Diodes Incorporated ZVN2106GTA
- Part Number:
- ZVN2106GTA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2483507-ZVN2106GTA
- Description:
- MOSFET N-CH 60V 710MA SOT223
- Datasheet:
- ZVN2106GTA
Diodes Incorporated ZVN2106GTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVN2106GTA.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published1997
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance2Ohm
- Terminal FinishMatte Tin (Sn)
- Voltage - Rated DC60V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating710mA
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count4
- JESD-30 CodeR-PDSO-G4
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2W
- Case ConnectionDRAIN
- Turn On Delay Time7 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs2 Ω @ 1A, 10V
- Vgs(th) (Max) @ Id2.4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds75pF @ 18V
- Current - Continuous Drain (Id) @ 25°C710mA Ta
- Rise Time8ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)15 ns
- Turn-Off Delay Time12 ns
- Continuous Drain Current (ID)710mA
- Threshold Voltage2.4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage60V
- Pulsed Drain Current-Max (IDM)8A
- Dual Supply Voltage60V
- Nominal Vgs2.4 V
- Height1.65mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZVN2106GTA Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 75pF @ 18V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 710mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 12 ns.Peak drain current is 8A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 7 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 2.4V, which means that it will not activate any of its functions when its threshold voltage reaches 2.4V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
ZVN2106GTA Features
a continuous drain current (ID) of 710mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 12 ns
based on its rated peak drain current 8A.
a threshold voltage of 2.4V
ZVN2106GTA Applications
There are a lot of Diodes Incorporated
ZVN2106GTA applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 75pF @ 18V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 710mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 12 ns.Peak drain current is 8A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 7 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 2.4V, which means that it will not activate any of its functions when its threshold voltage reaches 2.4V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
ZVN2106GTA Features
a continuous drain current (ID) of 710mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 12 ns
based on its rated peak drain current 8A.
a threshold voltage of 2.4V
ZVN2106GTA Applications
There are a lot of Diodes Incorporated
ZVN2106GTA applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
ZVN2106GTA More Descriptions
Trans MOSFET N-CH 60V 0.71A Automotive 4-Pin(3 Tab) SOT-223 T/R
ZVN2106G Series 60 V 2 Ohm N-Channel Enhancement Mode Vertical DMOS FET- SOT-223
MOSFET N-Channel 60V 0.71A SOT223 | Diodes Inc ZVN2106GTA
MOSFET Operating temperature: -55... 150 °C Housing type: SOT-223 Polarity: N Variants: N-Channel, Enh. Power dissipation: 2 W
MOSFET, N SOT-223 REEL 1K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:0.7A; Resistance, Rds On:2ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.4V; Case Style:SOT-223; ;RoHS Compliant: Yes
ZVN2106G Series 60 V 2 Ohm N-Channel Enhancement Mode Vertical DMOS FET- SOT-223
MOSFET N-Channel 60V 0.71A SOT223 | Diodes Inc ZVN2106GTA
MOSFET Operating temperature: -55... 150 °C Housing type: SOT-223 Polarity: N Variants: N-Channel, Enh. Power dissipation: 2 W
MOSFET, N SOT-223 REEL 1K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:0.7A; Resistance, Rds On:2ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.4V; Case Style:SOT-223; ;RoHS Compliant: Yes
The three parts on the right have similar specifications to ZVN2106GTA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeReach Compliance CodeQualification StatusDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxSubcategoryFeedback Cap-Max (Crss)View Compare
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ZVN2106GTA17 WeeksSurface MountSurface MountTO-261-4, TO-261AA37.994566mgSILICON-55°C~150°C TJTape & Reel (TR)1997e3noActive1 (Unlimited)4SMD/SMTEAR992OhmMatte Tin (Sn)60VMOSFET (Metal Oxide)DUALGULL WING260710mA404R-PDSO-G4112W TaSingleENHANCEMENT MODE2WDRAIN7 nsN-ChannelSWITCHING2 Ω @ 1A, 10V2.4V @ 1mA75pF @ 18V710mA Ta8ns10V±20V15 ns12 ns710mA2.4V20V60V8A60V2.4 V1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free-------
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-Through HoleThrough HoleE-Line-3-453.59237mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3-Obsolete1 (Unlimited)3-EAR99-MATTE TIN100VMOSFET (Metal Oxide)-WIRE260230mA403R-PSIP-W311700mW TaSingleENHANCEMENT MODE700mW-7 nsN-ChannelSWITCHING4 Ω @ 1A, 10V2.4V @ 1mA75pF @ 25V320mA Ta8ns10V±20V8 ns13 ns320mA-20V100V--------RoHS CompliantLead FreeunknownNot Qualified0.32A4Ohm--
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-Through HoleThrough HoleE-Line-3-453.59237mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3-Obsolete1 (Unlimited)3-EAR99-MATTE TIN60VMOSFET (Metal Oxide)-WIRE260450mA403R-PSIP-W311700mW TaSingleENHANCEMENT MODE700mW--N-ChannelSWITCHING2 Ω @ 1A, 10V2.4V @ 1mA75pF @ 18V450mA Ta-10V±20V--450mA-20V60V--------RoHS CompliantLead FreeunknownNot Qualified0.45A2Ohm--
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17 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3453.59237mgSILICON-55°C~150°C TJBulk2006e3yesActive1 (Unlimited)3-EAR992OhmMatte Tin (Sn)60VMOSFET (Metal Oxide)BOTTOMWIRE260450mA403-11700mW TaSingleENHANCEMENT MODE700mW--N-Channel-2 Ω @ 1A, 10V2.4V @ 1mA75pF @ 18V450mA Ta-10V±20V--450mA2.4V20V60V---4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead Free--0.45A-FET General Purpose Powers20 pF
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