ZVP4424GTA

Diodes Incorporated ZVP4424GTA

Part Number:
ZVP4424GTA
Manufacturer:
Diodes Incorporated
Ventron No:
2478371-ZVP4424GTA
Description:
MOSFET P-CH 240V 0.48A SOT223
ECAD Model:
Datasheet:
ZVP4424GTA

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Specifications
Diodes Incorporated ZVP4424GTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVP4424GTA.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Resistance
    9Ohm
  • Terminal Finish
    Matte Tin (Sn)
  • Voltage - Rated DC
    -240V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -1A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    4
  • JESD-30 Code
    R-PDSO-G4
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2.5W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    8 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    9 Ω @ 200mA, 10V
  • Vgs(th) (Max) @ Id
    2V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    200pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    480mA Ta
  • Rise Time
    8ns
  • Drain to Source Voltage (Vdss)
    240V
  • Drive Voltage (Max Rds On,Min Rds On)
    3.5V 10V
  • Vgs (Max)
    ±40V
  • Fall Time (Typ)
    20 ns
  • Turn-Off Delay Time
    26 ns
  • Continuous Drain Current (ID)
    480mA
  • Gate to Source Voltage (Vgs)
    40V
  • Drain Current-Max (Abs) (ID)
    0.48A
  • Drain to Source Breakdown Voltage
    -240V
  • Pulsed Drain Current-Max (IDM)
    1A
  • Height
    1.65mm
  • Length
    6.7mm
  • Width
    3.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
ZVP4424GTA Overview
A device's maximum input capacitance is 200pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 480mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-240V, and this device has a drain-to-source breakdown voltage of -240V voltage.Its drain current is 0.48A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 26 ns.Its maximum pulsed drain current is 1A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 40V.To operate this transistor, you need to apply a 240V drain to source voltage (Vdss).This device uses no drive voltage (3.5V 10V) to reduce its overall power consumption.

ZVP4424GTA Features
a continuous drain current (ID) of 480mA
a drain-to-source breakdown voltage of -240V voltage
the turn-off delay time is 26 ns
based on its rated peak drain current 1A.
a 240V drain to source voltage (Vdss)


ZVP4424GTA Applications
There are a lot of Diodes Incorporated
ZVP4424GTA applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
ZVP4424GTA More Descriptions
ZVP4424G Series 240 V 9 Ohm P-Channel Enhancement Mode Vertical DMOS FET-SOT-223
Trans MOSFET P-CH 240V 0.48A 4-Pin (3 Tab) SOT-223 T/R
Mosfet Bvdss: 101V~250V Sot223 T&r 1K Rohs Compliant: Yes |Diodes Inc. ZVP4424GTA
MOSFET P-Channel 240V 0.48A SOT223 | Diodes Inc ZVP4424GTA
Product Comparison
The three parts on the right have similar specifications to ZVP4424GTA.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Factory Lead Time
    Number of Pins
    Subcategory
    Gate Charge (Qg) (Max) @ Vgs
    Reach Compliance Code
    Qualification Status
    Threshold Voltage
    Feedback Cap-Max (Crss)
    View Compare
  • ZVP4424GTA
    ZVP4424GTA
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    no
    Active
    1 (Unlimited)
    4
    EAR99
    9Ohm
    Matte Tin (Sn)
    -240V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -1A
    40
    4
    R-PDSO-G4
    1
    1
    2.5W Ta
    Single
    ENHANCEMENT MODE
    2.5W
    DRAIN
    8 ns
    P-Channel
    SWITCHING
    9 Ω @ 200mA, 10V
    2V @ 1mA
    200pF @ 25V
    480mA Ta
    8ns
    240V
    3.5V 10V
    ±40V
    20 ns
    26 ns
    480mA
    40V
    0.48A
    -240V
    1A
    1.65mm
    6.7mm
    3.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • ZVP4525E6TA
    Surface Mount
    Surface Mount
    SOT-23-6
    14.996898mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    14Ohm
    Matte Tin (Sn)
    -250V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -197mA
    40
    6
    -
    1
    1
    1.1W Ta
    Single
    ENHANCEMENT MODE
    1.1W
    -
    1.53 ns
    P-Channel
    SWITCHING
    14 Ω @ 200mA, 10V
    2V @ 1mA
    73pF @ 25V
    197mA Ta
    3.78ns
    250V
    3.5V 10V
    ±40V
    3.78 ns
    17.5 ns
    197mA
    40V
    -
    -250V
    -
    1.3mm
    3.1mm
    1.8mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    17 Weeks
    6
    Other Transistors
    3.45nC @ 10V
    -
    -
    -
    -
  • ZVP4105ASTOB
    Through Hole
    Through Hole
    E-Line-3
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    MATTE TIN
    -50V
    MOSFET (Metal Oxide)
    -
    WIRE
    260
    -175mA
    40
    3
    R-PSIP-W3
    1
    1
    625mW Ta
    Single
    ENHANCEMENT MODE
    625mW
    -
    10 ns
    P-Channel
    SWITCHING
    10 Ω @ 100mA, 5V
    2V @ 1mA
    40pF @ 25V
    175mA Ta
    10ns
    50V
    5V
    ±20V
    10 ns
    18 ns
    175mA
    20V
    -
    -50V
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    unknown
    Not Qualified
    -
    -
  • ZVP4105A
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Bulk
    2012
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    10Ohm
    Matte Tin (Sn)
    -50V
    MOSFET (Metal Oxide)
    BOTTOM
    WIRE
    260
    -175mA
    40
    3
    -
    1
    1
    625mW Ta
    Single
    ENHANCEMENT MODE
    625mW
    -
    10 ns
    P-Channel
    -
    10 Ω @ 100mA, 5V
    2V @ 1mA
    40pF @ 25V
    175mA Ta
    10ns
    50V
    5V
    ±20V
    10 ns
    18 ns
    170mA
    20V
    -
    -
    -
    4.01mm
    4.77mm
    2.41mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    3
    Other Transistors
    -
    -
    -
    -2V
    6 pF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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