STMicroelectronics STW30NM50N

Name: STW30NM50N
Brand: STMicroelectronics
SKU: 2481111-STW30NM50N
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STW30NM50N

Manufacturer:: STMicroelectronics

Ventron No:: 2481111-STW30NM50N

Description:: MOSFET N-CH 500V 27A TO-247

ECAD Model:

Datasheet:: STx30NM50N

Specifications

STMicroelectronics STW30NM50N technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STW30NM50N.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
MDmesh™ II
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
115mOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STW30N
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
190W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
190W
Case Connection
ISOLATED
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
115m Ω @ 13.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2740pF @ 50V
Current - Continuous Drain (Id) @ 25°C
27A Tc
Gate Charge (Qg) (Max) @ Vgs
94nC @ 10V
Rise Time
20ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
60 ns
Turn-Off Delay Time
115 ns
Continuous Drain Current (ID)
13.5A
Threshold Voltage
3V
JEDEC-95 Code
TO-247AC
Gate to Source Voltage (Vgs)
25V
Drain Current-Max (Abs) (ID)
27A
Drain to Source Breakdown Voltage
500V
Pulsed Drain Current-Max (IDM)
108A
Avalanche Energy Rating (Eas)
900 mJ
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STW30NM50N Description
The STW30NM50N is made with MDmeshTM Technology's second generation. This ground-breaking Power MOSFET combines a new vertical structure with the Company's strip layout to produce one of the lowest on-resistance and gate charges in the world. As a result, it is appropriate for the most demanding high-efficiency converters.

STW30NM50N Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance

STW30NM50N Applications
General-purpose amplifier
Switching applications
Power management
Industrial

STW30NM50N More Descriptions

N-channel 500 V, 0.090 Ohm, 27 A MDmesh" II Power MOSFET
Power Field-Effect Transistor, 27A I(D), 500V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N CH, 500V, 27A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.5A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.09ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 190W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Id Max: 27A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 500V; Voltage Vgs Max: 25V; Voltage Vgs Rds on Measurement: 10V

Product Comparison

The three parts on the right have similar specifications to STW30NM50N.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

REACH SVHC

RoHS Status

Lead Free

Lifecycle Status

Factory Lead Time

Drain to Source Voltage (Vdss)

Turn On Delay Time

Height

Length

Width

Radiation Hardening

Voltage - Rated DC

Current Rating

JESD-30 Code

Voltage

Current

Drain-source On Resistance-Max

View Compare
STW30NM50N

STMicroelectronics

Through Hole

Through Hole

TO-247-3

3

SILICON

150°C TJ

Tube

MDmesh™ II

e3

Obsolete

1 (Unlimited)

3

EAR99

115mOhm

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

NOT SPECIFIED

not_compliant

NOT SPECIFIED

STW30N

3

Not Qualified

1

190W Tc

Single

ENHANCEMENT MODE

190W

ISOLATED

N-Channel

SWITCHING

115m Ω @ 13.5A, 10V

4V @ 250μA

2740pF @ 50V

27A Tc

94nC @ 10V

20ns

10V

±25V

60 ns

115 ns

13.5A

3V

TO-247AC

25V

27A

500V

108A

900 mJ

No SVHC

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STW37N60DM2AG

STMicroelectronics

Through Hole

Through Hole

TO-247-3

-

-

-55°C~150°C TJ

Tube

Automotive, AEC-Q101, MDmesh™ DM2

-

Active

1 (Unlimited)

-

EAR99

-

-

-

MOSFET (Metal Oxide)

NOT SPECIFIED

-

NOT SPECIFIED

STW37N

-

-

-

210W Tc

-

-

-

-

N-Channel

-

110m Ω @ 14A, 10V

5V @ 250μA

2400pF @ 100V

28A Tc

54nC @ 10V

-

10V

±25V

-

-

28A

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

ACTIVE (Last Updated: 8 months ago)

17 Weeks

600V

-

-

-

-

-

-

-

-

-

-

-

STW30NM50N vs STW37N60DM2AG
STW34N65M5

STMicroelectronics

Through Hole

Through Hole

TO-247-3

3

SILICON

150°C TJ

Tube

MDmesh™ V

-

Active

1 (Unlimited)

3

EAR99

110mOhm

-

-

MOSFET (Metal Oxide)

-

-

-

STW34N

-

-

1

190W Tc

Single

ENHANCEMENT MODE

190W

-

N-Channel

SWITCHING

110m Ω @ 14A, 10V

5V @ 250μA

2700pF @ 100V

28A Tc

62.5nC @ 10V

-

10V

±25V

-

59 ns

28A

-

-

25V

-

650V

-

-

-

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 8 months ago)

17 Weeks

-

59 ns

20.15mm

15.75mm

5.15mm

No

-

-

-

-

-

-

STW30NM50N vs STW34N65M5
STW30NM60D

STMicroelectronics

Through Hole

Through Hole

TO-247-3

-

SILICON

-55°C~150°C TJ

Tube

MDmesh™

e3

Obsolete

1 (Unlimited)

3

EAR99

-

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

NOT SPECIFIED

not_compliant

NOT SPECIFIED

STW30N

3

Not Qualified

1

312W Tc

Single

ENHANCEMENT MODE

312W

-

N-Channel

SWITCHING

145m Ω @ 15A, 10V

5V @ 250μA

2520pF @ 25V

30A Tc

115nC @ 10V

33ns

10V

±30V

35 ns

75 ns

30A

-

TO-247AC

30V

-

600V

-

740 mJ

-

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

600V

30A

R-PSFM-T3

600V

34A

0.145Ohm

STW30NM50N vs STW30NM60D