Micro Commercial Co TIP32A-BP
- Part Number:
- TIP32A-BP
- Manufacturer:
- Micro Commercial Co
- Ventron No:
- 2845880-TIP32A-BP
- Description:
- TRANS PNP 60V 3A TO-220
- Datasheet:
- TIP32A-BP
Micro Commercial Co TIP32A-BP technical specifications, attributes, parameters and parts with similar specifications to Micro Commercial Co TIP32A-BP.
- Factory Lead Time12 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberTIP32
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power - Max2W
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 3A 4V
- Current - Collector Cutoff (Max)300μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic1.2V @ 375mA, 3A
- Voltage - Collector Emitter Breakdown (Max)60V
- Current - Collector (Ic) (Max)3A
- Transition Frequency3MHz
- Frequency - Transition3MHz
- RoHS StatusROHS3 Compliant
TIP32A-BP Overview
This device has a DC current gain of 10 @ 3A 4V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 3MHz.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.
TIP32A-BP Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
a transition frequency of 3MHz
TIP32A-BP Applications
There are a lot of Micro Commercial Co
TIP32A-BP applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 10 @ 3A 4V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 3MHz.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.
TIP32A-BP Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
a transition frequency of 3MHz
TIP32A-BP Applications
There are a lot of Micro Commercial Co
TIP32A-BP applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP32A-BP More Descriptions
TRANS PNP 60V 3A TO220AB
The three parts on the right have similar specifications to TIP32A-BP.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Lifecycle StatusContact PlatingNumber of PinsWeightSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningLead FreeView Compare
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TIP32A-BP12 WeeksThrough HoleTO-220-3NOSILICON150°C TJTube2007e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)SINGLENOT SPECIFIEDNOT SPECIFIEDTIP323R-PSFM-T3Not Qualified1SINGLE2WPNPPNP10 @ 3A 4V300μATO-220AB1.2V @ 375mA, 3A60V3A3MHz3MHzROHS3 Compliant------------------------------------------
-
------------------------------------60V1.2V @ 375mA, 3ANPNTO-220AB-2WTubeTO-220-3150°C (TJ)Through Hole-10 @ 3A, 4V300µA3A---------------------------
-
8 WeeksThrough HoleTO-220-3NOSILICON-65°C~150°C TJTube2005e3yesActive1 (Unlimited)3EAR99--26040TIP313--1--NPNNPN10 @ 3A 4V300μATO-220AB1.2V @ 375mA, 3A--3MHz-ROHS3 Compliant--------------ACTIVE (Last Updated: 3 days ago)Tin34.535924gOther Transistors100V2W3A3MHzSingle2WCOLLECTORSWITCHING3MHz100V3A100V1.2V100V5V259.28mm10.28mm4.82mmNo SVHCNoLead Free
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------------------------------------60V1.2V @ 375mA, 3ANPNTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole3MHz10 @ 3A, 4V300µA3A---------------------------
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