Fairchild/ON Semiconductor TIP30CTU
- Part Number:
- TIP30CTU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2845286-TIP30CTU
- Description:
- TRANS PNP 100V 1A TO-220
- Datasheet:
- TO220B03 Pkg Drawing TIP29,30 A,B,C
Fairchild/ON Semiconductor TIP30CTU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor TIP30CTU.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
- Factory Lead Time36 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight1.214012g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- Published2004
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-100V
- Max Power Dissipation2W
- Current Rating-1A
- Frequency3MHz
- Base Part NumberTIP30
- Number of Elements1
- Voltage100V
- Element ConfigurationSingle
- Current1A
- Power Dissipation2W
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product3MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 1A 4V
- Current - Collector Cutoff (Max)300μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic700mV @ 125mA, 1A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency3MHz
- Collector Emitter Saturation Voltage-700mV
- Max Breakdown Voltage100V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- hFE Min15
- Height16.51mm
- Length10.67mm
- Width4.83mm
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
TIP30CTU Overview
In this device, the DC current gain is 15 @ 1A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -700mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 125mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).3MHz is present in the transition frequency.An input voltage of 100V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
TIP30CTU Features
the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 125mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 3MHz
TIP30CTU Applications
There are a lot of ON Semiconductor
TIP30CTU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 15 @ 1A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -700mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 125mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).3MHz is present in the transition frequency.An input voltage of 100V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
TIP30CTU Features
the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 125mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 3MHz
TIP30CTU Applications
There are a lot of ON Semiconductor
TIP30CTU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP30CTU More Descriptions
Transistor GP BJT PNP 100V 1A 3-Pin TO-220AB Rail - Rail/Tube
TIP30C Series 100 V 1 A PNP Flange Mount Epitaxial Silicon Transistor - TO-220-3
1.0 A, 100 V PNP Bipolar Power Transistor
Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT PNP Epitaxial Sil
TIP30C Series 100 V 1 A PNP Flange Mount Epitaxial Silicon Transistor - TO-220-3
1.0 A, 100 V PNP Bipolar Power Transistor
Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT PNP Epitaxial Sil
The three parts on the right have similar specifications to TIP30CTU.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberNumber of ElementsVoltageElement ConfigurationCurrentPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthRadiation HardeningRoHS StatusLead FreeREACH SVHCSurface MountPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountCase ConnectionVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
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TIP30CTULAST SHIPMENTS (Last Updated: 2 days ago)36 WeeksThrough HoleThrough HoleTO-220-331.214012gSILICON150°C TJTube2004e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)Other Transistors-100V2W-1A3MHzTIP301100VSingle1A2WSWITCHING3MHzPNPPNP100V1A15 @ 1A 4V300μATO-220AB700mV @ 125mA, 1A100V3MHz-700mV100V100V5V1516.51mm10.67mm4.83mmNoRoHS CompliantLead Free---------------------
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LAST SHIPMENTS (Last Updated: 2 days ago)6 WeeksThrough HoleThrough HoleTO-220-331.214gSILICON150°C TJTube2013e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)Other Transistors100V2W3A3MHzTIP311-Single-2WSWITCHING3MHzNPNNPN100V3A10 @ 3A 4V300μATO-220AB1.2V @ 375mA, 3A100V3MHz-100V100V5V106.35mm6.35mm6.35mmNoRoHS CompliantLead FreeNo SVHC-------------------
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ACTIVE (Last Updated: 3 days ago)2 Weeks-Through HoleTO-220-334.535924gSILICON-65°C~150°C TJTube2005e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors40V2W3A3MHzTIP311-Single-2WSWITCHING3MHzNPNNPN40V3A10 @ 3A 4V300μATO-220AB1.2V @ 375mA, 3A40V3MHz1.2V-40V5V2515.748mm10.2616mm4.826mmNoROHS3 CompliantLead Free-NO260403COLLECTOR--------------
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----------------------------------------------------------60V1.2V @ 375mA, 3ANPNTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole3MHz10 @ 3A, 4V300µA3A
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