ZVN2106GTA

Diodes Incorporated ZVN2106GTA

Part Number:
ZVN2106GTA
Manufacturer:
Diodes Incorporated
Ventron No:
2483507-ZVN2106GTA
Description:
MOSFET N-CH 60V 710MA SOT223
ECAD Model:
Datasheet:
ZVN2106GTA

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Specifications
Diodes Incorporated ZVN2106GTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVN2106GTA.
  • Factory Lead Time
    17 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    1997
  • JESD-609 Code
    e3
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    2Ohm
  • Terminal Finish
    Matte Tin (Sn)
  • Voltage - Rated DC
    60V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    710mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    4
  • JESD-30 Code
    R-PDSO-G4
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    7 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    2 Ω @ 1A, 10V
  • Vgs(th) (Max) @ Id
    2.4V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    75pF @ 18V
  • Current - Continuous Drain (Id) @ 25°C
    710mA Ta
  • Rise Time
    8ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    15 ns
  • Turn-Off Delay Time
    12 ns
  • Continuous Drain Current (ID)
    710mA
  • Threshold Voltage
    2.4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    60V
  • Pulsed Drain Current-Max (IDM)
    8A
  • Dual Supply Voltage
    60V
  • Nominal Vgs
    2.4 V
  • Height
    1.65mm
  • Length
    6.7mm
  • Width
    3.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
ZVN2106GTA Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 75pF @ 18V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 710mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 12 ns.Peak drain current is 8A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 7 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 2.4V, which means that it will not activate any of its functions when its threshold voltage reaches 2.4V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

ZVN2106GTA Features
a continuous drain current (ID) of 710mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 12 ns
based on its rated peak drain current 8A.
a threshold voltage of 2.4V


ZVN2106GTA Applications
There are a lot of Diodes Incorporated
ZVN2106GTA applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
ZVN2106GTA More Descriptions
Trans MOSFET N-CH 60V 0.71A Automotive 4-Pin(3 Tab) SOT-223 T/R
ZVN2106G Series 60 V 2 Ohm N-Channel Enhancement Mode Vertical DMOS FET- SOT-223
MOSFET N-Channel 60V 0.71A SOT223 | Diodes Inc ZVN2106GTA
MOSFET Operating temperature: -55... 150 °C Housing type: SOT-223 Polarity: N Variants: N-Channel, Enh. Power dissipation: 2 W
MOSFET, N SOT-223 REEL 1K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:0.7A; Resistance, Rds On:2ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.4V; Case Style:SOT-223; ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to ZVN2106GTA.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Terminal Finish
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Reach Compliance Code
    Qualification Status
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Subcategory
    Feedback Cap-Max (Crss)
    View Compare
  • ZVN2106GTA
    ZVN2106GTA
    17 Weeks
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    1997
    e3
    no
    Active
    1 (Unlimited)
    4
    SMD/SMT
    EAR99
    2Ohm
    Matte Tin (Sn)
    60V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    710mA
    40
    4
    R-PDSO-G4
    1
    1
    2W Ta
    Single
    ENHANCEMENT MODE
    2W
    DRAIN
    7 ns
    N-Channel
    SWITCHING
    2 Ω @ 1A, 10V
    2.4V @ 1mA
    75pF @ 18V
    710mA Ta
    8ns
    10V
    ±20V
    15 ns
    12 ns
    710mA
    2.4V
    20V
    60V
    8A
    60V
    2.4 V
    1.65mm
    6.7mm
    3.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • ZVN2110ASTOA
    -
    Through Hole
    Through Hole
    E-Line-3
    -
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    -
    EAR99
    -
    MATTE TIN
    100V
    MOSFET (Metal Oxide)
    -
    WIRE
    260
    230mA
    40
    3
    R-PSIP-W3
    1
    1
    700mW Ta
    Single
    ENHANCEMENT MODE
    700mW
    -
    7 ns
    N-Channel
    SWITCHING
    4 Ω @ 1A, 10V
    2.4V @ 1mA
    75pF @ 25V
    320mA Ta
    8ns
    10V
    ±20V
    8 ns
    13 ns
    320mA
    -
    20V
    100V
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    unknown
    Not Qualified
    0.32A
    4Ohm
    -
    -
  • ZVN2106ASTOA
    -
    Through Hole
    Through Hole
    E-Line-3
    -
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    -
    EAR99
    -
    MATTE TIN
    60V
    MOSFET (Metal Oxide)
    -
    WIRE
    260
    450mA
    40
    3
    R-PSIP-W3
    1
    1
    700mW Ta
    Single
    ENHANCEMENT MODE
    700mW
    -
    -
    N-Channel
    SWITCHING
    2 Ω @ 1A, 10V
    2.4V @ 1mA
    75pF @ 18V
    450mA Ta
    -
    10V
    ±20V
    -
    -
    450mA
    -
    20V
    60V
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    unknown
    Not Qualified
    0.45A
    2Ohm
    -
    -
  • ZVN2106A
    17 Weeks
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    3
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Bulk
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    -
    EAR99
    2Ohm
    Matte Tin (Sn)
    60V
    MOSFET (Metal Oxide)
    BOTTOM
    WIRE
    260
    450mA
    40
    3
    -
    1
    1
    700mW Ta
    Single
    ENHANCEMENT MODE
    700mW
    -
    -
    N-Channel
    -
    2 Ω @ 1A, 10V
    2.4V @ 1mA
    75pF @ 18V
    450mA Ta
    -
    10V
    ±20V
    -
    -
    450mA
    2.4V
    20V
    60V
    -
    -
    -
    4.01mm
    4.77mm
    2.41mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    0.45A
    -
    FET General Purpose Powers
    20 pF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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