ON Semiconductor TIP30CG
- Part Number:
- TIP30CG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2465523-TIP30CG
- Description:
- TRANS PNP 100V 1A TO220AB
- Datasheet:
- TIP30CG
ON Semiconductor TIP30CG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor TIP30CG.
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-100V
- Max Power Dissipation2W
- Peak Reflow Temperature (Cel)260
- Current Rating-1A
- Frequency3MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberTIP30
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product3MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 1A 4V
- Current - Collector Cutoff (Max)300μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic700mV @ 125mA, 1A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency3MHz
- Collector Emitter Saturation Voltage700mV
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- hFE Min40
- Height15.748mm
- Length10.28mm
- Width4.82mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
TIP30CG Overview
In this device, the DC current gain is 15 @ 1A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 700mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 125mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).3MHz is present in the transition frequency.Maximum collector currents can be below 1A volts.
TIP30CG Features
the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 125mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 3MHz
TIP30CG Applications
There are a lot of ON Semiconductor
TIP30CG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 15 @ 1A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 700mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 125mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).3MHz is present in the transition frequency.Maximum collector currents can be below 1A volts.
TIP30CG Features
the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 125mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 3MHz
TIP30CG Applications
There are a lot of ON Semiconductor
TIP30CG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP30CG More Descriptions
Transistor General Purpose BJT PNP 100 Volt 1 Amp 3-Pin 3 Tab TO-220 AmpB Rail
1.0 A, 100 V PNP Bipolar Power Transistor
Trans GP BJT PNP 100V 1A 2000mW Automotive 3-Pin(3 Tab) TO-220AB Tube
TIP Series 100 V 1 A PNP Complementary Silicon Plastic Power Transistor TO-220AB
Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
BIPOLAR TRANSISTOR, PNP, -100V, TO-220
100V 30W 1A 15@1A4V 3MHz 700mV@1A125mA PNP -65¡Í~ 150¡Í@(Tj) TO-220(TO-220-3) Bipolar Transistors - BJT ROHS
TRANSISTOR, PNP, -100V, 30W, TO-220; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -100V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 30W; DC Collector Current: -1A; DC Current Gain hFE: 15hFE; Transis
Bipolar Transistor, Pnp, -100V, To-220; Transistor Polarity:Pnp; Collector Emitter Voltage Max:100V; Continuous Collector Current:1A; Power Dissipation:30W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Qualification:-; Msl:- Rohs Compliant: Yes |Onsemi TIP30CG.
1.0 A, 100 V PNP Bipolar Power Transistor
Trans GP BJT PNP 100V 1A 2000mW Automotive 3-Pin(3 Tab) TO-220AB Tube
TIP Series 100 V 1 A PNP Complementary Silicon Plastic Power Transistor TO-220AB
Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
BIPOLAR TRANSISTOR, PNP, -100V, TO-220
100V 30W 1A 15@1A4V 3MHz 700mV@1A125mA PNP -65¡Í~ 150¡Í@(Tj) TO-220(TO-220-3) Bipolar Transistors - BJT ROHS
TRANSISTOR, PNP, -100V, 30W, TO-220; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -100V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 30W; DC Collector Current: -1A; DC Current Gain hFE: 15hFE; Transis
Bipolar Transistor, Pnp, -100V, To-220; Transistor Polarity:Pnp; Collector Emitter Voltage Max:100V; Continuous Collector Current:1A; Power Dissipation:30W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Qualification:-; Msl:- Rohs Compliant: Yes |Onsemi TIP30CG.
The three parts on the right have similar specifications to TIP30CG.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishTerminal PositionJESD-30 CodeQualification StatusConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
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TIP30CGACTIVE (Last Updated: 6 days ago)8 WeeksTinThrough HoleTO-220-3NO34.535924gSILICON-65°C~150°C TJTube2005e3yesActive1 (Unlimited)3EAR99Other Transistors-100V2W260-1A3MHz40TIP3031Single2WCOLLECTORSWITCHING3MHzPNPPNP100V1A15 @ 1A 4V300μATO-220AB700mV @ 125mA, 1A100V3MHz700mV100V5V4015.748mm10.28mm4.82mmNo SVHCNoROHS3 CompliantLead Free------------------------
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---Through HoleTO-220-3NO--SILICON150°C TJTube-e3yesObsolete1 (Unlimited)3----NOT APPLICABLE--NOT APPLICABLE-31---SWITCHING-NPNNPN--10 @ 3A 4V300μATO-220AB1.2V @ 375mA, 3A-3MHz---------ROHS3 Compliant-MATTE TINSINGLER-PSFM-T3COMMERCIALSINGLE2W60V3A3MHz--------------
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---------------------------------------------------------------60V1.2V @ 375mA, 3ANPNTO-220AB-2WTubeTO-220-3150°C (TJ)Through Hole-10 @ 3A, 4V300µA3A
-
ACTIVE (Last Updated: 3 days ago)2 Weeks-Through HoleTO-220-3NO34.535924gSILICON-65°C~150°C TJTube2005e3yesActive1 (Unlimited)3EAR99Other Transistors40V2W2603A3MHz40TIP3131Single2WCOLLECTORSWITCHING3MHzNPNNPN40V3A10 @ 3A 4V300μATO-220AB1.2V @ 375mA, 3A40V3MHz1.2V40V5V2515.748mm10.2616mm4.826mm-NoROHS3 CompliantLead FreeTin (Sn)----------------------
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