Fairchild/ON Semiconductor TIP32BTU
- Part Number:
- TIP32BTU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2468319-TIP32BTU
- Description:
- TRANS PNP 80V 3A TO-220
- Datasheet:
- TIP31/A/B/C TO220B03 Pkg Drawing
Fairchild/ON Semiconductor TIP32BTU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor TIP32BTU.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT APPLICABLE
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT APPLICABLE
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max2W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 3A 4V
- Current - Collector Cutoff (Max)200μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic1.2V @ 375mA, 3A
- Voltage - Collector Emitter Breakdown (Max)80V
- Current - Collector (Ic) (Max)3A
- Transition Frequency3MHz
- Frequency - Transition3MHz
- RoHS StatusROHS3 Compliant
TIP32BTU Overview
In this device, the DC current gain is 10 @ 3A 4V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 375mA, 3A.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.There is a 80V maximal voltage in the device due to collector-emitter breakdown.
TIP32BTU Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
a transition frequency of 3MHz
TIP32BTU Applications
There are a lot of Rochester Electronics, LLC
TIP32BTU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 10 @ 3A 4V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 375mA, 3A.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.There is a 80V maximal voltage in the device due to collector-emitter breakdown.
TIP32BTU Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
a transition frequency of 3MHz
TIP32BTU Applications
There are a lot of Rochester Electronics, LLC
TIP32BTU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP32BTU More Descriptions
Bipolar (BJT) Transistor PNP 80V 3A 3MHz 2W Through Hole TO-220-3
Trans GP BJT PNP 80V 3A 3-Pin(3 Tab) TO-220 Rail
Bipolar Transistors - BJT PNP Epitaxial Sil
Trans GP BJT PNP 80V 3A 3-Pin(3 Tab) TO-220 Rail
Bipolar Transistors - BJT PNP Epitaxial Sil
The three parts on the right have similar specifications to TIP32BTU.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusMountNumber of PinsSupplier Device PackagePublishedMax Operating TemperatureMin Operating TemperatureMax Power DissipationBase Part NumberPolarityPower DissipationCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Lifecycle StatusFactory Lead TimeWeightECCN CodeSubcategoryVoltage - Rated DCCurrent RatingFrequencyElement ConfigurationGain Bandwidth ProductMax Breakdown VoltagehFE MinHeightLengthWidthREACH SVHCRadiation HardeningLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
-
TIP32BTUThrough HoleTO-220-3NOSILICON150°C TJTubee3yesObsolete1 (Unlimited)3MATTE TINSINGLENOT APPLICABLEunknownNOT APPLICABLE3R-PSFM-T3COMMERCIAL1SINGLE2WSWITCHINGPNPPNP10 @ 3A 4V200μATO-220AB1.2V @ 375mA, 3A80V3A3MHz3MHzROHS3 Compliant------------------------------------------------
-
Through HoleTO-218-3---65°C~150°C TJTube--Obsolete1 (Unlimited)---------1-3.5W--PNP20 @ 3A 4V700μA-4V @ 2.5A, 10A60V10A--ROHS3 CompliantThrough Hole3SOT-931993150°C-65°C3.5WTIP34PNP80W60V10A60V100V5V--------------------------------
-
Through HoleTO-220-3-SILICON150°C TJTubee3yesObsolete1 (Unlimited)3Tin (Sn)-------1--SWITCHINGNPNNPN10 @ 3A 4V300μATO-220AB1.2V @ 375mA, 3A--3MHz-RoHS CompliantThrough Hole3-2013--2WTIP31-2W100V3A100V100V5VLAST SHIPMENTS (Last Updated: 2 days ago)6 Weeks1.214gEAR99Other Transistors100V3A3MHzSingle3MHz100V106.35mm6.35mm6.35mmNo SVHCNoLead Free--------------
-
-------------------------------------------------------------------100V700mV @ 125mA, 1APNPTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole3MHz15 @ 1A, 4V300µA1A
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