Fairchild/ON Semiconductor TIP32CTSTU
- Part Number:
- TIP32CTSTU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2468263-TIP32CTSTU
- Description:
- TRANS PNP 100V 3A TO-220
- Datasheet:
- TIP31/A/B/C TO220B03 Pkg Drawing
Fairchild/ON Semiconductor TIP32CTSTU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor TIP32CTSTU.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Supplier Device PackageTO-220-3
- Operating Temperature150°C TJ
- PackagingTube
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Base Part NumberTIP32
- Power - Max2W
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 3A 4V
- Current - Collector Cutoff (Max)200μA
- Vce Saturation (Max) @ Ib, Ic1.2V @ 375mA, 3A
- Voltage - Collector Emitter Breakdown (Max)100V
- Current - Collector (Ic) (Max)3A
- Frequency - Transition3MHz
TIP32CTSTU Overview
In this device, the DC current gain is 10 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.2V @ 375mA, 3A.Supplier device package TO-220-3 comes with the product.The device exhibits a collector-emitter breakdown at 100V.
TIP32CTSTU Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the supplier device package of TO-220-3
TIP32CTSTU Applications
There are a lot of ON Semiconductor
TIP32CTSTU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 10 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.2V @ 375mA, 3A.Supplier device package TO-220-3 comes with the product.The device exhibits a collector-emitter breakdown at 100V.
TIP32CTSTU Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the supplier device package of TO-220-3
TIP32CTSTU Applications
There are a lot of ON Semiconductor
TIP32CTSTU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP32CTSTU More Descriptions
TRANS PNP 100V 3A TO-220
Power Transistors PNP Epitaxial Sil
Power Transistors PNP Epitaxial Sil
The three parts on the right have similar specifications to TIP32CTSTU.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Base Part NumberPower - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Lifecycle StatusFactory Lead TimeContact PlatingSurface MountNumber of PinsWeightTransistor Element MaterialPublishedJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentJEDEC-95 CodeCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeView Compare
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TIP32CTSTUThrough HoleTO-220-3TO-220-3150°C TJTubeObsolete1 (Unlimited)TIP322WPNP10 @ 3A 4V200μA1.2V @ 375mA, 3A100V3A3MHz----------------------------------------------------------
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----------------100V-PNPTO-218-125WBulkTO-218-3-65°C ~ 150°C (TJ)Through Hole3MHz10 @ 15A, 4V-25A-------------------------------------------
-
----------------100V700mV @ 125mA, 1APNPTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole3MHz15 @ 1A, 4V300µA1A-------------------------------------------
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Through HoleTO-220-3--65°C~150°C TJTubeActive1 (Unlimited)TIP31-NPN10 @ 3A 4V300μA1.2V @ 375mA, 3A-----------------ACTIVE (Last Updated: 3 days ago)8 WeeksTinNO34.535924gSILICON2005e3yes3EAR99Other Transistors100V2W2603A3MHz4031Single2WCOLLECTORSWITCHING3MHzNPN100V3ATO-220AB100V3MHz1.2V100V5V259.28mm10.28mm4.82mmNo SVHCNoROHS3 CompliantLead Free
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