ZVP4105ASTOB

Diodes Incorporated ZVP4105ASTOB

Part Number:
ZVP4105ASTOB
Manufacturer:
Diodes Incorporated
Ventron No:
2488756-ZVP4105ASTOB
Description:
MOSFET P-CH 50V 0.175A TO92-3
ECAD Model:
Datasheet:
ZVP4105ASTOB

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Specifications
Diodes Incorporated ZVP4105ASTOB technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVP4105ASTOB.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    E-Line-3
  • Weight
    453.59237mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2012
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    MATTE TIN
  • Voltage - Rated DC
    -50V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    WIRE
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    unknown
  • Current Rating
    -175mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • JESD-30 Code
    R-PSIP-W3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    625mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    625mW
  • Turn On Delay Time
    10 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    10 Ω @ 100mA, 5V
  • Vgs(th) (Max) @ Id
    2V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    40pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    175mA Ta
  • Rise Time
    10ns
  • Drain to Source Voltage (Vdss)
    50V
  • Drive Voltage (Max Rds On,Min Rds On)
    5V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    10 ns
  • Turn-Off Delay Time
    18 ns
  • Continuous Drain Current (ID)
    175mA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -50V
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
ZVP4105ASTOB Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 40pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 175mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -50V, and this device has a drainage-to-source breakdown voltage of -50VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 18 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 50V is required between drain and source (Vdss).Using drive voltage (5V), this device contributes to a reduction in overall power consumption.

ZVP4105ASTOB Features
a continuous drain current (ID) of 175mA
a drain-to-source breakdown voltage of -50V voltage
the turn-off delay time is 18 ns
a 50V drain to source voltage (Vdss)


ZVP4105ASTOB Applications
There are a lot of Diodes Incorporated
ZVP4105ASTOB applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
ZVP4105ASTOB More Descriptions
MOSFET P-CH 50V 0.175A TO92-3
Compliant Through Hole 453.59237 mg 10 ns Lead Free Bulk 10 ns 10 Ω
TRANSISTOR MOSFET P ZVP4105
MOSFET P-CH 50V 175MA E-LINE
MOSFETs P-Chnl 50V
Product Comparison
The three parts on the right have similar specifications to ZVP4105ASTOB.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    RoHS Status
    Lead Free
    Subcategory
    Terminal Position
    Configuration
    Gate Charge (Qg) (Max) @ Vgs
    Drain Current-Max (Abs) (ID)
    Number of Pins
    Pbfree Code
    Resistance
    Threshold Voltage
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Factory Lead Time
    View Compare
  • ZVP4105ASTOB
    ZVP4105ASTOB
    Through Hole
    Through Hole
    E-Line-3
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    MATTE TIN
    -50V
    MOSFET (Metal Oxide)
    WIRE
    260
    unknown
    -175mA
    40
    3
    R-PSIP-W3
    Not Qualified
    1
    1
    625mW Ta
    Single
    ENHANCEMENT MODE
    625mW
    10 ns
    P-Channel
    SWITCHING
    10 Ω @ 100mA, 5V
    2V @ 1mA
    40pF @ 25V
    175mA Ta
    10ns
    50V
    5V
    ±20V
    10 ns
    18 ns
    175mA
    20V
    -50V
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • ZVP4525E6TC
    Surface Mount
    Surface Mount
    SOT-23-6
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e3
    Obsolete
    1 (Unlimited)
    6
    EAR99
    Matte Tin (Sn)
    -250V
    MOSFET (Metal Oxide)
    GULL WING
    260
    -
    -197mA
    30
    6
    R-PDSO-G6
    Not Qualified
    1
    -
    1.1W Ta
    -
    ENHANCEMENT MODE
    1.1W
    -
    P-Channel
    SWITCHING
    14 Ω @ 200mA, 10V
    2V @ 1mA
    73pF @ 25V
    197mA Ta
    3.78ns
    250V
    3.5V 10V
    ±40V
    3.78 ns
    17.5 ns
    197mA
    40V
    -250V
    ROHS3 Compliant
    Lead Free
    Other Transistors
    DUAL
    SINGLE WITH BUILT-IN DIODE
    3.45nC @ 10V
    0.197A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • ZVP4105A
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Bulk
    2012
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    -50V
    MOSFET (Metal Oxide)
    WIRE
    260
    -
    -175mA
    40
    3
    -
    -
    1
    1
    625mW Ta
    Single
    ENHANCEMENT MODE
    625mW
    10 ns
    P-Channel
    -
    10 Ω @ 100mA, 5V
    2V @ 1mA
    40pF @ 25V
    175mA Ta
    10ns
    50V
    5V
    ±20V
    10 ns
    18 ns
    170mA
    20V
    -
    ROHS3 Compliant
    Lead Free
    Other Transistors
    BOTTOM
    -
    -
    -
    3
    yes
    10Ohm
    -2V
    6 pF
    4.01mm
    4.77mm
    2.41mm
    No SVHC
    No
    -
  • ZVP4424A
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Bulk
    2006
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    -240V
    MOSFET (Metal Oxide)
    WIRE
    260
    not_compliant
    -200mA
    40
    3
    -
    Not Qualified
    1
    1
    750mW Ta
    Single
    ENHANCEMENT MODE
    750mW
    8 ns
    P-Channel
    SWITCHING
    9 Ω @ 200mA, 10V
    2V @ 1mA
    200pF @ 25V
    200mA Ta
    8ns
    240V
    3.5V 10V
    ±40V
    8 ns
    26 ns
    200mA
    40V
    -240V
    ROHS3 Compliant
    Lead Free
    -
    BOTTOM
    -
    -
    0.2A
    3
    no
    9Ohm
    -1.4V
    -
    4.01mm
    4.77mm
    2.41mm
    No SVHC
    -
    17 Weeks
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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