STMicroelectronics STU10NM60N

STU10NM60N Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 200 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 540pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 10A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 8A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 32 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 25V to 1.In this case, the threshold voltage of the transistor is 3V, which means that it will not activate any of its functions when its threshold voltage reaches 3V.Normal operation requires that the DS breakdown voltage remain above 600V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

STU10NM60N Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 10A
the turn-off delay time is 32 ns
a threshold voltage of 3V
a 600V drain to source voltage (Vdss)


STU10NM60N Applications
There are a lot of STMicroelectronics
STU10NM60N applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies