Fairchild/ON Semiconductor TIP32
- Part Number:
- TIP32
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3068808-TIP32
- Description:
- TRANS PNP 40V 3A TO-220
- Datasheet:
- TIP31/A/B/C TO220B03 Pkg Drawing
Fairchild/ON Semiconductor TIP32 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor TIP32.
- Factory Lead Time6 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220-3
- Weight1.214g
- Operating Temperature150°C TJ
- PackagingBulk
- Published2009
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- Voltage - Rated DC-40V
- Max Power Dissipation2W
- Current Rating3A
- Frequency3MHz
- Base Part NumberTIP32
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation40W
- Power - Max2W
- Gain Bandwidth Product3MHz
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 3A 4V
- Current - Collector Cutoff (Max)300μA
- Vce Saturation (Max) @ Ib, Ic1.2V @ 375mA, 3A
- Collector Emitter Breakdown Voltage40V
- Voltage - Collector Emitter Breakdown (Max)40V
- Current - Collector (Ic) (Max)3A
- Max Frequency3MHz
- Collector Emitter Saturation Voltage1.2V
- Max Breakdown Voltage40V
- Frequency - Transition3MHz
- Collector Base Voltage (VCBO)-40V
- Emitter Base Voltage (VEBO)-5V
- hFE Min10
- Height6.35mm
- Length31.75mm
- Width6.35mm
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
TIP32 Description
TIP32 belongs to the family of complementary silicon plastic power transistors manufactured by ON Semiconductor for use in general-purpose amplifier and switching applications. Fast switching times and extremely low saturation voltages reduce switching and conduction losses.
TIP32 Features
Pb-free
Fast switching times
Extremely low saturation voltages
High current gain-bandwidth product
Assembled in the compact TO?220 package
TIP32 Applications
Industrial
General-purpose amplifier and switching applications
TIP32 belongs to the family of complementary silicon plastic power transistors manufactured by ON Semiconductor for use in general-purpose amplifier and switching applications. Fast switching times and extremely low saturation voltages reduce switching and conduction losses.
TIP32 Features
Pb-free
Fast switching times
Extremely low saturation voltages
High current gain-bandwidth product
Assembled in the compact TO?220 package
TIP32 Applications
Industrial
General-purpose amplifier and switching applications
TIP32 More Descriptions
TIP Series PNP 40 W 40 V 3 A Flange Mount Epitaxial Silicon Transistor- TO-220-3
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 40V 3A 3-Pin(3 Tab) TO-220 Bulk - Bulk
Bipolar Transistor; Power Dissipation, Pd:40W; Package/Case:TO-220; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:3A; Voltage Rating:-40V ;RoHS Compliant: Yes
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 40V 3A 3-Pin(3 Tab) TO-220 Bulk - Bulk
Bipolar Transistor; Power Dissipation, Pd:40W; Package/Case:TO-220; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:3A; Voltage Rating:-40V ;RoHS Compliant: Yes
The three parts on the right have similar specifications to TIP32.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberNumber of ElementsPolarityElement ConfigurationPower DissipationPower - MaxGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthRadiation HardeningRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
-
TIP326 WeeksThrough HoleThrough HoleTO-220-33TO-220-31.214g150°C TJBulk2009Obsolete1 (Unlimited)150°C-65°C-40V2W3A3MHzTIP321PNPSingle40W2W3MHzPNP40V3A10 @ 3A 4V300μA1.2V @ 375mA, 3A40V40V3A3MHz1.2V40V3MHz-40V-5V106.35mm31.75mm6.35mmNoRoHS CompliantLead Free---------------
-
-Through HoleThrough HoleTO-218-33SOT-93--65°C~150°C TJTube1993Obsolete1 (Unlimited)150°C-65°C-3.5W--TIP341PNP-80W3.5W-PNP60V10A20 @ 3A 4V700μA4V @ 2.5A, 10A60V60V10A----100V5V-----ROHS3 Compliant---------------
-
-----------------------------------------------100V700mV @ 125mA, 1APNPTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole3MHz15 @ 1A, 4V300µA1A
-
-----------------------------------------------60V1.2V @ 375mA, 3ANPNTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole3MHz10 @ 3A, 4V300µA3A
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