STMicroelectronics STU85N3LH5
- Part Number:
- STU85N3LH5
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2482983-STU85N3LH5
- Description:
- MOSFET N-CH 30V 80A IPAK
- Datasheet:
- STU85N3LH5
STMicroelectronics STU85N3LH5 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STU85N3LH5.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature175°C TJ
- PackagingTube
- SeriesSTripFET™ V
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - annealed
- Additional FeatureULTRA-LOW RESISTANCE
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Base Part NumberSTU85
- Pin Count3
- Number of Elements1
- Power Dissipation-Max70W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation70W
- Case ConnectionDRAIN
- Turn On Delay Time6 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs5.4m Ω @ 40A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1850pF @ 25V
- Current - Continuous Drain (Id) @ 25°C80A Tc
- Gate Charge (Qg) (Max) @ Vgs14nC @ 5V
- Rise Time14ns
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±22V
- Fall Time (Typ)10.8 ns
- Turn-Off Delay Time23.6 ns
- Continuous Drain Current (ID)40A
- Threshold Voltage2.5V
- Gate to Source Voltage (Vgs)22V
- Drain Current-Max (Abs) (ID)80A
- Drain to Source Breakdown Voltage30V
- Height6.9mm
- Length6.6mm
- Width2.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
STU85N3LH5 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1850pF @ 25V.This device conducts a continuous drain current (ID) of 40A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 80A.When the device is turned off, a turn-off delay time of 23.6 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 6 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 22V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2.5V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).
STU85N3LH5 Features
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 23.6 ns
a threshold voltage of 2.5V
STU85N3LH5 Applications
There are a lot of STMicroelectronics
STU85N3LH5 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1850pF @ 25V.This device conducts a continuous drain current (ID) of 40A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 80A.When the device is turned off, a turn-off delay time of 23.6 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 6 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 22V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2.5V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).
STU85N3LH5 Features
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 23.6 ns
a threshold voltage of 2.5V
STU85N3LH5 Applications
There are a lot of STMicroelectronics
STU85N3LH5 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
STU85N3LH5 More Descriptions
N-Channel 30 V 5.4 mOhm Through Hole StripFET V Power Mosfet - IPAK
N-channel 30 V, 0.0042 Ohm , 80 A, DPAK, TO-220, IPAK
Power Field-Effect Transistor, 80A I(D), 30V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
Mosfet, N Channel, 30V, 80A, Ipak; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; Msl:- Rohs Compliant: Yes |Stmicroelectronics STU85N3LH5
N-channel 30 V, 0.0042 Ohm , 80 A, DPAK, TO-220, IPAK
Power Field-Effect Transistor, 80A I(D), 30V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
Mosfet, N Channel, 30V, 80A, Ipak; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; Msl:- Rohs Compliant: Yes |Stmicroelectronics STU85N3LH5
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