STU85N3LH5

STMicroelectronics STU85N3LH5

Part Number:
STU85N3LH5
Manufacturer:
STMicroelectronics
Ventron No:
2482983-STU85N3LH5
Description:
MOSFET N-CH 30V 80A IPAK
ECAD Model:
Datasheet:
STU85N3LH5

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Specifications
STMicroelectronics STU85N3LH5 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STU85N3LH5.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    175°C TJ
  • Packaging
    Tube
  • Series
    STripFET™ V
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - annealed
  • Additional Feature
    ULTRA-LOW RESISTANCE
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Base Part Number
    STU85
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    70W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    70W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    6 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    5.4m Ω @ 40A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1850pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    80A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    14nC @ 5V
  • Rise Time
    14ns
  • Drive Voltage (Max Rds On,Min Rds On)
    5V 10V
  • Vgs (Max)
    ±22V
  • Fall Time (Typ)
    10.8 ns
  • Turn-Off Delay Time
    23.6 ns
  • Continuous Drain Current (ID)
    40A
  • Threshold Voltage
    2.5V
  • Gate to Source Voltage (Vgs)
    22V
  • Drain Current-Max (Abs) (ID)
    80A
  • Drain to Source Breakdown Voltage
    30V
  • Height
    6.9mm
  • Length
    6.6mm
  • Width
    2.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
STU85N3LH5 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1850pF @ 25V.This device conducts a continuous drain current (ID) of 40A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 80A.When the device is turned off, a turn-off delay time of 23.6 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 6 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 22V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2.5V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).

STU85N3LH5 Features
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 23.6 ns
a threshold voltage of 2.5V


STU85N3LH5 Applications
There are a lot of STMicroelectronics
STU85N3LH5 applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
STU85N3LH5 More Descriptions
N-Channel 30 V 5.4 mOhm Through Hole StripFET V Power Mosfet - IPAK
N-channel 30 V, 0.0042 Ohm , 80 A, DPAK, TO-220, IPAK
Power Field-Effect Transistor, 80A I(D), 30V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
Mosfet, N Channel, 30V, 80A, Ipak; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; Msl:- Rohs Compliant: Yes |Stmicroelectronics STU85N3LH5
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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