Bourns Inc. TIP31F-S
- Part Number:
- TIP31F-S
- Manufacturer:
- Bourns Inc.
- Ventron No:
- 2469480-TIP31F-S
- Description:
- TRANS NPN 160V 3A
- Datasheet:
- TIP31F-S
Bourns Inc. TIP31F-S technical specifications, attributes, parameters and parts with similar specifications to Bourns Inc. TIP31F-S.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220
- PackagingTube
- Published1993
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- Max Power Dissipation2W
- Base Part NumberTIP31
- PolarityNPN
- Power - Max2W
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)2.5V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 1A 4V
- Current - Collector Cutoff (Max)300μA
- Vce Saturation (Max) @ Ib, Ic2.5V @ 750MA, 3A
- Collector Emitter Breakdown Voltage160V
- Voltage - Collector Emitter Breakdown (Max)160V
- Current - Collector (Ic) (Max)3A
- Collector Base Voltage (VCBO)200V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
TIP31F-S Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25 @ 1A 4V.When VCE saturation is 2.5V @ 750MA, 3A, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-220 contains the product.The device has a 160V maximal voltage - Collector Emitter Breakdown.A maximum collector current of 3A volts can be achieved.
TIP31F-S Features
the DC current gain for this device is 25 @ 1A 4V
the vce saturation(Max) is 2.5V @ 750MA, 3A
the supplier device package of TO-220
TIP31F-S Applications
There are a lot of Bourns Inc.
TIP31F-S applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25 @ 1A 4V.When VCE saturation is 2.5V @ 750MA, 3A, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-220 contains the product.The device has a 160V maximal voltage - Collector Emitter Breakdown.A maximum collector current of 3A volts can be achieved.
TIP31F-S Features
the DC current gain for this device is 25 @ 1A 4V
the vce saturation(Max) is 2.5V @ 750MA, 3A
the supplier device package of TO-220
TIP31F-S Applications
There are a lot of Bourns Inc.
TIP31F-S applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP31F-S More Descriptions
TRANS GP BJT NPN 160V 3A 3PIN TO-220
NPN TRANSISTOR 160V 3A
NPN TRANSISTOR 160V 3A
The three parts on the right have similar specifications to TIP31F-S.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackagePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureMax Power DissipationBase Part NumberPolarityPower - MaxTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Collector Base Voltage (VCBO)Radiation HardeningRoHS StatusSurface MountTransistor Element MaterialOperating TemperatureJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationTransistor ApplicationPolarity/Channel TypeJEDEC-95 CodeTransition FrequencyFrequency - TransitionVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Lifecycle StatusFactory Lead TimeContact PlatingWeightECCN CodeSubcategoryVoltage - Rated DCCurrent RatingFrequencyElement ConfigurationPower DissipationCase ConnectionGain Bandwidth ProductCollector Emitter Saturation VoltageEmitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCLead FreeView Compare
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TIP31F-SThrough HoleThrough HoleTO-220-33TO-220Tube1993Obsolete1 (Unlimited)150°C-65°C2WTIP31NPN2WNPN2.5V3A25 @ 1A 4V300μA2.5V @ 750MA, 3A160V160V3A200VNoROHS3 Compliant--------------------------------------------------------
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-Through HoleTO-220-3--Tube-Obsolete1 (Unlimited)-----2WNPN--10 @ 3A 4V300μA1.2V @ 375mA, 3A-60V3A--ROHS3 CompliantNOSILICON150°C TJe3yes3MATTE TINSINGLENOT APPLICABLENOT APPLICABLE3R-PSFM-T3COMMERCIAL1SINGLESWITCHINGNPNTO-220AB3MHz3MHz-----------------------------------
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-----------------------------------------------100V700mV @ 125mA, 1APNPTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole3MHz15 @ 1A, 4V300µA1A---------------------
-
-Through HoleTO-220-33-Tube2005Active1 (Unlimited)--2WTIP31--NPN100V3A10 @ 3A 4V300μA1.2V @ 375mA, 3A100V--100VNoROHS3 CompliantNOSILICON-65°C~150°C TJe3yes3--260403--1-SWITCHINGNPNTO-220AB3MHz---------------ACTIVE (Last Updated: 3 days ago)8 WeeksTin4.535924gEAR99Other Transistors100V3A3MHzSingle2WCOLLECTOR3MHz1.2V5V259.28mm10.28mm4.82mmNo SVHCLead Free
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