Diodes Incorporated ZXMP6A16KTC
- Part Number:
- ZXMP6A16KTC
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2478796-ZXMP6A16KTC
- Description:
- MOSFET P-CH 60V DPAK
- Datasheet:
- ZXMP6A16KTC
Diodes Incorporated ZXMP6A16KTC technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXMP6A16KTC.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Weight3.949996g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2002
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Resistance85mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2.11W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation9.76W
- Case ConnectionDRAIN
- Turn On Delay Time3.5 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs85m Ω @ 2.9A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1021pF @ 30V
- Current - Continuous Drain (Id) @ 25°C5.4A Ta
- Gate Charge (Qg) (Max) @ Vgs24.2nC @ 10V
- Rise Time4.1ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time35 ns
- Continuous Drain Current (ID)8.2A
- Threshold Voltage-1V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)5.4A
- Drain to Source Breakdown Voltage-60V
- Pulsed Drain Current-Max (IDM)27.2A
- Height2.39mm
- Length6.73mm
- Width6.22mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZXMP6A16KTC Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1021pF @ 30V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 8.2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -60V, and this device has a drainage-to-source breakdown voltage of -60VV.Drain current refers to the maximum continuous current a device can conduct, and it is 5.4A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 35 ns.Peak drain current is 27.2A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 3.5 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is -1V, which means that it will not activate any of its functions when its threshold voltage reaches -1V.For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
ZXMP6A16KTC Features
a continuous drain current (ID) of 8.2A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 27.2A.
a threshold voltage of -1V
a 60V drain to source voltage (Vdss)
ZXMP6A16KTC Applications
There are a lot of Diodes Incorporated
ZXMP6A16KTC applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1021pF @ 30V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 8.2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -60V, and this device has a drainage-to-source breakdown voltage of -60VV.Drain current refers to the maximum continuous current a device can conduct, and it is 5.4A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 35 ns.Peak drain current is 27.2A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 3.5 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is -1V, which means that it will not activate any of its functions when its threshold voltage reaches -1V.For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
ZXMP6A16KTC Features
a continuous drain current (ID) of 8.2A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 27.2A.
a threshold voltage of -1V
a 60V drain to source voltage (Vdss)
ZXMP6A16KTC Applications
There are a lot of Diodes Incorporated
ZXMP6A16KTC applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
ZXMP6A16KTC More Descriptions
Trans MOSFET P-CH 60V 8.2A 3-Pin(2 Tab) DPAK T/R / MOSFET P-CH 60V DPAK
P-Channel 60 V 0.085 O Surface Mount Power MOSFET - TO-252
P-CHANNEL ENHANCEMENT MODE MOSFET, 60V VDS, 20±V VGSDiodes Inc SCT
MOSFET P-Channel 60V 8.2A DPAK
MOSFET, P, 60V, D-PAK ;ROHS COMPLIANT: YES
DIODES INC. - ZXMP6A16KTC - MOSFET, P, 60V, D-PAK
MOSFET, P, 60V, D-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:8.2A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):85mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:9.76W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:D-PAK; No. of Pins:3; Current Id Max:-8.2A; Package / Case:DPAK; Power Dissipation Pd:9.76W; Termination Type:SMD; Voltage Vds Typ:-60V; Voltage Vgs Max:-20V; Voltage Vgs Rds on Measurement:-10V
P-Channel 60 V 0.085 O Surface Mount Power MOSFET - TO-252
P-CHANNEL ENHANCEMENT MODE MOSFET, 60V VDS, 20±V VGSDiodes Inc SCT
MOSFET P-Channel 60V 8.2A DPAK
MOSFET, P, 60V, D-PAK ;ROHS COMPLIANT: YES
DIODES INC. - ZXMP6A16KTC - MOSFET, P, 60V, D-PAK
MOSFET, P, 60V, D-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:8.2A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):85mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:9.76W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:D-PAK; No. of Pins:3; Current Id Max:-8.2A; Package / Case:DPAK; Power Dissipation Pd:9.76W; Termination Type:SMD; Voltage Vds Typ:-60V; Voltage Vgs Max:-20V; Voltage Vgs Rds on Measurement:-10V
The three parts on the right have similar specifications to ZXMP6A16KTC.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeContact PlatingTerminationVoltage - Rated DCTerminal PositionCurrent RatingDual Supply VoltageMax Junction Temperature (Tj)Nominal VgsAdditional FeatureManufacturer Package IdentifierView Compare
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ZXMP6A16KTC17 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-6333.949996gSILICON-55°C~150°C TJTape & Reel (TR)2002e3noActive1 (Unlimited)2EAR9985mOhmMatte Tin (Sn)Other TransistorsMOSFET (Metal Oxide)GULL WING260403R-PSSO-G2112.11W TaSingleENHANCEMENT MODE9.76WDRAIN3.5 nsP-ChannelSWITCHING85m Ω @ 2.9A, 10V1V @ 250μA1021pF @ 30V5.4A Ta24.2nC @ 10V4.1ns60V10V±20V10 ns35 ns8.2A-1V20V5.4A-60V27.2A2.39mm6.73mm6.22mmNo SVHCNoROHS3 CompliantLead Free-----------
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17 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2003e3noActive1 (Unlimited)4EAR9960mOhm-Other TransistorsMOSFET (Metal Oxide)GULL WING260404-112W TaSingleENHANCEMENT MODE3.9WDRAIN2.33 nsP-ChannelSWITCHING60m Ω @ 3.8A, 10V1V @ 250μA1007pF @ 20V4.6A Ta26.1nC @ 10V8.84ns40V4.5V 10V±20V12.54 ns29.18 ns6.4A-1V20V--40V-1.8mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead FreeTinSMD/SMT-40VDUAL-6.4A-40V150°C-1 V--
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17 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3noActive1 (Unlimited)4EAR9945mOhm-Other TransistorsMOSFET (Metal Oxide)GULL WING260404-112W TaSingleENHANCEMENT MODE2WDRAIN3.8 nsP-ChannelSWITCHING45m Ω @ 4.2A, 10V1V @ 250μA1022pF @ 15V5.4A Ta29.6nC @ 10V6.5ns30V4.5V 10V±20V21.4 ns37.1 ns-5.4A-1V20V--30V-1.8mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead FreeTin--30VDUAL-7.5A-150°C-LOW THRESHOLD-
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17 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-6333.949996gSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99235mOhm--MOSFET (Metal Oxide)GULL WING260404R-PDSO-G4112.15W TaSingleENHANCEMENT MODE4.24W-4.3 nsP-ChannelSWITCHING235m Ω @ 2.1A, 10V4V @ 250μA717pF @ 50V3A Ta16.5nC @ 10V5.2ns100V6V 10V±20V12.1 ns20 ns4.6A-20V--100V-2.52mm6.73mm6.22mmNo SVHCNoROHS3 CompliantLead FreeTin--DUAL--150°C-FAST SWITCHING, LOW THRESHOLDTO252 (DPAK)
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