STMicroelectronics TIP36CP
- Part Number:
- TIP36CP
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2847118-TIP36CP
- Description:
- TRANS PNP 100V 25A TO-3P
- Datasheet:
- TIP36CP
STMicroelectronics TIP36CP technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics TIP36CP.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-3P-3, SC-65-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingBulk
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Max Power Dissipation125W
- Base Part NumberTIP36
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Gain Bandwidth Product3MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current25A
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 15A 4V
- Current - Collector Cutoff (Max)1mA
- Vce Saturation (Max) @ Ib, Ic4V @ 5A, 25A
- Collector Emitter Breakdown Voltage100V
- Current - Collector (Ic) (Max)25A
- Transition Frequency3MHz
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
TIP36CP Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 10 @ 15A 4V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 4V @ 5A, 25A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 3MHz is present in the part.Collector current can be as low as 25A volts at its maximum.
TIP36CP Features
the DC current gain for this device is 10 @ 15A 4V
the vce saturation(Max) is 4V @ 5A, 25A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz
TIP36CP Applications
There are a lot of STMicroelectronics
TIP36CP applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 10 @ 15A 4V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 4V @ 5A, 25A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 3MHz is present in the part.Collector current can be as low as 25A volts at its maximum.
TIP36CP Features
the DC current gain for this device is 10 @ 15A 4V
the vce saturation(Max) is 4V @ 5A, 25A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz
TIP36CP Applications
There are a lot of STMicroelectronics
TIP36CP applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP36CP More Descriptions
Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 100V 25A 3-Pin(3 Tab) TO-3P Tube
Bipolar Transistors - BJT COMPLMNTRY PWR TRANS
COMPLEMENTARY HIGH POWER TRANSISTORS
Trans GP BJT PNP 100V 25A 3-Pin(3 Tab) TO-3P Tube
Bipolar Transistors - BJT COMPLMNTRY PWR TRANS
COMPLEMENTARY HIGH POWER TRANSISTORS
The three parts on the right have similar specifications to TIP36CP.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryMax Power DissipationBase Part NumberPin CountNumber of ElementsElement ConfigurationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCurrent - Collector (Ic) (Max)Transition FrequencyCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Radiation HardeningRoHS StatusVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Lifecycle StatusFactory Lead TimeSurface MountWeightPublishedJESD-609 CodeTerminal FinishVoltage - Rated DCPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Power DissipationCase ConnectionTransistor ApplicationJEDEC-95 CodeCollector Emitter Saturation VoltagehFE MinHeightLengthWidthLead FreeView Compare
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TIP36CPThrough HoleThrough HoleTO-3P-3, SC-65-33SILICON150°C TJBulkyesObsolete1 (Unlimited)3EAR99Other Transistors125WTIP3631Single3MHzPNPPNP100V25A10 @ 15A 4V1mA4V @ 5A, 25A100V25A3MHz100V5VNoROHS3 Compliant-------------------------------------
-
---------------------------------60V1.2V @ 375mA, 3ANPNTO-220AB-2WTubeTO-220-3150°C (TJ)Through Hole-10 @ 3A, 4V300µA3A----------------------
-
---------------------------------100V-PNPTO-218-125WBulkTO-218-3-65°C ~ 150°C (TJ)Through Hole3MHz10 @ 15A, 4V-25A----------------------
-
-Through HoleTO-220-33SILICON-65°C~150°C TJTubeyesActive1 (Unlimited)3EAR99Other Transistors2WTIP3131Single3MHzNPNNPN40V3A10 @ 3A 4V300μA1.2V @ 375mA, 3A40V-3MHz40V5VNoROHS3 Compliant--------------ACTIVE (Last Updated: 3 days ago)2 WeeksNO4.535924g2005e3Tin (Sn)40V2603A3MHz402WCOLLECTORSWITCHINGTO-220AB1.2V2515.748mm10.2616mm4.826mmLead Free
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