ZVP2106ASTZ

Diodes Incorporated ZVP2106ASTZ

Part Number:
ZVP2106ASTZ
Manufacturer:
Diodes Incorporated
Ventron No:
2478764-ZVP2106ASTZ
Description:
MOSFET P-CH 60V 0.28A TO92-3
ECAD Model:
Datasheet:
ZVP2106ASTZ

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Specifications
Diodes Incorporated ZVP2106ASTZ technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVP2106ASTZ.
  • Factory Lead Time
    17 Weeks
  • Mount
    Surface Mount, Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    E-Line-3
  • Number of Pins
    3
  • Weight
    453.59237mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Box (TB)
  • Published
    1997
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    5Ohm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -60V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    WIRE
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -280mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    700mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    700mW
  • Turn On Delay Time
    7 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    5 Ω @ 500mA, 10V
  • Vgs(th) (Max) @ Id
    3.5V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    100pF @ 18V
  • Current - Continuous Drain (Id) @ 25°C
    280mA Ta
  • Rise Time
    15ns
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    15 ns
  • Turn-Off Delay Time
    12 ns
  • Continuous Drain Current (ID)
    280mA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    0.28A
  • Drain to Source Breakdown Voltage
    -60V
  • Height
    4.01mm
  • Length
    4.77mm
  • Width
    2.41mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
ZVP2106ASTZ Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 100pF @ 18V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 280mA.With a drain-source breakdown voltage of -60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -60V.0.28A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 12 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (10V) reduces this device's overall power consumption.

ZVP2106ASTZ Features
a continuous drain current (ID) of 280mA
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 12 ns
a 60V drain to source voltage (Vdss)


ZVP2106ASTZ Applications
There are a lot of Diodes Incorporated
ZVP2106ASTZ applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
ZVP2106ASTZ More Descriptions
ZVP2106A Series 60 V 280 mA P-Channel Enhancement Mode Vertical DMOS FET - TO-92
MOSFET P-Channel 60V 280mA (Tc) 700mW (Tc) Through Hole TO-92-3
Mosfet, P-Ch, 60V, 0.28A, E-Line Rohs Compliant: Yes |Diodes Inc. ZVP2106ASTZ
Trans MOSFET P-CH 60V 0.28A Automotive 3-Pin E-Line T/R
Product Comparison
The three parts on the right have similar specifications to ZVP2106ASTZ.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    HTS Code
    Reach Compliance Code
    JESD-30 Code
    Qualification Status
    Drain-source On Resistance-Max
    Terminal Position
    Feedback Cap-Max (Crss)
    View Compare
  • ZVP2106ASTZ
    ZVP2106ASTZ
    17 Weeks
    Surface Mount, Through Hole
    Through Hole
    E-Line-3
    3
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Tape & Box (TB)
    1997
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    5Ohm
    Matte Tin (Sn)
    Other Transistors
    -60V
    MOSFET (Metal Oxide)
    WIRE
    260
    -280mA
    40
    3
    1
    1
    700mW Ta
    Single
    ENHANCEMENT MODE
    700mW
    7 ns
    P-Channel
    SWITCHING
    5 Ω @ 500mA, 10V
    3.5V @ 1mA
    100pF @ 18V
    280mA Ta
    15ns
    60V
    10V
    ±20V
    15 ns
    12 ns
    280mA
    20V
    0.28A
    -60V
    4.01mm
    4.77mm
    2.41mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • ZVP2120ASTOA
    -
    Through Hole
    Through Hole
    E-Line-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    MATTE TIN
    -
    -200V
    MOSFET (Metal Oxide)
    WIRE
    260
    -120mA
    40
    3
    1
    -
    700mW Ta
    Single
    ENHANCEMENT MODE
    700mW
    -
    P-Channel
    SWITCHING
    25 Ω @ 150mA, 10V
    3.5V @ 1mA
    100pF @ 25V
    120mA Ta
    15ns
    200V
    10V
    ±20V
    15 ns
    12 ns
    120mA
    20V
    0.12A
    -200V
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    8541.29.00.95
    unknown
    R-PSIP-W3
    Not Qualified
    -
    -
    -
  • ZVP2106ASTOB
    -
    Through Hole
    Through Hole
    E-Line-3
    -
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    Matte Tin (Sn)
    -
    -60V
    MOSFET (Metal Oxide)
    WIRE
    260
    -280mA
    40
    3
    1
    1
    700mW Ta
    Single
    ENHANCEMENT MODE
    700mW
    7 ns
    P-Channel
    SWITCHING
    5 Ω @ 500mA, 10V
    3.5V @ 1mA
    100pF @ 18V
    280mA Ta
    15ns
    60V
    10V
    ±20V
    15 ns
    12 ns
    280mA
    20V
    0.28A
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    -
    unknown
    R-PSIP-W3
    Not Qualified
    5Ohm
    -
    -
  • ZVP2120A
    -
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    -
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Bulk
    2012
    -
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    -
    Other Transistors
    -200V
    MOSFET (Metal Oxide)
    WIRE
    -
    -120mA
    -
    3
    1
    1
    700mW Ta
    Single
    ENHANCEMENT MODE
    700mW
    7 ns
    P-Channel
    -
    25 Ω @ 150mA, 10V
    3.5V @ 1mA
    100pF @ 25V
    120mA Ta
    15ns
    200V
    10V
    ±20V
    15 ns
    12 ns
    120mA
    20V
    -
    -
    4.01mm
    4.77mm
    2.41mm
    -
    -
    RoHS Compliant
    Lead Free
    -
    -
    O-PBCY-W3
    Not Qualified
    -
    BOTTOM
    7 pF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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