STMicroelectronics TIP32C

Name: TIP32C
Brand: STMicroelectronics
SKU: 2845211-TIP32C
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: TIP32C

Manufacturer:: STMicroelectronics

Ventron No:: 2845211-TIP32C

Description:: TRANS PNP 100V 3A TO-220

ECAD Model:

Datasheet:: TIP31/A/B/C TO220B03 Pkg Drawing

Specifications

STMicroelectronics TIP32C technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics TIP32C.

Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
2W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 3A 4V
Current - Collector Cutoff (Max)
300μA
Vce Saturation (Max) @ Ib, Ic
1.2V @ 375mA, 3A
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
3A
Frequency - Transition
3MHz
RoHS Status
Non-RoHS Compliant

Description

TIP32C Overview
In this device, the DC current gain is 10 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.2V @ 375mA, 3A.Supplier device package TO-220AB comes with the product.The device exhibits a collector-emitter breakdown at 100V.

TIP32C Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the supplier device package of TO-220AB

TIP32C Applications
There are a lot of Rochester Electronics, LLC
TIP32C applications of single BJT transistors.

Inverter
Interface
Driver
Muting

TIP32C More Descriptions

100V 2W 10@3A,4V 3A PNP TO-220AB-3 Bipolar Transistors - BJT ROHS
Trans GP BJT PNP 100V 3A 2000mW 3-Pin(3 Tab) TO-220AB Tube
TIP32C Series 100 V 3 A PNP Through Hole Power Transistor - TO-220
ST.MICROCONDUCTOR - TRANSISTOR, PNP TO-220 B IPOLAR 100V 3A 40W
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor; Power; PNP; VCB=-100V; IC=-3A; PD=40W; TO-220 Pkg
Power Bipolar, PNP, 4V, 375mA, TO-220, TubeSTMicroelectronics SCT
Power Transistor, TO-220AB, PNP, 100V
TRANSISTOR, PNP, TO-220; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -100V; Transition Frequency ft: -; Power Dissipation Pd: 40W; DC Collector Current: -3A; DC Current Gain hFE: 50hFE; Transistor Case Style:

Product Comparison

The three parts on the right have similar specifications to TIP32C.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Power - Max

Transistor Type

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

RoHS Status

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

Lifecycle Status

Factory Lead Time

Contact Plating

Surface Mount

Number of Pins

Weight

Transistor Element Material

Published

JESD-609 Code

Pbfree Code

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

JEDEC-95 Code

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

View Compare
TIP32C

STMicroelectronics

Through Hole

TO-220-3

TO-220AB

-65°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

2W

PNP

10 @ 3A 4V

300μA

1.2V @ 375mA, 3A

100V

3A

3MHz

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
TIP36C

Central Semiconductor Corp

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

100V

-

PNP

TO-218

-

125W

Bulk

TO-218-3

-65°C ~ 150°C (TJ)

Through Hole

3MHz

10 @ 15A, 4V

-

25A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

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-

-

-

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-

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-

-

-

-

-

-

-

-

-

-

-

-

-

TIP32C vs TIP36C
TIP31CG

ON Semiconductor

Through Hole

TO-220-3

-

-65°C~150°C TJ

Tube

Active

1 (Unlimited)

-

NPN

10 @ 3A 4V

300μA

1.2V @ 375mA, 3A

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ACTIVE (Last Updated: 3 days ago)

8 Weeks

Tin

NO

3

4.535924g

SILICON

2005

e3

yes

3

EAR99

Other Transistors

100V

2W

260

3A

3MHz

40

TIP31

3

1

Single

2W

COLLECTOR

SWITCHING

3MHz

NPN

100V

3A

TO-220AB

100V

3MHz

1.2V

100V

5V

25

9.28mm

10.28mm

4.82mm

No SVHC

No

Lead Free

TIP32C vs TIP31CG
TIP31A

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

60V

1.2V @ 375mA, 3A

NPN

TO-220AB

-

2W

Tube

TO-220-3

-65°C ~ 150°C (TJ)

Through Hole

3MHz

10 @ 3A, 4V

300µA

3A

-

-

-

-

-

-

-

-

-

-

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-

TIP32C vs TIP31A