Central Semiconductor Corp TIP36B
- Part Number:
- TIP36B
- Manufacturer:
- Central Semiconductor Corp
- Ventron No:
- 2470663-TIP36B
- Description:
- TRANS GENERAL PURPOSE TO-218
- Datasheet:
- TIP36B
Central Semiconductor Corp TIP36B technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp TIP36B.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-218-3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingBulk
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- HTS Code8541.29.00.75
- SubcategoryOther Transistors
- Max Power Dissipation125W
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count2
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- Max Collector Current25A
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 15A 4V
- Collector Emitter Breakdown Voltage80V
- Current - Collector (Ic) (Max)25A
- Transition Frequency300MHz
- Frequency - Transition3MHz
- RoHS StatusNon-RoHS Compliant
TIP36B Overview
In this device, the DC current gain is 10 @ 15A 4V, which is the ratio between the base current and the collector current.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Single BJT transistor is possible for the collector current to fall as low as 25A volts at Single BJT transistors maximum.
TIP36B Features
the DC current gain for this device is 10 @ 15A 4V
a transition frequency of 300MHz
TIP36B Applications
There are a lot of Central Semiconductor Corp
TIP36B applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 10 @ 15A 4V, which is the ratio between the base current and the collector current.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Single BJT transistor is possible for the collector current to fall as low as 25A volts at Single BJT transistors maximum.
TIP36B Features
the DC current gain for this device is 10 @ 15A 4V
a transition frequency of 300MHz
TIP36B Applications
There are a lot of Central Semiconductor Corp
TIP36B applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP36B More Descriptions
Electronics TIP36B Transistor PNP Silicon Bvceo=80V IC=25A TO-247 Case For Purpose Power lifier And Switch
T-PNP SI- PWR AMPNTE Electronics
TRANS PNP 80V 25A TO218
T-PNP SI- PWR AMPNTE Electronics
TRANS PNP 80V 25A TO218
The three parts on the right have similar specifications to TIP36B.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationCase ConnectionTransistor ApplicationPolarity/Channel TypeTransistor TypeMax Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCollector Emitter Breakdown VoltageCurrent - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusSurface MountPower - MaxCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Voltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
-
TIP36BThrough HoleThrough HoleTO-218-3SILICON-65°C~150°C TJBulke0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)8541.29.00.75Other Transistors125WSINGLENOT SPECIFIEDnot_compliantNOT SPECIFIED2R-PSFM-T3Not Qualified1SINGLECOLLECTORSWITCHINGPNPPNP25A10 @ 15A 4V80V25A300MHz3MHzNon-RoHS Compliant---------------------
-
-Through HoleTO-220-3SILICON150°C TJTubee3yesObsolete1 (Unlimited)3-MATTE TIN---SINGLENOT APPLICABLE-NOT APPLICABLE3R-PSFM-T3COMMERCIAL1SINGLE-SWITCHINGNPNNPN-10 @ 3A 4V-3A3MHz3MHzROHS3 CompliantNO2W300μATO-220AB1.2V @ 375mA, 3A60V--------------
-
------------------------------------------60V1.2V @ 375mA, 3ANPNTO-220AB-2WTubeTO-220-3150°C (TJ)Through Hole-10 @ 3A, 4V300µA3A
-
------------------------------------------60V1.2V @ 375mA, 3ANPNTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole3MHz10 @ 3A, 4V300µA3A
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