Vishay Siliconix SUM110N05-06L-E3

Name: SUM110N05-06L-E3
Brand: Vishay Siliconix
SKU: 2491483-SUM110N05-06L-E3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SUM110N05-06L-E3

Manufacturer:: Vishay Siliconix

Ventron No:: 2491483-SUM110N05-06L-E3

Description:: MOSFET N-CH 55V 110A D2PAK

ECAD Model:

Datasheet:: SUM110N05-06L-E3

Specifications

Vishay Siliconix SUM110N05-06L-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SUM110N05-06L-E3.

Mount
Surface Mount, Through Hole
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Packaging
Digi-Reel®
Series
TrenchFET®
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
6mOhm
Terminal Finish
Matte Tin (Sn)
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Subcategory
FET General Purpose Powers
Max Power Dissipation
36W
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Pin Count
4
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
3.7W
Turn On Delay Time
15 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
6m Ω @ 30A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3300pF @ 25V
Current - Continuous Drain (Id) @ 25°C
110A Tc
Gate Charge (Qg) (Max) @ Vgs
100nC @ 10V
Rise Time
15ns
Fall Time (Typ)
15 ns
Turn-Off Delay Time
35 ns
Reverse Recovery Time
70 ns
Continuous Drain Current (ID)
110A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
55V
Pulsed Drain Current-Max (IDM)
240A
Dual Supply Voltage
55V
Nominal Vgs
3 V
Height
4.826mm
Length
10.414mm
Width
9.652mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SUM110N05-06L-E3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3300pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 55V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 55V.As a result of its turn-off delay time, which is 35 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 240A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 15 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.

SUM110N05-06L-E3 Features
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 240A.

SUM110N05-06L-E3 Applications
There are a lot of Vishay Siliconix
SUM110N05-06L-E3 applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

SUM110N05-06L-E3 More Descriptions

N-Channel 55-V (D-S) 175 DEG.C MOSFET | Siliconix / Vishay SUM110N05-06L-E3
Trans MOSFET N-CH 55V 110A 3-Pin(2 Tab) TO-263
N-CH 55V 110A 6mOhm TO263-3 RoHSconf
French Electronic Distributor since 1988
N-Channel MOSFETs 55V 100A 158W
MOSFET, N, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 110A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation

Product Comparison

The three parts on the right have similar specifications to SUM110N05-06L-E3.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Subcategory

Max Power Dissipation

Technology

Terminal Form

Pin Count

JESD-30 Code

Number of Elements

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Reverse Recovery Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Factory Lead Time

Contact Plating

Supplier Device Package

Weight

Operating Temperature

Number of Channels

Power Dissipation-Max

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Threshold Voltage

Input Capacitance

Max Junction Temperature (Tj)

Drain to Source Resistance

Rds On Max

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Transistor Element Material

View Compare
SUM110N05-06L-E3

Vishay Siliconix

Surface Mount, Through Hole

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

Digi-Reel®

TrenchFET®

2009

e3

yes

Obsolete

1 (Unlimited)

2

SMD/SMT

EAR99

6mOhm

Matte Tin (Sn)

175°C

-55°C

FET General Purpose Powers

36W

MOSFET (Metal Oxide)

GULL WING

4

R-PSSO-G2

1

Single

ENHANCEMENT MODE

3.7W

15 ns

N-Channel

SWITCHING

6m Ω @ 30A, 10V

3V @ 250μA

3300pF @ 25V

110A Tc

100nC @ 10V

15ns

15 ns

35 ns

70 ns

110A

20V

55V

240A

55V

3 V

4.826mm

10.414mm

9.652mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SUM110P06-08L-E3

Vishay Siliconix

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

Tape & Reel (TR)

TrenchFET®

2009

-

-

Active

1 (Unlimited)

-

-

-

8MOhm

-

175°C

-55°C

-

-

MOSFET (Metal Oxide)

-

-

-

1

Single

-

3.75W

20 ns

P-Channel

-

8mOhm @ 30A, 10V

3V @ 250μA

9200pF @ 25V

110A Tc

240nC @ 10V

190ns

300 ns

140 ns

-

-110A

20V

-60V

-

-

-

5.08mm

10.41mm

9.65mm

No SVHC

No

ROHS3 Compliant

Lead Free

14 Weeks

Tin

TO-263 (D2Pak)

1.437803g

-55°C~175°C TJ

1

3.75W Ta 272W Tc

60V

4.5V 10V

±20V

-1V

9.2nF

175°C

6.5mOhm

8 mΩ

-

-

-

SUM110N05-06L-E3 vs SUM110P06-08L-E3
SUM10250E-GE3

Vishay Siliconix

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

Tape & Reel (TR)

ThunderFET®

-

-

-

Active

1 (Unlimited)

-

-

EAR99

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

N-Channel

-

31m Ω @ 30A, 10V

4V @ 250μA

3002pF @ 125V

63.5A Tc

88nC @ 10V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

14 Weeks

-

-

-

-55°C~175°C TJ

-

375W Tc

250V

7.5V 10V

±20V

-

-

-

-

-

NOT SPECIFIED

NOT SPECIFIED

-

SUM110N05-06L-E3 vs SUM10250E-GE3
SUM110P06-07L-E3

Vishay Siliconix

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

Cut Tape (CT)

TrenchFET®

-

e3

yes

Active

1 (Unlimited)

2

-

EAR99

6.9MOhm

Matte Tin (Sn)

-

-

Other Transistors

-

MOSFET (Metal Oxide)

GULL WING

4

R-PSSO-G2

1

Single

ENHANCEMENT MODE

3.75W

20 ns

P-Channel

SWITCHING

6.9m Ω @ 30A, 10V

3V @ 250μA

11400pF @ 25V

110A Tc

345nC @ 10V

160ns

240 ns

110 ns

-

-11A

20V

-60V

240A

-

-3 V

5.08mm

10.41mm

9.65mm

No SVHC

No

ROHS3 Compliant

Lead Free

14 Weeks

-

-

1.946308g

-55°C~175°C TJ

1

3.75W Ta 375W Tc

60V

4.5V 10V

±20V

-3V

-

175°C

-

-

260

30

SILICON

SUM110N05-06L-E3 vs SUM110P06-07L-E3