M x 8 Mb. This device utilizes a FLASH format memory which is of mainstream design. With an extended designed operating temperature of -40°C~85°C TA, this device is capable of lots of demanding applications. It is supplied votage within 2.7V~3.6V. Its recommended mounting type is Surface Mount. As a member of the Benand™ series memory devices, this part plays an important role for its target applications.
TH58BVG2S3HBAI6 Features
Package / Case: 67-VFBGA
TH58BVG2S3HBAI6 Applications
There are a lot of Kioxia America, Inc.
TH58BVG2S3HBAI6 Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
Its memory type can be classified as Non-Volatile. It comes in a Tray. It is available in 67-VFBGA case. The memory size of the chip is 4G 512M x 8 Mb. This device utilizes a FLASH format memory which is of mainstream design. With an extended designed operating temperature of -40°C~85°C TA, this device is capable of lots of demanding applications. It is supplied votage within 2.7V~3.6V. Its recommended mounting type is Surface Mount. As a member of the Benand™ series memory devices, this part plays an important role for its target applications.
TH58BVG2S3HBAI6 Features
Package / Case: 67-VFBGA
TH58BVG2S3HBAI6 Applications
There are a lot of Kioxia America, Inc.
TH58BVG2S3HBAI6 Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
TH58BVG2S3HBAI6 More Descriptions
NAND Flash Serial 4Gbit 2.7 to 3.6V 67-Ball VFBGA
NAND Flash 4Gb SLC BENAND
OEMs, CMs ONLY (NO BROKERS)
IC FLASH 4G 67VFBGA
NAND Flash 4Gb SLC BENAND
OEMs, CMs ONLY (NO BROKERS)
IC FLASH 4G 67VFBGA
The three parts on the right have similar specifications to TH58BVG2S3HBAI6.
-
ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeMemory FormatRoHS StatusMemory InterfaceWrite Cycle Time - Word, PageView Compare
-
TH58BVG2S3HBAI6Surface Mount67-VFBGA-40°C~85°C TATrayBenand™Active3 (168 Hours)FLASH - NAND (SLC)2.7V~3.6V4G 512M x 8Non-VolatileFLASHRoHS Compliant--- -
Surface Mount48-TFSOP (0.724, 18.40mm Width)-40°C~85°C TATray-Active3 (168 Hours)FLASH - NAND (SLC)2.7V~3.6V32Gb 4G x 8Non-VolatileFLASHRoHS CompliantParallel25ns
-
Surface Mount63-BGA-40°C~85°C TATray-Active3 (168 Hours)FLASH - NAND (SLC)1.7V~1.95V4Gb 512M x 8Non-VolatileFLASHRoHS CompliantParallel25ns
-
Surface Mount63-BGA-40°C~85°C TATray-Active3 (168 Hours)FLASH - NAND (SLC)2.7V~3.6V4Gb 512M x 8Non-VolatileFLASHRoHS CompliantParallel25ns
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