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ZXMP6A13GTA

Diodes Incorporated ZXMP6A13GTA

Part Number:
ZXMP6A13GTA
Manufacturer:
Diodes Incorporated
Ventron No:
2478598-ZXMP6A13GTA
Description:
MOSFET P-CH 60V 1.7A SOT223
ECAD Model:
Datasheet:
ZXMP6A13GTA

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Specifications
Diodes Incorporated ZXMP6A13GTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXMP6A13GTA.
  • Factory Lead Time
    17 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Number of Pins
    4
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2009
  • JESD-609 Code
    e3
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Resistance
    390mOhm
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -60V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -2.3A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    4
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3.9W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    1.6 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    390m Ω @ 900mA, 10V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    219pF @ 30V
  • Current - Continuous Drain (Id) @ 25°C
    1.7A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    5.9nC @ 10V
  • Rise Time
    2.2ns
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    5.7 ns
  • Turn-Off Delay Time
    11.2 ns
  • Continuous Drain Current (ID)
    2.3A
  • Threshold Voltage
    -1V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -60V
  • Pulsed Drain Current-Max (IDM)
    7.8A
  • Height
    1.65mm
  • Length
    6.7mm
  • Width
    3.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
ZXMP6A13GTA Description
The ZXMP6A13GTA from Diodes Incorporated is a P-channel enhancement mode MOSFET (metal-oxide-semiconductor field-effect transistor) that can be used in circuits for power control and battery charging. Because of the device's high power density and low on-state resistance, efficiency is increased and power consumption is decreased. Because of its small SOT23-3 packaging, it is perfect for usage in small, cramped designs. In order to ensure safe and dependable operation, the ZXMP6A13GTA is additionally outfitted with a number of protection measures, including as overtemperature and overvoltage protection.

ZXMP6A13GTA Features
SOT23-3 package
P-channel MOSFET
High power density
Overvoltage protection
High temperature range
Low on-state resistance
Overtemperature protection

ZXMP6A13GTA Applications
LED lighting
Motor control
Battery charging
DC-DC converters
Portable electronics
Power management
Automotive electronics
ZXMP6A13GTA More Descriptions
ZXMP6A13G Series 60 V 390 mOhm P-Channel Enhancement Mode MOSFET - SOT-223
Trans MOSFET P-CH 60V 2.3A 4-Pin(3 Tab) SOT-223 T/R
Mosfet Bvdss: 41V~60V Sot223 T&r 1K Rohs Compliant: Yes |Diodes Inc. ZXMP6A13GTA
MOSFET, P CH, 60V, 1.7A, SOT223; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.7A; Source Voltage Vds:-60V; On Resistance
MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: P Variants: Enhancement mode Power dissipation: 2 W
MOSFET, P CH, 60V, 1.7A, SOT223; Transistor Polarity: P Channel; Continuous Drain Current Id: -1.7A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.39ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 2W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (15-Jan-2019); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C
Product Comparison
The three parts on the right have similar specifications to ZXMP6A13GTA.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Termination
    Dual Supply Voltage
    Max Junction Temperature (Tj)
    Nominal Vgs
    Terminal Finish
    Additional Feature
    Drain Current-Max (Abs) (ID)
    Manufacturer Package Identifier
    JESD-30 Code
    View Compare
  • ZXMP6A13GTA
    ZXMP6A13GTA
    Diodes Incorporated
    17 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    4
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2009
    e3
    no
    Active
    1 (Unlimited)
    4
    EAR99
    390mOhm
    Other Transistors
    -60V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -2.3A
    30
    4
    1
    1
    2W Ta
    Single
    ENHANCEMENT MODE
    3.9W
    DRAIN
    1.6 ns
    P-Channel
    SWITCHING
    390m Ω @ 900mA, 10V
    1V @ 250μA
    219pF @ 30V
    1.7A Ta
    5.9nC @ 10V
    2.2ns
    60V
    4.5V 10V
    ±20V
    5.7 ns
    11.2 ns
    2.3A
    -1V
    20V
    -60V
    7.8A
    1.65mm
    6.7mm
    3.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • ZXMP4A16GTA
    ZXMP4A16GTA
    Diodes Incorporated
    17 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    4
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2003
    e3
    no
    Active
    1 (Unlimited)
    4
    EAR99
    60mOhm
    Other Transistors
    -40V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -6.4A
    40
    4
    1
    1
    2W Ta
    Single
    ENHANCEMENT MODE
    3.9W
    DRAIN
    2.33 ns
    P-Channel
    SWITCHING
    60m Ω @ 3.8A, 10V
    1V @ 250μA
    1007pF @ 20V
    4.6A Ta
    26.1nC @ 10V
    8.84ns
    40V
    4.5V 10V
    ±20V
    12.54 ns
    29.18 ns
    6.4A
    -1V
    20V
    -40V
    -
    1.8mm
    6.7mm
    3.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    SMD/SMT
    -40V
    150°C
    -1 V
    -
    -
    -
    -
    -
    ZXMP6A13GTA vs ZXMP4A16GTA
  • ZXMP6A17GTA
    ZXMP6A17GTA
    Diodes Incorporated
    17 Weeks
    -
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    4
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e3
    no
    Active
    1 (Unlimited)
    4
    EAR99
    125mOhm
    Other Transistors
    -60V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -4.1A
    40
    4
    1
    1
    2W Ta
    Single
    ENHANCEMENT MODE
    2W
    DRAIN
    2.6 ns
    P-Channel
    SWITCHING
    125m Ω @ 2.2A, 10V
    1V @ 250μA
    637pF @ 30V
    3A Ta
    17.7nC @ 10V
    3.4ns
    60V
    4.5V 10V
    ±20V
    11.3 ns
    26.2 ns
    -3A
    -1V
    20V
    -60V
    -
    1.8mm
    6.7mm
    3.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    150°C
    -
    Matte Tin (Sn)
    HIGH RELIABILITY
    3A
    -
    -
    ZXMP6A13GTA vs ZXMP6A17GTA
  • ZXMP10A16KTC
    ZXMP10A16KTC
    Diodes Incorporated
    17 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    3.949996g
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    no
    Active
    1 (Unlimited)
    4
    EAR99
    235mOhm
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -
    40
    4
    1
    1
    2.15W Ta
    Single
    ENHANCEMENT MODE
    4.24W
    -
    4.3 ns
    P-Channel
    SWITCHING
    235m Ω @ 2.1A, 10V
    4V @ 250μA
    717pF @ 50V
    3A Ta
    16.5nC @ 10V
    5.2ns
    100V
    6V 10V
    ±20V
    12.1 ns
    20 ns
    4.6A
    -
    20V
    -100V
    -
    2.52mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    150°C
    -
    -
    FAST SWITCHING, LOW THRESHOLD
    -
    TO252 (DPAK)
    R-PDSO-G4
    ZXMP6A13GTA vs ZXMP10A16KTC
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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