Diodes Incorporated ZVP4105ASTOB
- Part Number:
- ZVP4105ASTOB
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2488756-ZVP4105ASTOB
- Description:
- MOSFET P-CH 50V 0.175A TO92-3
- Datasheet:
- ZVP4105ASTOB
Diodes Incorporated ZVP4105ASTOB technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVP4105ASTOB.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseE-Line-3
- Weight453.59237mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- Voltage - Rated DC-50V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codeunknown
- Current Rating-175mA
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- JESD-30 CodeR-PSIP-W3
- Qualification StatusNot Qualified
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max625mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation625mW
- Turn On Delay Time10 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs10 Ω @ 100mA, 5V
- Vgs(th) (Max) @ Id2V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds40pF @ 25V
- Current - Continuous Drain (Id) @ 25°C175mA Ta
- Rise Time10ns
- Drain to Source Voltage (Vdss)50V
- Drive Voltage (Max Rds On,Min Rds On)5V
- Vgs (Max)±20V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time18 ns
- Continuous Drain Current (ID)175mA
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-50V
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
ZVP4105ASTOB Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 40pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 175mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -50V, and this device has a drainage-to-source breakdown voltage of -50VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 18 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 50V is required between drain and source (Vdss).Using drive voltage (5V), this device contributes to a reduction in overall power consumption.
ZVP4105ASTOB Features
a continuous drain current (ID) of 175mA
a drain-to-source breakdown voltage of -50V voltage
the turn-off delay time is 18 ns
a 50V drain to source voltage (Vdss)
ZVP4105ASTOB Applications
There are a lot of Diodes Incorporated
ZVP4105ASTOB applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 40pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 175mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -50V, and this device has a drainage-to-source breakdown voltage of -50VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 18 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 50V is required between drain and source (Vdss).Using drive voltage (5V), this device contributes to a reduction in overall power consumption.
ZVP4105ASTOB Features
a continuous drain current (ID) of 175mA
a drain-to-source breakdown voltage of -50V voltage
the turn-off delay time is 18 ns
a 50V drain to source voltage (Vdss)
ZVP4105ASTOB Applications
There are a lot of Diodes Incorporated
ZVP4105ASTOB applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
ZVP4105ASTOB More Descriptions
MOSFET P-CH 50V 0.175A TO92-3
Compliant Through Hole 453.59237 mg 10 ns Lead Free Bulk 10 ns 10 Ω
TRANSISTOR MOSFET P ZVP4105
MOSFET P-CH 50V 175MA E-LINE
MOSFETs P-Chnl 50V
Compliant Through Hole 453.59237 mg 10 ns Lead Free Bulk 10 ns 10 Ω
TRANSISTOR MOSFET P ZVP4105
MOSFET P-CH 50V 175MA E-LINE
MOSFETs P-Chnl 50V
The three parts on the right have similar specifications to ZVP4105ASTOB.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - Rated DCTechnologyTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageRoHS StatusLead FreeSubcategoryTerminal PositionConfigurationGate Charge (Qg) (Max) @ VgsDrain Current-Max (Abs) (ID)Number of PinsPbfree CodeResistanceThreshold VoltageFeedback Cap-Max (Crss)HeightLengthWidthREACH SVHCRadiation HardeningFactory Lead TimeView Compare
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ZVP4105ASTOBThrough HoleThrough HoleE-Line-3453.59237mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3Obsolete1 (Unlimited)3EAR99MATTE TIN-50VMOSFET (Metal Oxide)WIRE260unknown-175mA403R-PSIP-W3Not Qualified11625mW TaSingleENHANCEMENT MODE625mW10 nsP-ChannelSWITCHING10 Ω @ 100mA, 5V2V @ 1mA40pF @ 25V175mA Ta10ns50V5V±20V10 ns18 ns175mA20V-50VRoHS CompliantLead Free-----------------
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Surface MountSurface MountSOT-23-6-SILICON-55°C~150°C TJTape & Reel (TR)2012e3Obsolete1 (Unlimited)6EAR99Matte Tin (Sn)-250VMOSFET (Metal Oxide)GULL WING260--197mA306R-PDSO-G6Not Qualified1-1.1W Ta-ENHANCEMENT MODE1.1W-P-ChannelSWITCHING14 Ω @ 200mA, 10V2V @ 1mA73pF @ 25V197mA Ta3.78ns250V3.5V 10V±40V3.78 ns17.5 ns197mA40V-250VROHS3 CompliantLead FreeOther TransistorsDUALSINGLE WITH BUILT-IN DIODE3.45nC @ 10V0.197A-----------
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Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)453.59237mgSILICON-55°C~150°C TJBulk2012e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)-50VMOSFET (Metal Oxide)WIRE260--175mA403--11625mW TaSingleENHANCEMENT MODE625mW10 nsP-Channel-10 Ω @ 100mA, 5V2V @ 1mA40pF @ 25V175mA Ta10ns50V5V±20V10 ns18 ns170mA20V-ROHS3 CompliantLead FreeOther TransistorsBOTTOM---3yes10Ohm-2V6 pF4.01mm4.77mm2.41mmNo SVHCNo-
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Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)453.59237mgSILICON-55°C~150°C TJBulk2006e3Active1 (Unlimited)3EAR99Matte Tin (Sn)-240VMOSFET (Metal Oxide)WIRE260not_compliant-200mA403-Not Qualified11750mW TaSingleENHANCEMENT MODE750mW8 nsP-ChannelSWITCHING9 Ω @ 200mA, 10V2V @ 1mA200pF @ 25V200mA Ta8ns240V3.5V 10V±40V8 ns26 ns200mA40V-240VROHS3 CompliantLead Free-BOTTOM--0.2A3no9Ohm-1.4V-4.01mm4.77mm2.41mmNo SVHC-17 Weeks
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