ON Semiconductor TIP3055G
- Part Number:
- TIP3055G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2464809-TIP3055G
- Description:
- TRANS NPN 60V 15A TO247
- Datasheet:
- TIP3055G
ON Semiconductor TIP3055G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor TIP3055G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time2 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published1993
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC60V
- Max Power Dissipation90W
- Peak Reflow Temperature (Cel)260
- Current Rating15A
- Frequency2.5MHz
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation90W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product2.5MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current15A
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 4A 4V
- Current - Collector Cutoff (Max)700μA
- Vce Saturation (Max) @ Ib, Ic3V @ 3.3A, 10A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency2.5MHz
- Collector Emitter Saturation Voltage1.1V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)7V
- hFE Min20
- Height20.3454mm
- Length15.2146mm
- Width4.9022mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
TIP3055G Overview
This device has a DC current gain of 20 @ 4A 4V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 7V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 15A.In this part, there is a transition frequency of 2.5MHz.The maximum collector current is 15A volts.
TIP3055G Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 3V @ 3.3A, 10A
the emitter base voltage is kept at 7V
the current rating of this device is 15A
a transition frequency of 2.5MHz
TIP3055G Applications
There are a lot of ON Semiconductor
TIP3055G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 20 @ 4A 4V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 7V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 15A.In this part, there is a transition frequency of 2.5MHz.The maximum collector current is 15A volts.
TIP3055G Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 3V @ 3.3A, 10A
the emitter base voltage is kept at 7V
the current rating of this device is 15A
a transition frequency of 2.5MHz
TIP3055G Applications
There are a lot of ON Semiconductor
TIP3055G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP3055G More Descriptions
15 A, 60 V NPN Bipolar Power Transistor
TIP Series NPN 90 W 60 V 1.5 A Flange Mount Power Transistor - TO-247-3
ON SEMICONDUCTOR TIP3055G BIPOLAR TRANSISTOR, NPN, -60V, TO-247
Trans GP BJT NPN 60V 15A Automotive 3-Pin(3 Tab) TO-247 Tube
Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-247, Plastic/Epoxy, 3 Pin
Transistors Bipolar- General Purpose 15A, 60V, 80W NPN
Transistor, Bipolar,Si,NPN,Power,VCEO 60VDC,IC 15A,PD 90W,SOT-93 (TO-218),hFE 5 | ON Semiconductor TIP3055G
BIPOLAR Transistor, NPN, -60V, TO-247; T; BIPOLAR Transistor, NPN, -60V, TO-247; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:2.5MHz; Power Dissipation Pd:90W; DC Collector Current:15A; DC Current Gain hFE:70; No. of Pins:3Pins
Bipolar Transistor, Npn, -60V, To-247; Transistor Polarity:Npn; Collector Emitter Voltage Max:60V; Continuous Collector Current:15A; Power Dissipation:90W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Qualification:-; Msl:- Rohs Compliant: Yes |Onsemi TIP3055G.
TIP Series NPN 90 W 60 V 1.5 A Flange Mount Power Transistor - TO-247-3
ON SEMICONDUCTOR TIP3055G BIPOLAR TRANSISTOR, NPN, -60V, TO-247
Trans GP BJT NPN 60V 15A Automotive 3-Pin(3 Tab) TO-247 Tube
Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-247, Plastic/Epoxy, 3 Pin
Transistors Bipolar- General Purpose 15A, 60V, 80W NPN
Transistor, Bipolar,Si,NPN,Power,VCEO 60VDC,IC 15A,PD 90W,SOT-93 (TO-218),hFE 5 | ON Semiconductor TIP3055G
BIPOLAR Transistor, NPN, -60V, TO-247; T; BIPOLAR Transistor, NPN, -60V, TO-247; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:2.5MHz; Power Dissipation Pd:90W; DC Collector Current:15A; DC Current Gain hFE:70; No. of Pins:3Pins
Bipolar Transistor, Npn, -60V, To-247; Transistor Polarity:Npn; Collector Emitter Voltage Max:60V; Continuous Collector Current:15A; Power Dissipation:90W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Qualification:-; Msl:- Rohs Compliant: Yes |Onsemi TIP3055G.
The three parts on the right have similar specifications to TIP3055G.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
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TIP3055GACTIVE (Last Updated: 4 days ago)2 WeeksThrough HoleTO-247-3NO34.535924gSILICON-65°C~150°C TJTube1993e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors60V90W26015A2.5MHz4031Single90WCOLLECTORSWITCHING2.5MHzNPNNPN60V15A20 @ 4A 4V700μA3V @ 3.3A, 10A60V2.5MHz1.1V100V7V2020.3454mm15.2146mm4.9022mmNo SVHCNoROHS3 CompliantLead Free---------------
-
----------------------------------------------------100V-PNPTO-218-125WBulkTO-218-3-65°C ~ 150°C (TJ)Through Hole3MHz10 @ 15A, 4V-25A
-
----------------------------------------------------100V700mV @ 125mA, 1APNPTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole3MHz15 @ 1A, 4V300µA1A
-
----------------------------------------------------60V1.2V @ 375mA, 3ANPNTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole3MHz10 @ 3A, 4V300µA3A
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