Toshiba Semiconductor and Storage TH58NYG2S3HBAI6
- Part Number:
- TH58NYG2S3HBAI6
- Manufacturer:
- Toshiba Semiconductor and Storage
- Ventron No:
- 7103964-TH58NYG2S3HBAI6
- Description:
- Memory IC
- Datasheet:
- TH58NYG2S3HBAI6
Toshiba Semiconductor and Storage TH58NYG2S3HBAI6 technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage TH58NYG2S3HBAI6.
- Mounting TypeSurface Mount
- Package / Case63-BGA
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologyFLASH - NAND (SLC)
- Voltage - Supply1.7V~1.95V
- Memory Size4Gb 512M x 8
- Memory TypeNon-Volatile
- Memory FormatFLASH
- Memory InterfaceParallel
- Write Cycle Time - Word, Page25ns
- RoHS StatusRoHS Compliant
TH58NYG2S3HBAI6 Overview
The product in question is manufactured by Toshiba Semiconductor and Storage, a renowned brand in the Memory category. This specific component is an essential Memory electronic element. It comes with a surface mount option and is categorized under the 63-BGA package/case type. With an operating temperature ranging from -40°C to 85°C TA, it is currently active on the market. This particular technology uses FLASH - NAND (SLC) as its underlying technology, while the voltage supply lies between 1.7V~1.95V. The memory format employed here is FLASH, and the interface is a Parallel one. The write cycle time for word operations is 25ns, and the page size stands at 25ns as well. Lastly, it's worth mentioning that this product is fully compliant with the RoHS status, making it safe for use in various applications.
TH58NYG2S3HBAI6 Features
Package / Case: 63-BGA
TH58NYG2S3HBAI6 Applications
There are a lot of Kioxia America, Inc.
TH58NYG2S3HBAI6 Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
The product in question is manufactured by Toshiba Semiconductor and Storage, a renowned brand in the Memory category. This specific component is an essential Memory electronic element. It comes with a surface mount option and is categorized under the 63-BGA package/case type. With an operating temperature ranging from -40°C to 85°C TA, it is currently active on the market. This particular technology uses FLASH - NAND (SLC) as its underlying technology, while the voltage supply lies between 1.7V~1.95V. The memory format employed here is FLASH, and the interface is a Parallel one. The write cycle time for word operations is 25ns, and the page size stands at 25ns as well. Lastly, it's worth mentioning that this product is fully compliant with the RoHS status, making it safe for use in various applications.
TH58NYG2S3HBAI6 Features
Package / Case: 63-BGA
TH58NYG2S3HBAI6 Applications
There are a lot of Kioxia America, Inc.
TH58NYG2S3HBAI6 Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
TH58NYG2S3HBAI6 More Descriptions
4GB SLC NAND 24NM BGA 6.5X8 (EEPROM) 2K PAGE 1.8V
IC FLASH 4GBIT PARALLEL 63BGA
OEMs, CMs ONLY (NO BROKERS)
IC FLASH 4GBIT PARALLEL 63BGA
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to TH58NYG2S3HBAI6.
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ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageRoHS StatusSurface MountSeriesNumber of TerminationsTerminal PositionTerminal FormNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityParallel/SerialProgramming VoltageLengthHeight Seated (Max)WidthView Compare
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TH58NYG2S3HBAI6Surface Mount63-BGA-40°C~85°C TATrayActive3 (168 Hours)FLASH - NAND (SLC)1.7V~1.95V4Gb 512M x 8Non-VolatileFLASHParallel25nsRoHS Compliant---------------------
-
Surface Mount48-TFSOP (0.724, 18.40mm Width)-40°C~85°C TATrayActive3 (168 Hours)FLASH - NAND (SLC)2.7V~3.6V8Gb 1G x 8Non-VolatileFLASH-25nsRoHS CompliantYESBenand™48DUALGULL WING13.3V0.5mmR-PDSO-G483.6V2.7VASYNCHRONOUS1GX888589934592 bitPARALLEL3.3V18.4mm1.2mm12mm
-
Surface Mount63-VFBGA-40°C~85°C TATrayActive3 (168 Hours)FLASH - NAND (SLC)1.7V~1.95V8Gb 1G x 8Non-VolatileFLASHParallel25nsRoHS CompliantYESBenand™63BOTTOM-11.8V0.8mmR-PBGA-B631.95V1.7VASYNCHRONOUS1GX888589934592 bit-1.8V11mm1mm9mm
-
Surface Mount63-BGA-40°C~85°C TATrayActive3 (168 Hours)FLASH - NAND (SLC)2.7V~3.6V4Gb 512M x 8Non-VolatileFLASHParallel25nsRoHS Compliant--------------------
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