Diodes Incorporated ZXMP10A17E6TA
- Part Number:
- ZXMP10A17E6TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2478140-ZXMP10A17E6TA
- Description:
- MOSFET P-CH 100V 1.3A SOT23-6
- Datasheet:
- ZXMP10A17E6TA
Diodes Incorporated ZXMP10A17E6TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXMP10A17E6TA.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6
- Number of Pins6
- Weight14.996898mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Resistance350mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-100V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-1.8A
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count6
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.1W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.1W
- Turn On Delay Time3 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs350m Ω @ 1.4A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds424pF @ 50V
- Current - Continuous Drain (Id) @ 25°C1.3A Ta
- Gate Charge (Qg) (Max) @ Vgs6.1nC @ 5V
- Rise Time3.5ns
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Vgs (Max)±20V
- Polarity/Channel TypeN-CHANNEL
- Fall Time (Typ)7.2 ns
- Turn-Off Delay Time13.4 ns
- Continuous Drain Current (ID)1.6A
- Threshold Voltage-2V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-100V
- Pulsed Drain Current-Max (IDM)7.7A
- Height1.3mm
- Length3.1mm
- Width1.8mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZXMP10A17E6TA Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 424pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.6A amps.In this device, the drain-source breakdown voltage is -100V and VGS=-100V, so the drain-source breakdown voltage is -100V in this case.It is [13.4 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 7.7A.A turn-on delay time of 3 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is -2V.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (6V 10V).
ZXMP10A17E6TA Features
a continuous drain current (ID) of 1.6A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 13.4 ns
based on its rated peak drain current 7.7A.
a threshold voltage of -2V
a 100V drain to source voltage (Vdss)
ZXMP10A17E6TA Applications
There are a lot of Diodes Incorporated
ZXMP10A17E6TA applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 424pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.6A amps.In this device, the drain-source breakdown voltage is -100V and VGS=-100V, so the drain-source breakdown voltage is -100V in this case.It is [13.4 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 7.7A.A turn-on delay time of 3 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is -2V.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (6V 10V).
ZXMP10A17E6TA Features
a continuous drain current (ID) of 1.6A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 13.4 ns
based on its rated peak drain current 7.7A.
a threshold voltage of -2V
a 100V drain to source voltage (Vdss)
ZXMP10A17E6TA Applications
There are a lot of Diodes Incorporated
ZXMP10A17E6TA applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
ZXMP10A17E6TA More Descriptions
P-Channel 100 V 0.35 Ohm Power MOSFET Surface Mount - SOT-23-6
MOSFET P-Channel 100V 1.6A SOT23-6 | Diodes Inc ZXMP10A17E6TA
MOSFET,P CH,100V,1.3A,SOT23-6; Transistor Polarity:P Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):350mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:1.1W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:-1.6A; Power Dissipation Pd:1.1W; Voltage Vgs Max:-20V
MOSFET P-Channel 100V 1.6A SOT23-6 | Diodes Inc ZXMP10A17E6TA
MOSFET,P CH,100V,1.3A,SOT23-6; Transistor Polarity:P Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):350mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:1.1W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:-1.6A; Power Dissipation Pd:1.1W; Voltage Vgs Max:-20V
The three parts on the right have similar specifications to ZXMP10A17E6TA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Polarity/Channel TypeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMax Operating TemperatureMin Operating TemperatureMax Power DissipationFeedback Cap-Max (Crss)Contact PlatingAdditional FeatureCase ConnectionMax Junction Temperature (Tj)View Compare
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ZXMP10A17E6TA17 WeeksSurface MountSurface MountSOT-23-6614.996898mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3yesActive1 (Unlimited)6EAR99350mOhmMatte Tin (Sn)Other Transistors-100VMOSFET (Metal Oxide)DUALGULL WING260-1.8A406111.1W TaSingleENHANCEMENT MODE1.1W3 nsP-ChannelSWITCHING350m Ω @ 1.4A, 10V4V @ 250μA424pF @ 50V1.3A Ta6.1nC @ 5V3.5ns100V6V 10V±20VN-CHANNEL7.2 ns13.4 ns1.6A-2V20V-100V7.7A1.3mm3.1mm1.8mmNo SVHCNoROHS3 CompliantLead Free---------
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13 WeeksSurface MountSurface MountTO-261-4, TO-261AA4---Cut Tape (CT)2009e3noDiscontinued1 (Unlimited)4EAR99350mOhmMatte Tin (Sn)Other Transistors-100VMOSFET (Metal Oxide)DUALGULL WING260-1.6A40411-SingleENHANCEMENT MODE3.9W3 nsP-ChannelSWITCHING350m Ω @ 1.4A, 10V4V @ 250μA424pF @ 50V1.7A Ta10.7nC @ 10V3.5ns100V---7.2 ns13.4 ns2.4A-20V-100V-1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free150°C-55°C3.9W-----
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36 WeeksSurface MountSurface MountSOT-23-3 Flat Leads37.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesObsolete1 (Unlimited)3EAR9928OhmMatte Tin (Sn)--MOSFET (Metal Oxide)DUAL-260-403111W TaSingleENHANCEMENT MODE1.5W7 nsP-ChannelSWITCHING28 Ω @ 150mA, 10V3.5V @ 250μA100pF @ 25V137mA Ta-15ns200V10V±20V-15 ns12 ns137mA-20V-200V-1mm3mm1.7mmNo SVHCNoROHS3 CompliantLead Free---7 pF----
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17 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3noActive1 (Unlimited)4EAR9945mOhm-Other Transistors-30VMOSFET (Metal Oxide)DUALGULL WING260-7.5A404112W TaSingleENHANCEMENT MODE2W3.8 nsP-ChannelSWITCHING45m Ω @ 4.2A, 10V1V @ 250μA1022pF @ 15V5.4A Ta29.6nC @ 10V6.5ns30V4.5V 10V±20V-21.4 ns37.1 ns-5.4A-1V20V-30V-1.8mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free----TinLOW THRESHOLDDRAIN150°C
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