ON Semiconductor TIP31BG
- Part Number:
- TIP31BG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2846092-TIP31BG
- Description:
- TRANS NPN 80V 3A TO220AB
- Datasheet:
- TIP31BG
ON Semiconductor TIP31BG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor TIP31BG.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time2 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2001
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC80V
- Max Power Dissipation40W
- Peak Reflow Temperature (Cel)260
- Current Rating3A
- Frequency3MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberTIP31
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product3MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 3A 4V
- Current - Collector Cutoff (Max)300μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic1.2V @ 375mA, 3A
- Collector Emitter Breakdown Voltage80V
- Transition Frequency3MHz
- Collector Emitter Saturation Voltage1.2V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)5V
- hFE Min25
- Height15.748mm
- Length10.2616mm
- Width4.826mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
TIP31BG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 375mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 3MHz.During maximum operation, collector current can be as low as 3A volts.
TIP31BG Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
TIP31BG Applications
There are a lot of ON Semiconductor
TIP31BG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 375mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 3MHz.During maximum operation, collector current can be as low as 3A volts.
TIP31BG Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
TIP31BG Applications
There are a lot of ON Semiconductor
TIP31BG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP31BG More Descriptions
TIP Series 80 V 3 A NPN Complementary Silicon Plastic Power Transistor TO-220AB
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 80V 3A 2000mW 3-Pin(3 Tab) TO-220AB Tube
TRANSISTOR, NPN, 80V, 3A, TO-220AB; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 40W; DC Collector Current: 3A; DC Current Gain hFE: 10hFE; Transistor
80V 40W 3A 10@3A4V 3MHz 1.2V@3A375mA NPN -65¡Í~ 150¡Í@(Tj) TO-220-3 Bipolar Transistors - BJT ROHS
POWER TRANSISTOR, NPN, 80V, 3MHZ, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:3A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:-; MSL:-RoHS Compliant: Yes
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 80V 3A 2000mW 3-Pin(3 Tab) TO-220AB Tube
TRANSISTOR, NPN, 80V, 3A, TO-220AB; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 40W; DC Collector Current: 3A; DC Current Gain hFE: 10hFE; Transistor
80V 40W 3A 10@3A4V 3MHz 1.2V@3A375mA NPN -65¡Í~ 150¡Í@(Tj) TO-220-3 Bipolar Transistors - BJT ROHS
POWER TRANSISTOR, NPN, 80V, 3MHZ, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:3A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:-; MSL:-RoHS Compliant: Yes
The three parts on the right have similar specifications to TIP31BG.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Contact PlatingView Compare
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TIP31BGACTIVE (Last Updated: 3 days ago)2 WeeksThrough HoleTO-220-3NO34.535924gSILICON-65°C~150°C TJTube2001e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors80V40W2603A3MHz40TIP3131Single2WCOLLECTORSWITCHING3MHzNPNNPN80V3A10 @ 3A 4V300μATO-220AB1.2V @ 375mA, 3A80V3MHz1.2V80V5V2515.748mm10.2616mm4.826mmNo SVHCNoROHS3 CompliantLead Free----------------
-
------------------------------------------------------100V-PNPTO-218-125WBulkTO-218-3-65°C ~ 150°C (TJ)Through Hole3MHz10 @ 15A, 4V-25A-
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ACTIVE (Last Updated: 3 days ago)8 WeeksThrough HoleTO-220-3NO34.535924gSILICON-65°C~150°C TJTube2005e3yesActive1 (Unlimited)3EAR99-Other Transistors100V2W2603A3MHz40TIP3131Single2WCOLLECTORSWITCHING3MHzNPNNPN100V3A10 @ 3A 4V300μATO-220AB1.2V @ 375mA, 3A100V3MHz1.2V100V5V259.28mm10.28mm4.82mmNo SVHCNoROHS3 CompliantLead Free--------------Tin
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------------------------------------------------------60V1.2V @ 375mA, 3ANPNTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole3MHz10 @ 3A, 4V300µA3A-
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