Toshiba Semiconductor and Storage TH58BYG3S0HBAI6
- Part Number:
- TH58BYG3S0HBAI6
- Manufacturer:
- Toshiba Semiconductor and Storage
- Ventron No:
- 7371164-TH58BYG3S0HBAI6
- Description:
- Benand™ Memory IC Benand™ Series 8mm mm
- ECAD Model:
-
- Datasheet:
- TH58BYG3S0HBAI6
Toshiba Semiconductor and Storage TH58BYG3S0HBAI6 technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage TH58BYG3S0HBAI6.
- Mounting TypeSurface Mount
- Package / Case67-VFBGA
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTray
- SeriesBenand™
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations67
- TechnologyFLASH - NAND (SLC)
- Voltage - Supply1.7V~1.95V
- Terminal PositionBOTTOM
- Terminal FormBALL
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch0.8mm
- JESD-30 CodeR-PBGA-B67
- Supply Voltage-Max (Vsup)1.95V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size8Gb 1G x 8
- Memory TypeNon-Volatile
- Operating ModeASYNCHRONOUS
- Memory FormatFLASH
- Organization1GX8
- Memory Width8
- Write Cycle Time - Word, Page25ns
- Memory Density8589934592 bit
- Parallel/SerialPARALLEL
- Programming Voltage1.8V
- Length8mm
- Height Seated (Max)1mm
- Width6.5mm
- RoHS StatusRoHS Compliant
TH58BYG3S0HBAI6 Overview
Its memory type can be classified as Non-Volatile. It comes in a Tray. It is available in 67-VFBGA case. The memory size of the chip is 8Gb 1G x 8 Mb. This device utilizes a FLASH format memory which is of mainstream design. With an extended designed operating temperature of -40°C~85°C TA, this device is capable of lots of demanding applications. It is supplied votage within 1.7V~1.95V. Its recommended mounting type is Surface Mount. 67 terminations are planted on the chip. This part supports as many as 1 functions for the comprehensive working procedure. This ic memory chip is designed to be supplied with 1.8V. As a member of the Benand™ series memory devices, this part plays an important role for its target applications. To alter the state of certain nonvolatile memory arrays, 1.8V programming voltage is required.
TH58BYG3S0HBAI6 Features
Package / Case: 67-VFBGA
TH58BYG3S0HBAI6 Applications
There are a lot of Kioxia America, Inc.
TH58BYG3S0HBAI6 Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
Its memory type can be classified as Non-Volatile. It comes in a Tray. It is available in 67-VFBGA case. The memory size of the chip is 8Gb 1G x 8 Mb. This device utilizes a FLASH format memory which is of mainstream design. With an extended designed operating temperature of -40°C~85°C TA, this device is capable of lots of demanding applications. It is supplied votage within 1.7V~1.95V. Its recommended mounting type is Surface Mount. 67 terminations are planted on the chip. This part supports as many as 1 functions for the comprehensive working procedure. This ic memory chip is designed to be supplied with 1.8V. As a member of the Benand™ series memory devices, this part plays an important role for its target applications. To alter the state of certain nonvolatile memory arrays, 1.8V programming voltage is required.
TH58BYG3S0HBAI6 Features
Package / Case: 67-VFBGA
TH58BYG3S0HBAI6 Applications
There are a lot of Kioxia America, Inc.
TH58BYG3S0HBAI6 Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
TH58BYG3S0HBAI6 More Descriptions
Active PARALLEL BALL BOTTOM ic memory -40C~85C TA 1.7V 8589934592bit 6.5mm
NAND Flash Parallel 1.8V 8G-bit 1G x 8 67-Pin VFBGA
8G(4G x 2)bit, generation: 24nm, ECC logic on the chip, VCC=1.7 to 1.95V
8GB SLC NAND 24NM BGA 6.5X8 1.8V
NAND Flash Parallel 1.8V 8G-bit 1G x 8 67-Pin VFBGA
8G(4G x 2)bit, generation: 24nm, ECC logic on the chip, VCC=1.7 to 1.95V
8GB SLC NAND 24NM BGA 6.5X8 1.8V
The three parts on the right have similar specifications to TH58BYG3S0HBAI6.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyVoltage - SupplyTerminal PositionTerminal FormNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeMemory FormatOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityParallel/SerialProgramming VoltageLengthHeight Seated (Max)WidthRoHS StatusMemory InterfaceView Compare
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TH58BYG3S0HBAI6Surface Mount67-VFBGAYES-40°C~85°C TATrayBenand™Active3 (168 Hours)67FLASH - NAND (SLC)1.7V~1.95VBOTTOMBALL11.8V0.8mmR-PBGA-B671.95V1.7V8Gb 1G x 8Non-VolatileASYNCHRONOUSFLASH1GX8825ns8589934592 bitPARALLEL1.8V8mm1mm6.5mmRoHS Compliant-- -
Surface Mount63-VFBGAYES-40°C~85°C TATray-Active3 (168 Hours)63FLASH - NAND (SLC)2.7V~3.6VBOTTOM-13.3V0.8mmR-PBGA-B633.6V2.7V8Gb 1G x 8Non-VolatileASYNCHRONOUSFLASH1GX8825ns8589934592 bit-3.3V11mm1mm9mmRoHS CompliantParallel
-
Surface Mount63-VFBGAYES-40°C~85°C TATrayBenand™Active3 (168 Hours)63FLASH - NAND (SLC)1.7V~1.95VBOTTOM-11.8V0.8mmR-PBGA-B631.95V1.7V8Gb 1G x 8Non-VolatileASYNCHRONOUSFLASH1GX8825ns8589934592 bit-1.8V11mm1mm9mmRoHS CompliantParallel
-
Surface Mount63-BGA--40°C~85°C TATray-Active3 (168 Hours)-FLASH - NAND (SLC)1.7V~1.95V--------4Gb 512M x 8Non-Volatile-FLASH--25ns------RoHS CompliantParallel
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