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SUM110P06-08L-E3

Vishay Siliconix SUM110P06-08L-E3

Part Number:
SUM110P06-08L-E3
Manufacturer:
Vishay Siliconix
Ventron No:
3813673-SUM110P06-08L-E3
Description:
MOSFET P-CH 60V 110A D2PAK
ECAD Model:
Datasheet:
SUM110P06-08L-E3

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Specifications
Vishay Siliconix SUM110P06-08L-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SUM110P06-08L-E3.
  • Factory Lead Time
    14 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Supplier Device Package
    TO-263 (D2Pak)
  • Weight
    1.437803g
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2009
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    8MOhm
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    3.75W Ta 272W Tc
  • Element Configuration
    Single
  • Power Dissipation
    3.75W
  • Turn On Delay Time
    20 ns
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    8mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    9200pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    110A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    240nC @ 10V
  • Rise Time
    190ns
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    300 ns
  • Turn-Off Delay Time
    140 ns
  • Continuous Drain Current (ID)
    -110A
  • Threshold Voltage
    -1V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -60V
  • Input Capacitance
    9.2nF
  • Max Junction Temperature (Tj)
    175°C
  • Drain to Source Resistance
    6.5mOhm
  • Rds On Max
    8 mΩ
  • Height
    5.08mm
  • Length
    10.41mm
  • Width
    9.65mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SUM110P06-08L-E3 Description
SUM110P06-08L-E3 is a 60-V P-Channel MOSFET. A P-channel MOSFET uses hole flow as the charge carrier, which has less mobility than the electron flow used in N-channel MOSFETs. In functional terms, the main difference is that P-channel MOSFETs require a negative voltage from the gate to the source (VGS) to turn on (as opposed to an N-channel MOSFET, which requires a positive VGS voltage). This makes P-channel MOSFETs the ideal choice for high-side switches. The simplicity of the design is beneficial for low-voltage drive applications and non-isolated POLs, where space is limited. 

SUM110P06-08L-E3 Features
Drain-Source Voltage: -60V Gate-Source Voltage: ± 20V Continuous Drain Current TC = 25 °C: - 110A Pulsed Drain Current: - 200A Maximum Power Dissipation TC = 25 °C: 272W TrenchFET® Power MOSFET Package with Low Thermal Resistance 100 % Rg Tested

SUM110P06-08L-E3 Applications
Battery protection Revere polarity protection Linear battery chargers Load switched DC-DC converters
SUM110P06-08L-E3 More Descriptions
Single P-Channel 60 V 8 mOhm 272 W Surface Mount Power Mosfet - TO-263
Mosfet, P Channel, -60V, -110A, To-263-3, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:110A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:272W Rohs Compliant: Yes |Vishay SUM110P06-08L-E3.
Power Field-Effect Transistor, 110A I(D), 60V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, P-CH, -60V, -110A, TO-263; Transistor Polarity: P Channel; Continuous Drain Current Id: -110A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.0065ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 272W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)
Product Comparison
The three parts on the right have similar specifications to SUM110P06-08L-E3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Max Junction Temperature (Tj)
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    ECCN Code
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    Terminal Finish
    Subcategory
    Terminal Form
    Pin Count
    JESD-30 Code
    Operating Mode
    Transistor Application
    Pulsed Drain Current-Max (IDM)
    Termination
    Max Power Dissipation
    Reverse Recovery Time
    Dual Supply Voltage
    Nominal Vgs
    View Compare
  • SUM110P06-08L-E3
    SUM110P06-08L-E3
    Vishay Siliconix
    14 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    TO-263 (D2Pak)
    1.437803g
    -55°C~175°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2009
    Active
    1 (Unlimited)
    8MOhm
    175°C
    -55°C
    MOSFET (Metal Oxide)
    1
    1
    3.75W Ta 272W Tc
    Single
    3.75W
    20 ns
    P-Channel
    8mOhm @ 30A, 10V
    3V @ 250μA
    9200pF @ 25V
    110A Tc
    240nC @ 10V
    190ns
    60V
    4.5V 10V
    ±20V
    300 ns
    140 ns
    -110A
    -1V
    20V
    -60V
    9.2nF
    175°C
    6.5mOhm
    8 mΩ
    5.08mm
    10.41mm
    9.65mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SUM10250E-GE3
    SUM10250E-GE3
    Vishay Siliconix
    14 Weeks
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    ThunderFET®
    -
    Active
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    375W Tc
    -
    -
    -
    N-Channel
    31m Ω @ 30A, 10V
    4V @ 250μA
    3002pF @ 125V
    63.5A Tc
    88nC @ 10V
    -
    250V
    7.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    EAR99
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    SUM110P06-08L-E3 vs SUM10250E-GE3
  • SUM110P04-04L-E3
    SUM110P04-04L-E3
    Vishay Siliconix
    14 Weeks
    -
    Surface Mount, Through Hole
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    1.437803g
    -55°C~175°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2009
    Active
    1 (Unlimited)
    4.2MOhm
    -
    -
    MOSFET (Metal Oxide)
    1
    1
    3.75W Ta 375W Tc
    Single
    3.75W
    25 ns
    P-Channel
    4.2m Ω @ 30A, 10V
    3V @ 250μA
    11200pF @ 25V
    110A Tc
    350nC @ 10V
    30ns
    40V
    4.5V 10V
    ±20V
    110 ns
    190 ns
    110A
    -
    20V
    -40V
    -
    -
    -
    -
    4.83mm
    10.41mm
    9.65mm
    -
    No
    ROHS3 Compliant
    Lead Free
    EAR99
    -
    -
    SILICON
    e3
    yes
    2
    Matte Tin (Sn)
    Other Transistors
    GULL WING
    4
    R-PSSO-G2
    ENHANCEMENT MODE
    SWITCHING
    240A
    -
    -
    -
    -
    -
    SUM110P06-08L-E3 vs SUM110P04-04L-E3
  • SUM110N05-06L-E3
    SUM110N05-06L-E3
    Vishay Siliconix
    -
    -
    Surface Mount, Through Hole
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -
    -
    Digi-Reel®
    TrenchFET®
    2009
    Obsolete
    1 (Unlimited)
    6mOhm
    175°C
    -55°C
    MOSFET (Metal Oxide)
    1
    -
    -
    Single
    3.7W
    15 ns
    N-Channel
    6m Ω @ 30A, 10V
    3V @ 250μA
    3300pF @ 25V
    110A Tc
    100nC @ 10V
    15ns
    -
    -
    -
    15 ns
    35 ns
    110A
    -
    20V
    55V
    -
    -
    -
    -
    4.826mm
    10.414mm
    9.652mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    EAR99
    -
    -
    -
    e3
    yes
    2
    Matte Tin (Sn)
    FET General Purpose Powers
    GULL WING
    4
    R-PSSO-G2
    ENHANCEMENT MODE
    SWITCHING
    240A
    SMD/SMT
    36W
    70 ns
    55V
    3 V
    SUM110P06-08L-E3 vs SUM110N05-06L-E3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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