Central Semiconductor Corp TIP34C
- Part Number:
- TIP34C
- Manufacturer:
- Central Semiconductor Corp
- Ventron No:
- 2470701-TIP34C
- Description:
- TRANS GENERAL PURPOSE TO-218
- Datasheet:
- TIP34C
Central Semiconductor Corp TIP34C technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp TIP34C.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Weight9.071847g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-140V
- Max Power Dissipation80W
- Current Rating-10A
- Frequency3MHz
- Base Part NumberTIP34
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation80W
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product3MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current10A
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 3A 4V
- Current - Collector Cutoff (Max)700μA
- Vce Saturation (Max) @ Ib, Ic4V @ 2.5A, 10A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency3MHz
- Collector Emitter Saturation Voltage4V
- Collector Base Voltage (VCBO)140V
- Emitter Base Voltage (VEBO)7V
- hFE Min20
- VCEsat-Max4 V
- Height20.15mm
- Length15.75mm
- Width5.15mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
TIP34C Overview
In this device, the DC current gain is 20 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 4V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 4V @ 2.5A, 10A.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -10A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.
TIP34C Features
the DC current gain for this device is 20 @ 3A 4V
a collector emitter saturation voltage of 4V
the vce saturation(Max) is 4V @ 2.5A, 10A
the emitter base voltage is kept at 7V
the current rating of this device is -10A
a transition frequency of 3MHz
TIP34C Applications
There are a lot of STMicroelectronics
TIP34C applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 20 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 4V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 4V @ 2.5A, 10A.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -10A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.
TIP34C Features
the DC current gain for this device is 20 @ 3A 4V
a collector emitter saturation voltage of 4V
the vce saturation(Max) is 4V @ 2.5A, 10A
the emitter base voltage is kept at 7V
the current rating of this device is -10A
a transition frequency of 3MHz
TIP34C Applications
There are a lot of STMicroelectronics
TIP34C applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP34C More Descriptions
Transistor PNP Silicon 100V IC=10amp TO-247 Case General Purpose Power AmplifierNTE Electronics
Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-247, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 100V 10A 80000mW 3-Pin(3 Tab) TO-247
Bipolar Transistor; Power Dissipation, Pd:80W; Package/Case:TO-218; Current Rating:10A; Voltage Rating:100V RoHS Compliant: Yes
BIPOLAR TRANSISTOR, PNP, -100V; Transist; BIPOLAR TRANSISTOR, PNP, -100V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency Typ ft:3MHz; Power Dissipation Pd:80W; DC Collector Current:-10A; DC Current Gain hFE:40
Bipolar Transistor, Pnp, -100V; Transistor Polarity:Pnp; Collector Emitter Voltage Max:100V; Continuous Collector Current:10A; Power Dissipation:80W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:3Mhz Rohs Compliant: Yes |Nte Electronics TIP34C
Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-247, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 100V 10A 80000mW 3-Pin(3 Tab) TO-247
Bipolar Transistor; Power Dissipation, Pd:80W; Package/Case:TO-218; Current Rating:10A; Voltage Rating:100V RoHS Compliant: Yes
BIPOLAR TRANSISTOR, PNP, -100V; Transist; BIPOLAR TRANSISTOR, PNP, -100V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency Typ ft:3MHz; Power Dissipation Pd:80W; DC Collector Current:-10A; DC Current Gain hFE:40
Bipolar Transistor, Pnp, -100V; Transistor Polarity:Pnp; Collector Emitter Voltage Max:100V; Continuous Collector Current:10A; Power Dissipation:80W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:3Mhz Rohs Compliant: Yes |Nte Electronics TIP34C
The three parts on the right have similar specifications to TIP34C.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinVCEsat-MaxHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackagePublishedMax Operating TemperatureMin Operating TemperaturePolarityPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Voltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
-
TIP34CThrough HoleThrough HoleTO-247-339.071847gSILICON150°C TJTubee3yesObsolete1 (Unlimited)3EAR99Tin (Sn)Other Transistors-140V80W-10A3MHzTIP3431Single80WSWITCHING3MHzPNPPNP100V10A20 @ 3A 4V700μA4V @ 2.5A, 10A100V3MHz4V140V7V204 V20.15mm15.75mm5.15mmNo SVHCNoROHS3 CompliantLead Free-----------------------
-
Through HoleThrough HoleTO-218-33---65°C~150°C TJTube--Obsolete1 (Unlimited)-----3.5W--TIP34-1-80W---PNP60V10A20 @ 3A 4V700μA4V @ 2.5A, 10A60V--100V5V-------ROHS3 Compliant-SOT-931993150°C-65°CPNP3.5W60V10A--------------
-
--------------------------------------------------------100V-PNPTO-218-125WBulkTO-218-3-65°C ~ 150°C (TJ)Through Hole3MHz10 @ 15A, 4V-25A
-
--------------------------------------------------------60V1.2V @ 375mA, 3ANPNTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole3MHz10 @ 3A, 4V300µA3A
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