Vishay Siliconix TP0610K-T1-GE3

Name: TP0610K-T1-GE3
Brand: Vishay Siliconix
SKU: 2848731-TP0610K-T1-GE3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: TP0610K-T1-GE3

Manufacturer:: Vishay Siliconix

Ventron No:: 2848731-TP0610K-T1-GE3

Description:: MOSFET P-CH 60V 185MA TO-236

ECAD Model:

Datasheet:: TP0610K-T1-GE3

Specifications

Vishay Siliconix TP0610K-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix TP0610K-T1-GE3.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Supplier Device Package
SOT-23-3 (TO-236)
Weight
1.437803g
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2016
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
350mW Ta
Element Configuration
Single
Power Dissipation
350mW
Turn On Delay Time
20 ns
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
23pF @ 25V
Current - Continuous Drain (Id) @ 25°C
185mA Ta
Gate Charge (Qg) (Max) @ Vgs
1.7nC @ 15V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Turn-Off Delay Time
35 ns
Continuous Drain Current (ID)
-185mA
Threshold Voltage
-2V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-60V
Input Capacitance
155pF
Drain to Source Resistance
10Ohm
Rds On Max
190 mΩ
Nominal Vgs
-1 V
Height
1.02mm
Length
3.04mm
Width
1.4mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

TP0610K-T1-GE3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 23pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is -185mA amps.In this device, the drain-source breakdown voltage is -60V and VGS=-60V, so the drain-source breakdown voltage is -60V in this case.It is [35 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 10Ohm.A turn-on delay time of 20 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is -2V.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

TP0610K-T1-GE3 Features
a continuous drain current (ID) of -185mA
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 10Ohm
a threshold voltage of -2V
a 60V drain to source voltage (Vdss)

TP0610K-T1-GE3 Applications
There are a lot of Vishay Siliconix
TP0610K-T1-GE3 applications of single MOSFETs transistors.

Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies

TP0610K-T1-GE3 More Descriptions

VISHAY - TP0610K-T1-GE3 - MOSFET-Transistor, p-Kanal, -185 mA, -60 V, 10 ohm, -4.5 V, -2 V
Small Signal Field-Effect Transistor, 0.185A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
P Channel Mosfet, -60V, 185Ma, To-236, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:185Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:350Mw Rohs Compliant: No |Vishay TP0610K-T1-GE3.
MOSFET, P CH, 60V, 0.185A, SOT23; Transistor Polarity:P Channel; Drain Source Voltage Vds:-60V; On Resistance Rds(on):10ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:350mW; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-185mA; Power Dissipation Pd:350mW; Voltage Vgs Max:20V

Product Comparison

The three parts on the right have similar specifications to TP0610K-T1-GE3.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Technology

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Factory Lead Time

Transistor Element Material

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Terminal Position

Operating Mode

Transistor Application

Rise Time

Fall Time (Typ)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Feedback Cap-Max (Crss)

Pbfree Code

JESD-30 Code

View Compare
TP0610K-T1-GE3

Vishay Siliconix

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SOT-23-3 (TO-236)

1.437803g

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2016

Active

1 (Unlimited)

150°C

-55°C

MOSFET (Metal Oxide)

1

1

350mW Ta

Single

350mW

20 ns

P-Channel

6Ohm @ 500mA, 10V

3V @ 250μA

23pF @ 25V

185mA Ta

1.7nC @ 15V

60V

4.5V 10V

±20V

35 ns

-185mA

-2V

20V

-60V

155pF

10Ohm

190 mΩ

-1 V

1.02mm

3.04mm

1.4mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
TP0604N3-G

Microchip Technology

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

3

-

453.59237mg

-55°C~150°C TJ

Bulk

-

2012

Active

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

1

1

740mW Ta

Single

1W

5 ns

P-Channel

2 Ω @ 1A, 10V

2.4V @ 1mA

150pF @ 20V

430mA Tj

-

40V

5V 10V

±20V

10 ns

430mA

-

20V

-40V

-

-

-

-

5.33mm

5.21mm

4.19mm

-

No

ROHS3 Compliant

-

7 Weeks

SILICON

e3

3

EAR99

Matte Tin (Sn)

LOGIC LEVEL COMPATIBLE, LOW THRESHOLD

Other Transistors

BOTTOM

ENHANCEMENT MODE

SWITCHING

7ns

6 ns

0.75A

2Ohm

60 pF

-

-

TP0610K-T1-GE3 vs TP0604N3-G
TP0606N3-G-P003

Microchip Technology

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

3

-

453.59237mg

-55°C~150°C TJ

Tape & Reel (TR)

-

2011

Active

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

1

1

1W Tc

Single

-

10 ns

P-Channel

3.5 Ω @ 750mA, 10V

2.4V @ 1mA

150pF @ 25V

320mA Tj

-

60V

5V 10V

±20V

20 ns

320mA

-

20V

-60V

-

-

-

-

5.33mm

5.21mm

4.19mm

-

-

ROHS3 Compliant

-

6 Weeks

SILICON

-

3

-

-

-

-

BOTTOM

ENHANCEMENT MODE

SWITCHING

15ns

15 ns

-

-

-

yes

-

TP0610K-T1-GE3 vs TP0606N3-G-P003
TP0606N3-G-P002

Microchip Technology

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

-

-

453.59237mg

-55°C~150°C TJ

Tape & Reel (TR)

-

2011

Active

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

1

1

1W Tc

Single

-

10 ns

P-Channel

3.5 Ω @ 750mA, 10V

2.4V @ 1mA

150pF @ 25V

320mA Tj

-

60V

5V 10V

±20V

20 ns

320mA

-

20V

-60V

-

-

-

-

5.33mm

5.21mm

4.19mm

-

-

ROHS3 Compliant

-

6 Weeks

SILICON

-

3

-

-

-

-

BOTTOM

ENHANCEMENT MODE

SWITCHING

15ns

15 ns

0.32A

-

35 pF

yes

O-PBCY-T3

TP0610K-T1-GE3 vs TP0606N3-G-P002