Diodes Incorporated ZVN2110GTA

Name: ZVN2110GTA
Brand: Diodes Incorporated
SKU: 2481674-ZVN2110GTA
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: ZVN2110GTA

Manufacturer:: Diodes Incorporated

Ventron No:: 2481674-ZVN2110GTA

Description:: MOSFET N-CH 100V 500MA SOT223

ECAD Model:

Datasheet:: ZVN2110GTA

Specifications

Diodes Incorporated ZVN2110GTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVN2110GTA.

Factory Lead Time
17 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2002
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Resistance
4Ohm
Additional Feature
FAST SWITCHING
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
500mA
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
4
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
2W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
Case Connection
DRAIN
Turn On Delay Time
4 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4 Ω @ 1A, 10V
Vgs(th) (Max) @ Id
2.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
75pF @ 25V
Current - Continuous Drain (Id) @ 25°C
500mA Ta
Rise Time
4ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
8 ns
Turn-Off Delay Time
8 ns
Continuous Drain Current (ID)
500mA
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
0.5A
Drain to Source Breakdown Voltage
100V
Pulsed Drain Current-Max (IDM)
6A
Height
1.65mm
Length
6.7mm
Width
3.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

ZVN2110GTA Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 75pF @ 25V.This device has a continuous drain current (ID) of [500mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.A device's drain current is its maximum continuous current, and this device's drain current is 0.5A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 8 ns.A maximum pulsed drain current of 6A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 4 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).

ZVN2110GTA Features
a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 8 ns
based on its rated peak drain current 6A.

ZVN2110GTA Applications
There are a lot of Diodes Incorporated
ZVN2110GTA applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

ZVN2110GTA More Descriptions

Trans MOSFET N-CH 100V 0.5A Automotive 4-Pin(3 Tab) SOT-223 T/R
ZVN2110G Series 100 V 4 Ohm N-Channel Enhancement Mode Vertical DMOS FET-SOT-223
MOSFET N-Channel 100V 0.5A SOT223 | Diodes Inc ZVN2110GTA
MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: N Variants: N-Channel, Enh. Power dissipation: 2 W

Product Comparison

The three parts on the right have similar specifications to ZVN2110GTA.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Additional Feature

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Terminal Finish

Reach Compliance Code

Qualification Status

Configuration

Drain-source On Resistance-Max

Number of Pins

Subcategory

Threshold Voltage

Feedback Cap-Max (Crss)

HTS Code

View Compare
ZVN2110GTA

Diodes Incorporated

17 Weeks

Tin

Surface Mount

Surface Mount

TO-261-4, TO-261AA

7.994566mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2002

e3

no

Active

1 (Unlimited)

4

EAR99

4Ohm

FAST SWITCHING

100V

MOSFET (Metal Oxide)

DUAL

GULL WING

260

500mA

40

4

R-PDSO-G4

1

1

2W Ta

Single

ENHANCEMENT MODE

2W

DRAIN

4 ns

N-Channel

SWITCHING

4 Ω @ 1A, 10V

2.4V @ 1mA

75pF @ 25V

500mA Ta

4ns

10V

±20V

8 ns

8 ns

500mA

20V

0.5A

100V

6A

1.65mm

6.7mm

3.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
ZVN2106GTC

Diodes Incorporated

-

-

Surface Mount

Surface Mount

TO-261-4, TO-261AA

7.994566mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2006

e3

-

Obsolete

1 (Unlimited)

4

EAR99

-

-

60V

MOSFET (Metal Oxide)

DUAL

GULL WING

260

710mA

40

4

R-PDSO-G4

1

1

2W Ta

-

ENHANCEMENT MODE

2W

DRAIN

7 ns

N-Channel

SWITCHING

2 Ω @ 1A, 10V

2.4V @ 1mA

75pF @ 18V

710mA Ta

8ns

10V

±20V

15 ns

12 ns

710mA

20V

-

60V

8A

1.65mm

6.7mm

3.7mm

-

-

RoHS Compliant

Lead Free

MATTE TIN

unknown

Not Qualified

SINGLE

2Ohm

-

-

-

-

-

ZVN2110GTA vs ZVN2106GTC
ZVN2110A

Diodes Incorporated

17 Weeks

-

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

453.59237mg

SILICON

-55°C~150°C TJ

Bulk

2012

e3

yes

Active

1 (Unlimited)

3

EAR99

4Ohm

-

100V

MOSFET (Metal Oxide)

-

WIRE

260

230mA

40

3

-

1

1

700mW Ta

Single

ENHANCEMENT MODE

700mW

-

7 ns

N-Channel

-

4 Ω @ 1A, 10V

2.4V @ 1mA

75pF @ 25V

320mA Ta

8ns

10V

±20V

8 ns

13 ns

320mA

20V

-

100V

-

4.01mm

4.77mm

2.41mm

No SVHC

No

ROHS3 Compliant

Lead Free

Matte Tin (Sn)

-

-

-

-

3

FET General Purpose Powers

2.4V

8 pF

-

ZVN2110GTA vs ZVN2110A
ZVN2535ASTOB

Diodes Incorporated

-

-

Through Hole

Through Hole

E-Line-3

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

-

-

Obsolete

1 (Unlimited)

3

EAR99

-

-

350V

MOSFET (Metal Oxide)

-

WIRE

-

90mA

-

3

R-PSIP-W3

1

-

700mW Ta

Single

ENHANCEMENT MODE

700mW

-

-

N-Channel

SWITCHING

35 Ω @ 100mA, 10V

3V @ 1mA

70pF @ 25V

90mA Ta

7ns

10V

±20V

7 ns

16 ns

90mA

20V

0.09A

350V

-

-

-

-

-

-

RoHS Compliant

Lead Free

-

unknown

Not Qualified

-

40Ohm

-

-

-

-

8541.29.00.95

ZVN2110GTA vs ZVN2535ASTOB