ON Semiconductor TIP32G
- Part Number:
- TIP32G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2463211-TIP32G
- Description:
- TRANS PNP 40V 3A TO220AB
- Datasheet:
- TIP32G
ON Semiconductor TIP32G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor TIP32G.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time2 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2000
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-40V
- Max Power Dissipation2W
- Peak Reflow Temperature (Cel)260
- Current Rating1.4A
- Frequency3MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberTIP32
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product3MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 3A 4V
- Current - Collector Cutoff (Max)300μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic1.2V @ 375mA, 3A
- Collector Emitter Breakdown Voltage40V
- Transition Frequency3MHz
- Collector Emitter Saturation Voltage1.2V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)5V
- hFE Min25
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
TIP32G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10 @ 3A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.2V @ 375mA, 3A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1.4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 3MHz.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
TIP32G Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 1.4A
a transition frequency of 3MHz
TIP32G Applications
There are a lot of ON Semiconductor
TIP32G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10 @ 3A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.2V @ 375mA, 3A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1.4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 3MHz.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
TIP32G Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 1.4A
a transition frequency of 3MHz
TIP32G Applications
There are a lot of ON Semiconductor
TIP32G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP32G More Descriptions
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 40V 3A 2000mW 3-Pin(3 Tab) TO-220AB Tube
PNP Bipolar Power Transistor 40 V
TIP32G Series 40 V 3 A Complementary Silicon Plastic Power Transistor - TO-220AB
40V 40W 3A 10@3A4V 3MHz 1.2V@3A375mA PNP -65¡Í~ 150¡Í@(Tj) TO-220-3 Bipolar Transistors - BJT ROHS
Transistor Polarity:Pnp; Collector Emitter Voltage Max:40V; Continuous Collector Current:3A; Power Dissipation:2W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:3Mhz; Dc Current Gain Hfe Min:10Hfe; Msl:- Rohs Compliant: Yes |Onsemi TIP32G.
Trans GP BJT PNP 40V 3A 2000mW 3-Pin(3 Tab) TO-220AB Tube
PNP Bipolar Power Transistor 40 V
TIP32G Series 40 V 3 A Complementary Silicon Plastic Power Transistor - TO-220AB
40V 40W 3A 10@3A4V 3MHz 1.2V@3A375mA PNP -65¡Í~ 150¡Í@(Tj) TO-220-3 Bipolar Transistors - BJT ROHS
Transistor Polarity:Pnp; Collector Emitter Voltage Max:40V; Continuous Collector Current:3A; Power Dissipation:2W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:3Mhz; Dc Current Gain Hfe Min:10Hfe; Msl:- Rohs Compliant: Yes |Onsemi TIP32G.
The three parts on the right have similar specifications to TIP32G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRadiation HardeningRoHS StatusLead FreeTerminal PositionJESD-30 CodeQualification StatusConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Contact PlatingWeightHeightLengthWidthREACH SVHCView Compare
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TIP32GACTIVE (Last Updated: 3 days ago)2 WeeksThrough HoleTO-220-3NO3SILICON-65°C~150°C TJTube2000e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors-40V2W2601.4A3MHz40TIP3231Single2WCOLLECTORSWITCHING3MHzPNPPNP40V3A10 @ 3A 4V300μATO-220AB1.2V @ 375mA, 3A40V3MHz1.2V40V5V25NoROHS3 CompliantLead Free-----------------------------
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--Through HoleTO-220-3NO-SILICON150°C TJTube-e3yesObsolete1 (Unlimited)3-MATTE TIN---NOT APPLICABLE--NOT APPLICABLE-31---SWITCHING-NPNNPN--10 @ 3A 4V300μATO-220AB1.2V @ 375mA, 3A-3MHz-----ROHS3 Compliant-SINGLER-PSFM-T3COMMERCIALSINGLE2W60V3A3MHz--------------------
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---------------------------------------------------------100V700mV @ 125mA, 1APNPTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole3MHz15 @ 1A, 4V300µA1A------
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ACTIVE (Last Updated: 3 days ago)8 WeeksThrough HoleTO-220-3NO3SILICON-65°C~150°C TJTube2005e3yesActive1 (Unlimited)3EAR99-Other Transistors100V2W2603A3MHz40TIP3131Single2WCOLLECTORSWITCHING3MHzNPNNPN100V3A10 @ 3A 4V300μATO-220AB1.2V @ 375mA, 3A100V3MHz1.2V100V5V25NoROHS3 CompliantLead Free----------------------Tin4.535924g9.28mm10.28mm4.82mmNo SVHC
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