Diodes Incorporated ZVP2106ASTZ
- Part Number:
- ZVP2106ASTZ
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2478764-ZVP2106ASTZ
- Description:
- MOSFET P-CH 60V 0.28A TO92-3
- Datasheet:
- ZVP2106ASTZ
Diodes Incorporated ZVP2106ASTZ technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVP2106ASTZ.
- Factory Lead Time17 Weeks
- MountSurface Mount, Through Hole
- Mounting TypeThrough Hole
- Package / CaseE-Line-3
- Number of Pins3
- Weight453.59237mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Box (TB)
- Published1997
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance5Ohm
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-60V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)260
- Current Rating-280mA
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max700mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation700mW
- Turn On Delay Time7 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs5 Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id3.5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds100pF @ 18V
- Current - Continuous Drain (Id) @ 25°C280mA Ta
- Rise Time15ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)15 ns
- Turn-Off Delay Time12 ns
- Continuous Drain Current (ID)280mA
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)0.28A
- Drain to Source Breakdown Voltage-60V
- Height4.01mm
- Length4.77mm
- Width2.41mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZVP2106ASTZ Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 100pF @ 18V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 280mA.With a drain-source breakdown voltage of -60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -60V.0.28A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 12 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (10V) reduces this device's overall power consumption.
ZVP2106ASTZ Features
a continuous drain current (ID) of 280mA
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 12 ns
a 60V drain to source voltage (Vdss)
ZVP2106ASTZ Applications
There are a lot of Diodes Incorporated
ZVP2106ASTZ applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 100pF @ 18V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 280mA.With a drain-source breakdown voltage of -60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -60V.0.28A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 12 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (10V) reduces this device's overall power consumption.
ZVP2106ASTZ Features
a continuous drain current (ID) of 280mA
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 12 ns
a 60V drain to source voltage (Vdss)
ZVP2106ASTZ Applications
There are a lot of Diodes Incorporated
ZVP2106ASTZ applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
ZVP2106ASTZ More Descriptions
ZVP2106A Series 60 V 280 mA P-Channel Enhancement Mode Vertical DMOS FET - TO-92
MOSFET P-Channel 60V 280mA (Tc) 700mW (Tc) Through Hole TO-92-3
Mosfet, P-Ch, 60V, 0.28A, E-Line Rohs Compliant: Yes |Diodes Inc. ZVP2106ASTZ
Trans MOSFET P-CH 60V 0.28A Automotive 3-Pin E-Line T/R
MOSFET P-Channel 60V 280mA (Tc) 700mW (Tc) Through Hole TO-92-3
Mosfet, P-Ch, 60V, 0.28A, E-Line Rohs Compliant: Yes |Diodes Inc. ZVP2106ASTZ
Trans MOSFET P-CH 60V 0.28A Automotive 3-Pin E-Line T/R
The three parts on the right have similar specifications to ZVP2106ASTZ.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeHTS CodeReach Compliance CodeJESD-30 CodeQualification StatusDrain-source On Resistance-MaxTerminal PositionFeedback Cap-Max (Crss)View Compare
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ZVP2106ASTZ17 WeeksSurface Mount, Through HoleThrough HoleE-Line-33453.59237mgSILICON-55°C~150°C TJTape & Box (TB)1997e3yesActive1 (Unlimited)3EAR995OhmMatte Tin (Sn)Other Transistors-60VMOSFET (Metal Oxide)WIRE260-280mA40311700mW TaSingleENHANCEMENT MODE700mW7 nsP-ChannelSWITCHING5 Ω @ 500mA, 10V3.5V @ 1mA100pF @ 18V280mA Ta15ns60V10V±20V15 ns12 ns280mA20V0.28A-60V4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead Free--------
-
-Through HoleThrough HoleE-Line-3--SILICON-55°C~150°C TJTape & Reel (TR)2012e3-Obsolete1 (Unlimited)3EAR99-MATTE TIN--200VMOSFET (Metal Oxide)WIRE260-120mA4031-700mW TaSingleENHANCEMENT MODE700mW-P-ChannelSWITCHING25 Ω @ 150mA, 10V3.5V @ 1mA100pF @ 25V120mA Ta15ns200V10V±20V15 ns12 ns120mA20V0.12A-200V-----RoHS CompliantLead Free8541.29.00.95unknownR-PSIP-W3Not Qualified---
-
-Through HoleThrough HoleE-Line-3-453.59237mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3-Obsolete1 (Unlimited)3EAR99-Matte Tin (Sn)--60VMOSFET (Metal Oxide)WIRE260-280mA40311700mW TaSingleENHANCEMENT MODE700mW7 nsP-ChannelSWITCHING5 Ω @ 500mA, 10V3.5V @ 1mA100pF @ 18V280mA Ta15ns60V10V±20V15 ns12 ns280mA20V0.28A------RoHS CompliantLead Free-unknownR-PSIP-W3Not Qualified5Ohm--
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-Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)-453.59237mgSILICON-55°C~150°C TJBulk2012--Obsolete1 (Unlimited)3EAR99--Other Transistors-200VMOSFET (Metal Oxide)WIRE--120mA-311700mW TaSingleENHANCEMENT MODE700mW7 nsP-Channel-25 Ω @ 150mA, 10V3.5V @ 1mA100pF @ 25V120mA Ta15ns200V10V±20V15 ns12 ns120mA20V--4.01mm4.77mm2.41mm--RoHS CompliantLead Free--O-PBCY-W3Not Qualified-BOTTOM7 pF
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