Vishay Siliconix SUP28N15-52-E3
- Part Number:
- SUP28N15-52-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2852955-SUP28N15-52-E3
- Description:
- MOSFET N-CH 150V 28A TO220AB
- Datasheet:
- SUP28N15-52-E3
Vishay Siliconix SUP28N15-52-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SUP28N15-52-E3.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2011
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Power Dissipation-Max3.75W Ta 120W Tc
- Element ConfigurationSingle
- Power Dissipation3.75W
- Turn On Delay Time15 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs52mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id4.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1725pF @ 25V
- Current - Continuous Drain (Id) @ 25°C28A Tc
- Gate Charge (Qg) (Max) @ Vgs40nC @ 10V
- Rise Time70ns
- Drain to Source Voltage (Vdss)150V
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Vgs (Max)±20V
- Fall Time (Typ)60 ns
- Turn-Off Delay Time25 ns
- Continuous Drain Current (ID)28A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage150V
- Input Capacitance1.725nF
- Drain to Source Resistance52mOhm
- Rds On Max52 mΩ
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
SUP28N15-52-E3 Overview
The maximum input capacitance of this device is 1725pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 28A.When VGS=150V, and ID flows to VDS at 150VVDS, the drain-source breakdown voltage is 150V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 25 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 52mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 15 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 150V in order to operate.Using drive voltage (6V 10V), this device helps reduce its power consumption.
SUP28N15-52-E3 Features
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 25 ns
single MOSFETs transistor is 52mOhm
a 150V drain to source voltage (Vdss)
SUP28N15-52-E3 Applications
There are a lot of Vishay Siliconix
SUP28N15-52-E3 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 1725pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 28A.When VGS=150V, and ID flows to VDS at 150VVDS, the drain-source breakdown voltage is 150V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 25 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 52mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 15 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 150V in order to operate.Using drive voltage (6V 10V), this device helps reduce its power consumption.
SUP28N15-52-E3 Features
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 25 ns
single MOSFETs transistor is 52mOhm
a 150V drain to source voltage (Vdss)
SUP28N15-52-E3 Applications
There are a lot of Vishay Siliconix
SUP28N15-52-E3 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
SUP28N15-52-E3 More Descriptions
TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,28A I(D),TO-220AB
Trans MOSFET N-CH 150V 28A 3-Pin(3 Tab) TO-220AB
N-CHANNEL 150-V (D-S) 175C DEG MOSFET
Trans MOSFET N-CH 150V 28A 3-Pin(3 Tab) TO-220AB
N-CHANNEL 150-V (D-S) 175C DEG MOSFET
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