Diodes Incorporated ZXMP6A13FTA
- Part Number:
- ZXMP6A13FTA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2483412-ZXMP6A13FTA
- Description:
- MOSFET P-CH 60V 0.9A SOT23-3
- Datasheet:
- ZXMP6A13FTA
Diodes Incorporated ZXMP6A13FTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXMP6A13FTA.
- Factory Lead Time17 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance600mOhm
- Additional FeatureLOW THRESHOLD
- SubcategoryOther Transistors
- Voltage - Rated DC-60V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-1.1A
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max625mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation625mW
- Turn On Delay Time1.6 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs400m Ω @ 900mA, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds219pF @ 30V
- Current - Continuous Drain (Id) @ 25°C900mA Ta
- Gate Charge (Qg) (Max) @ Vgs5.9nC @ 10V
- Rise Time2.2ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)5.7 ns
- Turn-Off Delay Time11.2 ns
- Continuous Drain Current (ID)1.1A
- Threshold Voltage-3V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)0.9A
- Height1.02mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZXMP6A13FTA Description
The ZXMP6A13FTA is a 60V P-Channel enhancement MODE MOSFET. A P-channel MOSFET uses hole flow as the charge carrier, which has less mobility than the electron flow used in N-channel MOSFETs. This MOSFET ZXMP6A13FTA utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for high-efficiency power management applications.
ZXMP6A13FTA Features
Fast switching speed Low input capacitance Low gate charge Totally Lead-Free & Fully RoHS compliant Halogen and Antimony Free. “Green” Device Qualified to AEC-Q101 Standards for High Reliability
ZXMP6A13FTA Applications
DC-DC Converters Power Management Functions Relay and Solenoid Driving Motor Control
The ZXMP6A13FTA is a 60V P-Channel enhancement MODE MOSFET. A P-channel MOSFET uses hole flow as the charge carrier, which has less mobility than the electron flow used in N-channel MOSFETs. This MOSFET ZXMP6A13FTA utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for high-efficiency power management applications.
ZXMP6A13FTA Features
Fast switching speed Low input capacitance Low gate charge Totally Lead-Free & Fully RoHS compliant Halogen and Antimony Free. “Green” Device Qualified to AEC-Q101 Standards for High Reliability
ZXMP6A13FTA Applications
DC-DC Converters Power Management Functions Relay and Solenoid Driving Motor Control
ZXMP6A13FTA More Descriptions
Trans MOSFET P-CH 60V 1.1A 3-Pin SOT-23 T/R / MOSFET P-CH 60V 0.9A SOT23-3
Single P-Channel 60 V 806 mW 5.9 nC Silicon Surface Mount Mosfet - SOT-23
MOSFET P-Channel 60V 1.1A SOT23 | Diodes Inc ZXMP6A13FTA
MOSFET,P CH,60V,0.9A,SOT23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.1A; Source Voltage Vds:-60V; On Resistance
Transistors - FETs, MOSFETs - Single 1 (Unlimited) TO-236-3, SC-59, SOT-23-3 Surface Mount MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 400m Ω @ 900mA, 10V 900mA Ta -55°C~150°C TJ MOSFET P-CH 60V 0.9A SOT23-3
MOSFET,P CH,60V,0.9A,SOT23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -1.1A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.4ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 625mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: -1.1A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Voltage Vgs Max: -20V
Single P-Channel 60 V 806 mW 5.9 nC Silicon Surface Mount Mosfet - SOT-23
MOSFET P-Channel 60V 1.1A SOT23 | Diodes Inc ZXMP6A13FTA
MOSFET,P CH,60V,0.9A,SOT23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.1A; Source Voltage Vds:-60V; On Resistance
Transistors - FETs, MOSFETs - Single 1 (Unlimited) TO-236-3, SC-59, SOT-23-3 Surface Mount MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 400m Ω @ 900mA, 10V 900mA Ta -55°C~150°C TJ MOSFET P-CH 60V 0.9A SOT23-3
MOSFET,P CH,60V,0.9A,SOT23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -1.1A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.4ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 625mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: -1.1A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Voltage Vgs Max: -20V
The three parts on the right have similar specifications to ZXMP6A13FTA.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminationCase ConnectionDrain to Source Breakdown VoltageDual Supply VoltageMax Junction Temperature (Tj)Nominal VgsManufacturer Package IdentifierJESD-30 CodeTerminal FinishPulsed Drain Current-Max (IDM)View Compare
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ZXMP6A13FTA17 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3yesActive1 (Unlimited)3EAR99600mOhmLOW THRESHOLDOther Transistors-60VMOSFET (Metal Oxide)DUALGULL WING260-1.1A40311625mW TaSingleENHANCEMENT MODE625mW1.6 nsP-ChannelSWITCHING400m Ω @ 900mA, 10V3V @ 250μA219pF @ 30V900mA Ta5.9nC @ 10V2.2ns60V4.5V 10V±20V5.7 ns11.2 ns1.1A-3V20V0.9A1.02mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free-----------
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17 WeeksTinSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2003e3noActive1 (Unlimited)4EAR9960mOhm-Other Transistors-40VMOSFET (Metal Oxide)DUALGULL WING260-6.4A404112W TaSingleENHANCEMENT MODE3.9W2.33 nsP-ChannelSWITCHING60m Ω @ 3.8A, 10V1V @ 250μA1007pF @ 20V4.6A Ta26.1nC @ 10V8.84ns40V4.5V 10V±20V12.54 ns29.18 ns6.4A-1V20V-1.8mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead FreeSMD/SMTDRAIN-40V-40V150°C-1 V----
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17 WeeksTinSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-6333.949996gSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99235mOhmFAST SWITCHING, LOW THRESHOLD--MOSFET (Metal Oxide)DUALGULL WING260-404112.15W TaSingleENHANCEMENT MODE4.24W4.3 nsP-ChannelSWITCHING235m Ω @ 2.1A, 10V4V @ 250μA717pF @ 50V3A Ta16.5nC @ 10V5.2ns100V6V 10V±20V12.1 ns20 ns4.6A-20V-2.52mm6.73mm6.22mmNo SVHCNoROHS3 CompliantLead Free---100V-150°C-TO252 (DPAK)R-PDSO-G4--
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17 Weeks-Surface MountSurface MountTO-261-4, TO-261AA-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99160mOhmLOW THRESHOLD; FAST SWITCHINGOther Transistors-70VMOSFET (Metal Oxide)DUALGULL WING260-3.7A404112W TaSingleENHANCEMENT MODE3.9W2.5 nsP-ChannelSWITCHING160m Ω @ 2.1A, 10V1V @ 250μA635pF @ 40V2.6A Ta18nC @ 10V3.4ns70V4.5V 10V±20V8 ns27.9 ns3.7A-20V-1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free-DRAIN-----R-PDSO-G4Matte Tin (Sn)9.6A
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