ON Semiconductor TIP32CG
- Part Number:
- TIP32CG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2463324-TIP32CG
- Description:
- TRANS PNP 100V 3A TO220AB
- Datasheet:
- TIP32CG
ON Semiconductor TIP32CG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor TIP32CG.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time6 Weeks
- Contact PlatingTin
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-100V
- Max Power Dissipation2W
- Peak Reflow Temperature (Cel)260
- Current Rating-3A
- Frequency3MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberTIP32
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product3MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 3A 4V
- Current - Collector Cutoff (Max)300μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic1.2V @ 375mA, 3A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency3MHz
- Collector Emitter Saturation Voltage1.2V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- hFE Min25
- Height9.28mm
- Length10.28mm
- Width4.82mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
TIP32CG Overview
This device has a DC current gain of 10 @ 3A 4V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.2V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -3A.In this part, there is a transition frequency of 3MHz.The maximum collector current is 3A volts.
TIP32CG Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
TIP32CG Applications
There are a lot of ON Semiconductor
TIP32CG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 10 @ 3A 4V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.2V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -3A.In this part, there is a transition frequency of 3MHz.The maximum collector current is 3A volts.
TIP32CG Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
TIP32CG Applications
There are a lot of ON Semiconductor
TIP32CG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP32CG More Descriptions
Bipolar junction transistor, PNP, 3 A, 100 V, THT, TO-220, TIP32CG
ON Semi TIP32CG PNP Bipolar Transistor, 3 A, 100 V, 3-Pin TO-220AB
TIP Series 100 V 3 A PNP Complementary Silicon Plastic Power Transistor TO-220AB
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 100V 3A 2000mW Automotive 3-Pin(3 Tab) TO-220AB Tube
100V 40W 3A 10@3A4V 3MHz 1.2V@3A375mA PNP -65¡Í~ 150¡Í@(Tj) TO-220-3 Bipolar Transistors - BJT ROHS
Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:100V; Dc Collector Current:3A; Power Dissipation Pd:40W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency Ft:3Mhz; Dc Current Gain Hfe:10Hfe; Msl:- Rohs Compliant: Yes |Onsemi TIP32CG.
ON Semi TIP32CG PNP Bipolar Transistor, 3 A, 100 V, 3-Pin TO-220AB
TIP Series 100 V 3 A PNP Complementary Silicon Plastic Power Transistor TO-220AB
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 100V 3A 2000mW Automotive 3-Pin(3 Tab) TO-220AB Tube
100V 40W 3A 10@3A4V 3MHz 1.2V@3A375mA PNP -65¡Í~ 150¡Í@(Tj) TO-220-3 Bipolar Transistors - BJT ROHS
Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:100V; Dc Collector Current:3A; Power Dissipation Pd:40W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency Ft:3Mhz; Dc Current Gain Hfe:10Hfe; Msl:- Rohs Compliant: Yes |Onsemi TIP32CG.
The three parts on the right have similar specifications to TIP32CG.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMountTerminal FinishMax Breakdown VoltageVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
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TIP32CGACTIVE (Last Updated: 3 days ago)6 WeeksTinThrough HoleTO-220-3NO34.535924gSILICON-65°C~150°C TJTube2005e3yesActive1 (Unlimited)3EAR99Other Transistors-100V2W260-3A3MHz40TIP3231Single2WCOLLECTORSWITCHING3MHzPNPPNP100V3A10 @ 3A 4V300μATO-220AB1.2V @ 375mA, 3A100V3MHz1.2V100V5V259.28mm10.28mm4.82mmNo SVHCNoROHS3 CompliantLead Free------------------
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LAST SHIPMENTS (Last Updated: 2 days ago)6 Weeks-Through HoleTO-220-3-31.214gSILICON150°C TJTube2013e3yesObsolete1 (Unlimited)3EAR99Other Transistors100V2W-3A3MHz-TIP31-1Single2W-SWITCHING3MHzNPNNPN100V3A10 @ 3A 4V300μATO-220AB1.2V @ 375mA, 3A100V3MHz-100V5V106.35mm6.35mm6.35mmNo SVHCNoRoHS CompliantLead FreeThrough HoleTin (Sn)100V--------------
-
---------------------------------------------------------100V-PNPTO-218-125WBulkTO-218-3-65°C ~ 150°C (TJ)Through Hole3MHz10 @ 15A, 4V-25A
-
ACTIVE (Last Updated: 3 days ago)2 Weeks-Through HoleTO-220-3NO34.535924gSILICON-65°C~150°C TJTube2005e3yesActive1 (Unlimited)3EAR99Other Transistors40V2W2603A3MHz40TIP3131Single2WCOLLECTORSWITCHING3MHzNPNNPN40V3A10 @ 3A 4V300μATO-220AB1.2V @ 375mA, 3A40V3MHz1.2V40V5V2515.748mm10.2616mm4.826mm-NoROHS3 CompliantLead Free-Tin (Sn)---------------
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