Diodes Incorporated ZVP4424GTA
- Part Number:
- ZVP4424GTA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2478371-ZVP4424GTA
- Description:
- MOSFET P-CH 240V 0.48A SOT223
- Datasheet:
- ZVP4424GTA
Diodes Incorporated ZVP4424GTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVP4424GTA.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Resistance9Ohm
- Terminal FinishMatte Tin (Sn)
- Voltage - Rated DC-240V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-1A
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count4
- JESD-30 CodeR-PDSO-G4
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2.5W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.5W
- Case ConnectionDRAIN
- Turn On Delay Time8 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs9 Ω @ 200mA, 10V
- Vgs(th) (Max) @ Id2V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds200pF @ 25V
- Current - Continuous Drain (Id) @ 25°C480mA Ta
- Rise Time8ns
- Drain to Source Voltage (Vdss)240V
- Drive Voltage (Max Rds On,Min Rds On)3.5V 10V
- Vgs (Max)±40V
- Fall Time (Typ)20 ns
- Turn-Off Delay Time26 ns
- Continuous Drain Current (ID)480mA
- Gate to Source Voltage (Vgs)40V
- Drain Current-Max (Abs) (ID)0.48A
- Drain to Source Breakdown Voltage-240V
- Pulsed Drain Current-Max (IDM)1A
- Height1.65mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZVP4424GTA Overview
A device's maximum input capacitance is 200pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 480mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-240V, and this device has a drain-to-source breakdown voltage of -240V voltage.Its drain current is 0.48A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 26 ns.Its maximum pulsed drain current is 1A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 40V.To operate this transistor, you need to apply a 240V drain to source voltage (Vdss).This device uses no drive voltage (3.5V 10V) to reduce its overall power consumption.
ZVP4424GTA Features
a continuous drain current (ID) of 480mA
a drain-to-source breakdown voltage of -240V voltage
the turn-off delay time is 26 ns
based on its rated peak drain current 1A.
a 240V drain to source voltage (Vdss)
ZVP4424GTA Applications
There are a lot of Diodes Incorporated
ZVP4424GTA applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 200pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 480mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-240V, and this device has a drain-to-source breakdown voltage of -240V voltage.Its drain current is 0.48A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 26 ns.Its maximum pulsed drain current is 1A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 40V.To operate this transistor, you need to apply a 240V drain to source voltage (Vdss).This device uses no drive voltage (3.5V 10V) to reduce its overall power consumption.
ZVP4424GTA Features
a continuous drain current (ID) of 480mA
a drain-to-source breakdown voltage of -240V voltage
the turn-off delay time is 26 ns
based on its rated peak drain current 1A.
a 240V drain to source voltage (Vdss)
ZVP4424GTA Applications
There are a lot of Diodes Incorporated
ZVP4424GTA applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
ZVP4424GTA More Descriptions
ZVP4424G Series 240 V 9 Ohm P-Channel Enhancement Mode Vertical DMOS FET-SOT-223
Trans MOSFET P-CH 240V 0.48A 4-Pin (3 Tab) SOT-223 T/R
Mosfet Bvdss: 101V~250V Sot223 T&r 1K Rohs Compliant: Yes |Diodes Inc. ZVP4424GTA
MOSFET P-Channel 240V 0.48A SOT223 | Diodes Inc ZVP4424GTA
Trans MOSFET P-CH 240V 0.48A 4-Pin (3 Tab) SOT-223 T/R
Mosfet Bvdss: 101V~250V Sot223 T&r 1K Rohs Compliant: Yes |Diodes Inc. ZVP4424GTA
MOSFET P-Channel 240V 0.48A SOT223 | Diodes Inc ZVP4424GTA
The three parts on the right have similar specifications to ZVP4424GTA.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeFactory Lead TimeNumber of PinsSubcategoryGate Charge (Qg) (Max) @ VgsReach Compliance CodeQualification StatusThreshold VoltageFeedback Cap-Max (Crss)View Compare
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ZVP4424GTASurface MountSurface MountTO-261-4, TO-261AA7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR999OhmMatte Tin (Sn)-240VMOSFET (Metal Oxide)DUALGULL WING260-1A404R-PDSO-G4112.5W TaSingleENHANCEMENT MODE2.5WDRAIN8 nsP-ChannelSWITCHING9 Ω @ 200mA, 10V2V @ 1mA200pF @ 25V480mA Ta8ns240V3.5V 10V±40V20 ns26 ns480mA40V0.48A-240V1A1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free---------
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Surface MountSurface MountSOT-23-614.996898mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)6EAR9914OhmMatte Tin (Sn)-250VMOSFET (Metal Oxide)DUALGULL WING260-197mA406-111.1W TaSingleENHANCEMENT MODE1.1W-1.53 nsP-ChannelSWITCHING14 Ω @ 200mA, 10V2V @ 1mA73pF @ 25V197mA Ta3.78ns250V3.5V 10V±40V3.78 ns17.5 ns197mA40V--250V-1.3mm3.1mm1.8mmNo SVHCNoROHS3 CompliantLead Free17 Weeks6Other Transistors3.45nC @ 10V----
-
Through HoleThrough HoleE-Line-3453.59237mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3-Obsolete1 (Unlimited)3EAR99-MATTE TIN-50VMOSFET (Metal Oxide)-WIRE260-175mA403R-PSIP-W311625mW TaSingleENHANCEMENT MODE625mW-10 nsP-ChannelSWITCHING10 Ω @ 100mA, 5V2V @ 1mA40pF @ 25V175mA Ta10ns50V5V±20V10 ns18 ns175mA20V--50V------RoHS CompliantLead Free----unknownNot Qualified--
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Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)453.59237mgSILICON-55°C~150°C TJBulk2012e3yesObsolete1 (Unlimited)3EAR9910OhmMatte Tin (Sn)-50VMOSFET (Metal Oxide)BOTTOMWIRE260-175mA403-11625mW TaSingleENHANCEMENT MODE625mW-10 nsP-Channel-10 Ω @ 100mA, 5V2V @ 1mA40pF @ 25V175mA Ta10ns50V5V±20V10 ns18 ns170mA20V---4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead Free-3Other Transistors----2V6 pF
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